Abstract:In order to optimize the control parameters of CdZnTe single crystal growth with vertical Bridgman method, the influences were investigated of the enhancement of heat exchange, such as increasing the axial outward heat flux of the crucible bottom, the radial outward heat flux of the crucible wall, the carbon film thickness on the crucible inner wall, et al, on CdZnTe crystal growth process. When the axial outward heat flux of the crucible bottom is magnified ten times, the melt convection near the solid-liquid interface gets enhanced in a great deal, the interface concavity reduces extraordinarily at the beginning of the solidification process, but increases a lot later. The radial solute segregation decreases evidently in the initial part of the crystal (about one fourth of the whole ingot) , and the length of the axial iso-concentration zone increases a little. When the axial outward heat flux of the crucible bottom is magnified fifty times, negative radial segregation and positive axial segregation come into being in the initial part of the crystal. When the radial outward heat flux of the crucible wall is magnified, both the melt convection and the interface concavity reduce at the beginning of the solidification process, but increases a lot later. The increase of the carbon film thickness results in a notable reduction of the melt convection, and a great increase of the interface concavity. Nevertheless , both of them, the increases of the radial outward heat flux and the carbon film thickness, could hardly affect the solute segregation of the crystal.

A Modified Vertical Bridgman Method for Growth of High-Quality Cd1−xZnxTe Crystals

A modified vertical Bridgman method for growth of high-quality Cd<sub>1−x</sub>Zn<sub>x</sub>Te crystals

Numerical analysis of Cd1−xZnxTe crystal growth by the vertical Bridgman method using the accelerated crucible rotation technique

Influence of Enhancement of Heat Exchange on CdZnTe Crystal Growth Process

Characterization of Cdznte Crystal Grown by Bottom-Seeded Bridgman and Bridgman Accelerated Crucible Rotation Techniques

Vertical Bridgman seeded growth of Cd1-xZnxTe crystals

Characterization of CdZnTe Crystals Grown Using a Seeded Modified Vertical Bridgman Method

Modified Growth of Cd1−xZnxTe Single Crystals

Growth of High Resistivity CdZnTe Crystals by Modified Bridgman Method

Growth of Cd1−xZnxTe Crystals with Different X Values and Their Qualities Comparison

Numerical Modeling of CdZnTe-VBM Crystal Growth

Growth of ZnTe single crystals from Te solution by vertical Bridgman method with ACRT

Modification of Growth Interface of CdZnTe Crystals in THM Process by ACRT

Growth of Large-size CdZnTe Single Crystal Using Seeded Vertical Bridgman Method

Cd1−xZnxTe: Growth and Characterization of Crystals for X-ray and Gamma-Ray Detectors

Effects of Crystal Growth Methods on Deep-Level Defectsand Electrical Properties of CdZnTe:In Crystals

Crystal growth and characterization of Cd0.8Mn0.2Te using Vertical Bridgman method

Correlation Between the X Value and Qualities of Cd1−xZnxTe Crystal Grown by Vertical Bridgman Method

Study on the Composition Deviations in CZT Crystal Grown by MVB Method

Growth and Properties of High Resistivity Cd0.8Zn0.2Te Single Crystals

Growth of Single-Crystal Cd0.9Zn0.1Te Ingots Using Pressure Controlled Bridgman Method