Abstract:Thin film transistors based on a‐IGZO/a‐ITZO/a‐IGZO heterostructural channel are fabricated. The TFTs exhibited outstanding electrical performances, with field effect mobility exceeding 50 cm2V‐1s‐1, ideally small positive/negative‐bias‐stress voltage shifts down to 0.1/0.004 V, and optimized sub‐threshold swing as low as 80 mV dec−1. Improvements in the quality of transport interface verified by magnetotransport and Hall effect account for enhanced transport performances and device reliabilities. Thin film transistors (TFTs) based on amorphous oxide semiconductors (AOS) are promising candidates for panel displays. However, the trade‐off between mobility and reliability in AOS‐TFTs hinders their further applications in next‐generation display techniques and newly developed logic and memory circuits. Here, a structural strategy is proposed for the mobility‐reliability trade‐off, via a triple‐layer channel containing a Ga‐free high‐mobility layer (amorphous InSnZnO, a‐ITZO) sandwiched by two Ga‐rich layers (amorphous InGaZnO, a‐IGZO) with higher reliability. Gate‐induced carrier accumulation is verified mainly being energetically confined within the high mobility a‐ITZO layer, at the newly defined a‐ITZO/a‐IGZO interface. Compared to single layer a‐ITZO‐TFTs, triple‐channel a‐IGZO/a‐ITZO/a‐IGZO TFTs (GTG‐TFTs) exhibit outstanding stability and electrical transport performances, with suppressed positive/negative‐bias‐stress voltage shifts from 1/0.3 to 0.1/0.004 V, enhanced field effect mobility from ≈40 to 56 cm2V−1s−1, and optimized sub‐threshold swing down to 80 mV dec−1. Further numerical simulations and charge transport characterizations, including magnetotransport and gate‐induced Hall effect, indicate that charge transport in tri‐layer structure is less affected by energetic disorders present at gate insulator interfaces.

P‐5: Improved Split C–V Technique for Effective Mobility Extraction in Self‐Aligned Top‐Gate Amorphous InGaZnO TFTs with Short Channel

Mobility Enhancement In Amorphous In-Ga-Zn-O Thin-Film Transistor By Induced Metallic In Nanoparticles And Cu Electrodes

P‐1.11: Relationship Between Effective Mobility and Source/Drain Resistance in Self‐Aligned Top‐Gate A‐igzo Thin Film Transistors

P‐1.5: Fabrication of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors with Submicron Channel Length

Mobility Enhancement of BCE-Type Amorphous InGaZnO TFTs Using Triple-Layer Channels

Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Optimizing Length Scalability of InGaZnO Thin‐Film Transistors through Lateral Carrier Profile Engineering and Negative ΔL Extension Structure

Mobility Extraction for Nanotube TFTs

A New Mobility Extraction Technique Based on Simultaneous Ultrafast $i_{d}$ – $v_{g}$ and $c_{\rm Cg}$ – $v_{g}$ Measurements in MOSFETs

Effect of Al2O3 Passivation Layer and Cu Electrodes on High Mobility of Amorphous IZO TFT

Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down Via-Contact Type Amorphous InGaZnO Thin-Film Transistors

Enhancing IGZO Thin Film Transistor Scalability Through Tunneling Contact

40‐4: Invited Paper: Self‐Aligned Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Hafnium‐Induced Source/Drain Regions

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

Sub-100 Nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Gate Insulator of 4 Nm Atomic-Layer-Deposited AlOx

Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain

Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region

Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel