Abstract:An active-passivation p-GaN gate HEMT (AP-HEMT), featuring an active p-GaN passivation layer extending into the drain-side access region, is demonstrated on a commercial E-mode p-GaN/AlGaN/GaN heterostructure wafer. The active passivation layer (APL) is electrically connected to the p-GaN gate, and thus can supply/release mobile holes through gate electrode. The mobile holes in the APL effectively shields the overlaying surface traps from depleting the underlying 2DEG channel, and thus results in a much improved dynamic <inline-formula> <tex-math notation="LaTeX">${R}_{\text {on}}$ </tex-math></inline-formula>. After a 10-ms 650-V <inline-formula> <tex-math notation="LaTeX">${V}_{\text {DS}}$ </tex-math></inline-formula> stress, the measured dynamic <inline-formula> <tex-math notation="LaTeX">${R}_{\text {on}}$ </tex-math></inline-formula>/static <inline-formula> <tex-math notation="LaTeX">${R}_{\text {on}}$ </tex-math></inline-formula> is 4.30 for Conv-HEMT, but only 1.39 for AP-HEMT. Specially designed HEMTs with a surface testing electrode (ST) in the access region are fabricated to verify the screening effect. A negative <inline-formula> <tex-math notation="LaTeX">${V}_{\text {ST}}$ </tex-math></inline-formula> mimics the virtual gate effect caused by negative surface charges, resulting in a reduced drain current in conventional HEMT (Conv-HEMT). In the AP-HEMT, a negative <inline-formula> <tex-math notation="LaTeX">${V}_{\text {ST}}$ </tex-math></inline-formula> is shown to induce no change in the drain current, indicating an effective screening of the trap states. On the other hand, under a positive <inline-formula> <tex-math notation="LaTeX">${V}_{\text {ST}}$ </tex-math></inline-formula> stress applied to a Conv-HEMT, electrons in the 2DEG channel are pulled over the AlGaN barrier and get trapped at the surface, resulting in a sharply decreased drain current after positive <inline-formula> <tex-math notation="LaTeX">${V}_{\text {ST}}$ </tex-math></inline-formula> is removed. For the AP-HEMT, the drain current remain unchanged after the positive <inline-formula> <tex-math notation="LaTeX">${V}_{\text {ST}}$ </tex-math></inline-formula> is removed. The actively passivated HEMT exhibits the highly desired suppression of surface trap induced dynamic <inline-formula> <tex-math notation="LaTeX">${R}_{\text {on}}$ </tex-math></inline-formula> degradation.

Simulation Analysis of Electrical Characteristics of P-gate Enhanced HEMT with C-doped Buffer Layer

Analyzing the Electrical Characteristics of P-gate Enhanced HEMT with C-doped Buffer Layer through Silvaco

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Analysis and simulation of bulk polarization mechanism in p-GaN HEMT with AI component gradient buffer layer

Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer

An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications

High Dynamic Stability in Enhancement-Mode Active-Passivation P-Gan Gate HEMT

Exploitation of Hole Injection and Spreading for Dynamic Enhancement in P-Gan Gate HEMT under Room/High Temperatures

Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate Swing and Effective Hole Injection

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Abnormal On Current Tendency in Saturation Region between High and Light Carbon Doped buffer layer in p-GaN HEMT

An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps

Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation P-Gan Gate HEMT Via Light/Hole Pumping

Optimizing Breakdown Voltage and On-State Resistance by Modulating the Barrier Height along 2DEG Channel for Power P-Gan HEMTs