Abstract:In this work, the reliability of BTI in top‐gate CNT FETs under a wide range of temperatures is investigated firstly. The CNT devices not only exhibit a high on/off current ratio (Ion/Ioff, ≈105) and a low subthreshold swing (SS) ranging from 200 to 400 K, but also the threshold voltage (Vth) shifts caused by BTI become 2–3 times smaller than previous works. In addition, by optimizing the device fabrication process, the CNT FET presents the Normalized BTI shift down to ≈0.10 V/(MV cm−1), which is by far the most reliable top‐gate nanodevices. Carbon nanotube (CNT) is widely regarded as a promising candidate for constructing sub‐10 nm field‐effect transistors (FETs). However, limited attention is carried out on the reliability of CNT FETs, which is critical for practical application. In this work, the bias temperature instability (BTI) effect in top‐gate CNT FETs is thoroughly investigated under a wide range of environment temperatures from 200 to 400 K for the first time. Notably, the threshold voltage (Vth) shifts induced by BTI are measured down to 0.38 V, which is ≈2–3 times smaller than those reported in previous studies. In addition, by optimizing the device fabrication process, the reliability of the BTI effects in CNT FETs can be further improved. The optimized CNT FET exhibits a Normalized BTI shift down to ≈0.10 V/(MV cm−1), which represents the most reliable top‐gate nano‐devices to date.

Negative Bias Temperature Instability in Top-Gated Carbon Nanotube Thin Film Transistors with Y2O3 Gate Dielectric

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Physical Understanding of Negative Bias Temperature Instability below Room Temperature

Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire Mosfets: Characteristic Modeling and the Impact on Circuit Aging

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI Pmosfets with Al2O3/GeOx Gate Stacks

CMOS NBTI Degradation and Recovery Behaviors in a Wide Temperature Range

Positive Bias Temperature Instabilities in Vertical Gate-all-around Poly-Si Nanowire Field-effect Transistors

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

Pulse Stress Frequency Dependence Of Negative Bias Temperature Instability In Sion Gate Transistors

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN P-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

HCI and NBTI Induced Degradation in Gate-All-around Silicon Nanowire Transistors

Impacts Of Non-Negligible Electron Trapping/Detrapping On The Nbti Characteristics In Silicon Nanowire Transistors With Tin Metal Gates

Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability

Overcoming Ambient Drift and Negative-Bias Temperature Instability in Foundry Carbon Nanotube Transistors

On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress