Abstract:Reliable control in the crystal quality of synthesized III-V nanowires (NWs) is particularly important to manipulate their corresponding electronic transport properties for technological applications. In this report, a "two-step" growth process is adopted to achieve single-crystalline GaAs NWs, where an initial high-temperature nucleation process is employed to ensure the formation of high Ga supersaturated Au7Ga3 and Au2Ga alloy seeds, instead of the low Ga supersaturated Au7Ga2 seeds observed in the conventional "single-step" growth. These two-step NWs are long (>60 μm) and thick (>80 nm) with the minimal defect concentrations and uniform growth orientations. Importantly, these NWs exhibit p-type conductivity as compared to the single-step grown n-type NWs for the same diameter range. This NW conductivity difference (p- versus n-channel) is shown to originate from the donor-like crystal defects, such as As precipitates, induced by the low Ga supersaturated multicrystalline Au7Ga2 alloy seeds. Then the well-controlled crystal quality for desired electronic properties is further explored in the application of large-scale p-type GaAs NW parallel array FETs as well as the integration of both p- and n-type GaAs NWs into CMOS inverters. All these illustrate the successful control of NW crystal defects and corresponding electronic transport properties via the manipulation of Ga supersaturation in the catalytic alloy tips with different preparation methods. The understanding of this relationship between NW crystal quality and electronic transport properties is critical and preferential to the future development of nanoelectronic materials, circuit design, and fabrication.

Nanowires: Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (adv. Mater. 16/2020)

Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices

Ge/Si Quantum Wires for Quantum Computing

Controlled synthesis of millimeter-long silicon nanowires with uniform electronic properties.

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Monolithic growth of ultra-thin Ge nanowires on Si(001)

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier

Control of Ge island coalescence for the formation of nanowires on silicon.

Wafer-scale high-throughput ordered arrays of Si and Coaxial Si/Si 1- xGex wires: Fabrication, characterization, and photovoltaic application

Silicon Nanowires, Catalytic Growth and Electrical Characterization

Wafer-level Site-Controlled Growth of Silicon Nanowires by Cu Pattern Dewetting

Strong and tunable spin--orbit coupling of one-dimensional holes in Ge/Si core/shell nanowires.

Realization of Silicon Quantum Wires Based on Si/SiGe/Si Heterostructure

Controlled Self-Assembly of Nanoscale Superstructures in Phase-Change Ge-Sb-Te Nanowires

Controllable P-N Switching Behaviors of Gaas Nanowires Via an Interface Effect

Controllable Fabrication of GeSi Nanowires in Diameter of about 10 Nm Using the Top-Down Approach

Ge Nanowire Transistors with High-Quality Interfaces by Atomic-Scale Thermal Annealing

GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties.

Synthesis and Electrical and Mechanical Properties of Silicon and Germanium Nanowires

A Single-Electron Transistor and an Even-Odd Effect in Chemically Synthesized Ge Nanowires