Growth Mechanism and Synthesizing Methods of Preferential Orientation of AlN Thin Films

Huining Xiao

2005-01-01

Abstract:AlN thin films with different preferential orientations have dissimilar physical and chemical properties and the underlying mechanisms that determine the preferential orientations of AlN thin films contain minimization of thermodynamics and evolutionary selection of kinetics.AlN thin films with different preferential orientations can be fabricated by optimizing deposition conditions among many synthesizing methods.The effects of factors on the preferential orientation may be contributed to the energy differences of the depositing particles before their reaching the substrate,which induces the competition of growth rate between different planes.The investigative results indicate that the preferential orientation plane is a plane with the highest growth rate at the deposition conditions.And among all the control factors,the target-to-substrate distance and ion beam bombardment are the most important factors of controlling preferential orientation of AlN thin films.It is also found that a longer target-to-substrate distance is conductive to the(100) plane preferential orientation and a higher ion beam energy and angle are beneficial to the(002) plane preferential orientation in some extent.