Abstract:The Pb0.4Sr0.6TiO3 (PST) thin films with the perovskite phase were fabricated successfully on ITO/glass substrates by the sol-gel method with rapid thermal processing (RTP) above 500degreesC. The crystalline phase structures and the surface morphologies of the thin films were measured through XRD, SEM and AFM respectively. Results show that both the formation of the perovskite and contents of the crystalline phase in this PST thin film are dependent on the preparing process and the activity of ions in the formation of the crystalline phase. By RTP, high active ions obtained in the gel decomposition directly form the crystalline phase, and consequently, much more contents of the crystalline phase can be obtained even at a relatively lower temperature. 14% more contents of crystalline phase appear in RST thin film at 600degreesC by RTP than by heat treatment at 600degreesC for a long time. The lowest temperature of forming of the proveskite phase in sol-gel derived PST thin film is approximately 500degreesC by RTP, which is 50degreesC lower than that by heat treatment for a long time. The surface morphology of the thin film is related to the heat treatment processing. By RTP the surface morphology of the thin film keeps the original state, where the actual smooth exhibits the noncrystalline thin film and the hill-like protuberance shows the well crystalline one. Due to etching under the oxygen atmosphere at high temperature, the thin film calcined for a long time contributes the morphology with uniformly dispersed micro conical cylinders all over the surface on the basis of the original smooth or hill-like surface state.

Influences of Heat Treatment on the Structure of PMNT Thin Films Derived by Sol-Gel Process

Texture control of sol-gel derived Pb(Mg1/3Nb2/3 O3-PbTiO3 thin films using seeding layer

Effects of annealing temperature on structure and electrical properties of sol–gel derived 0.65PMN-0.35PT thin film

Texture Control of Sol-Gel Derived Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-PbTiO<sub>3</sub>Thin Films Using Seeding Layer

Influence of the annealing temperature of the Bi4Ti3O12 seeding layer on the structural and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films

Influence of preparation technique on the microscopic structure and surface morphology of nanometer TiO2 thin films

Investigation of microstructure evolution in Pt-doped TiO2 thin films deposited by rf magnetron sputtering

Effects of annealing technique and TiO2 seed layer on the phase composition of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 film

Effects of Heat-Treatment Temperature on Preparation of the Sol-Gel-Derived Ag/TiO2 Films

Properties of (001)-textured Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 thin films

Properties of (001)-textured Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>–PbTiO<sub>3</sub> thin films

Effect of Heat Treatment Temperature on the Formation of Ag Nanoparticles in Ag-Pbtio3 Composite Thin Films

Highly (111)-oriented and pyrochlore-free PMN–PT thin films derived from a modified sol–gel process

Effects of heat treatment on the formation of sol-gel derived Pb0.4Sr0.6TiO3 thin films

Film Thickness Dependence of Structural and Dielectric Properties of Pb(Mg1/3Nb2/3)O3/BaTiO3/Pt/Ti/SiO2/Si

Influence of Titanium Content and Temperature on Optical and Mechanical Properties of Sol Gel Derived TiO2/ -Glycidoxypropyltrimethoxysilane and Methyltrimethoxysilane Hybrid Organic Inorganic Films

Preparation and structure of preferentially oriented PbTiO3 glass-ceramic thin films by sol-gel process

Influence of the annealing temperature of the Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> seeding layer on the structural and electrical properties of Bi<sub>3.15</sub>Nd<sub>0.85</sub>Ti<sub>2.99</sub>Mn<sub>0.01</sub>O<sub>12</sub> thin films

Highly-Oriented Pnzt Ferroelectric Thin Films on Pt/Ti/Sio2/Si Substrate

Influence of TiO 2 Seeding Layers on Phase Composition of Lead Magnesium Niobate-Lead Titanate Thin Films Prepared by RF Magnetron Sputtering

Effects of heat treatment and heat cycle on transformation temperature and structure of Ni-49.12% Ti sputter-depositing film