Abstract:An efficient and accurate knowledge-guided neural network (KGNN) modeling method for microwave active devices is proposed. The KGNN-based modeling method specifically constructs a hybrid combined objective function (COF) to constrain and guide neural network modeling, greatly improving modeling accuracy and consistency. In particular, the COF consists of the training error term, the prior knowledge term, and the regularization term. The proposed method can be directly used for large-signal modeling. To improve the modeling accuracy, the proposed method is used to model both the bias-and temperature-dependent isothermal nonlinear current and thermal factor, which is introduced to characterize the influence of the self-heating effect. The depletion capacitance and delay time parameters are also modeled with the proposed method. The base–collector and base–emitter charge formulations are obtained by integrating the corresponding depletion capacitances and delay times. An improved small-signal extraction method for III–V heterojunction bipolar transistors (HBTs) is used to obtain the extrinsic parameters. The developed large-signal model (LSM) is implemented in the advanced design system and fully verified by the small-and large-signal measurements. Good agreement is obtained between measured and simulated results.

An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT

An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network

An Augmented Small-Signal Model of InP HBT with Its Analytical-Based Parameter Extraction Technique

An Aging Small-signal Modeling Method of Microwave Transistors Using GA-ELM Neural Network

A distributed small signal equivalent circuit modeling method for InP HEMT

Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation

A Compact Macromodeling Method for Characterizing Large-signal DC and AC Performance of InP and GaAs HBTs

A large-signal model for GaInP/GaAs heterojunction bipolar transistors

A Simplification Method for Power Device Thermal Modeling with Quantitative Error Analysis

Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs

A parameter extraction method for InP HBT small‐signal model considering emitter–collector laminated capacitance effect

Gamma-Induced Degradation Effect of InP HBTs Studied by Keysight Model

Aging Mathematical Model of InGaN/GaN LEDs Based on Non-Radiative Recombination

An improved model for InP/InGaAs double heterojunction bipolar transistors

A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT

Advanced Compact Modeling for Transistor Aging: Trap-based Approaches and Mixed-mode Coupling

A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device

Investigation of the Off-State Degradation in Advanced FinFET Technology—Part II: Compact Aging Model and Impact on Circuits

A Verilog-A Large Signal Model for InP DHBT Including Thermal Effects

Bias Temperature Instability Model Using Dynamic Defect Potential for Predicting CMOS Aging

A Knowledge-Guided Neural Network-Based Large-Signal Model for InP HBTs with Self-Heating Effect Consideration