Abstract:An active-passivation p-GaN gate HEMT (AP-HEMT), featuring an active p-GaN passivation layer extending into the drain-side access region, is demonstrated on a commercial E-mode p-GaN/AlGaN/GaN heterostructure wafer. The active passivation layer (APL) is electrically connected to the p-GaN gate, and thus can supply/release mobile holes through gate electrode. The mobile holes in the APL effectively shields the overlaying surface traps from depleting the underlying 2DEG channel, and thus results in a much improved dynamic <inline-formula> <tex-math notation="LaTeX">${R}_{\text {on}}$ </tex-math></inline-formula>. After a 10-ms 650-V <inline-formula> <tex-math notation="LaTeX">${V}_{\text {DS}}$ </tex-math></inline-formula> stress, the measured dynamic <inline-formula> <tex-math notation="LaTeX">${R}_{\text {on}}$ </tex-math></inline-formula>/static <inline-formula> <tex-math notation="LaTeX">${R}_{\text {on}}$ </tex-math></inline-formula> is 4.30 for Conv-HEMT, but only 1.39 for AP-HEMT. Specially designed HEMTs with a surface testing electrode (ST) in the access region are fabricated to verify the screening effect. A negative <inline-formula> <tex-math notation="LaTeX">${V}_{\text {ST}}$ </tex-math></inline-formula> mimics the virtual gate effect caused by negative surface charges, resulting in a reduced drain current in conventional HEMT (Conv-HEMT). In the AP-HEMT, a negative <inline-formula> <tex-math notation="LaTeX">${V}_{\text {ST}}$ </tex-math></inline-formula> is shown to induce no change in the drain current, indicating an effective screening of the trap states. On the other hand, under a positive <inline-formula> <tex-math notation="LaTeX">${V}_{\text {ST}}$ </tex-math></inline-formula> stress applied to a Conv-HEMT, electrons in the 2DEG channel are pulled over the AlGaN barrier and get trapped at the surface, resulting in a sharply decreased drain current after positive <inline-formula> <tex-math notation="LaTeX">${V}_{\text {ST}}$ </tex-math></inline-formula> is removed. For the AP-HEMT, the drain current remain unchanged after the positive <inline-formula> <tex-math notation="LaTeX">${V}_{\text {ST}}$ </tex-math></inline-formula> is removed. The actively passivated HEMT exhibits the highly desired suppression of surface trap induced dynamic <inline-formula> <tex-math notation="LaTeX">${R}_{\text {on}}$ </tex-math></inline-formula> degradation.

Analyzing the Electrical Characteristics of P-gate Enhanced HEMT with C-doped Buffer Layer through Silvaco

Simulation Analysis of Electrical Characteristics of P-gate Enhanced HEMT with C-doped Buffer Layer

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

Analysis and simulation of bulk polarization mechanism in p-GaN HEMT with AI component gradient buffer layer

An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Exploitation of Hole Injection and Spreading for Dynamic Enhancement in P-Gan Gate HEMT under Room/High Temperatures

Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates

High Dynamic Stability in Enhancement-Mode Active-Passivation P-Gan Gate HEMT

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT

Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation P-Gan Gate HEMT Via Light/Hole Pumping

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Abnormal On Current Tendency in Saturation Region between High and Light Carbon Doped buffer layer in p-GaN HEMT

Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate Swing and Effective Hole Injection

Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

600-V P-Gan Gate HEMT with Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects

An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps

A Π-shaped p-GaN HEMT for reliable enhancement mode operation