2 × 2 Silicon Photonic MEMS Switch Based on Split Waveguide Crossing

Yinpeng Hu,Yi Sun,Ye Lu,Huan Li,Daoxin Dai

DOI: https://doi.org/10.1109/OECC56963.2023.10209619

2023-01-01

Abstract:We have proposed and implemented a novel 2 × 2 silicon photonic MEMS switch based on a split waveguide crossing, exhibiting experimentally low excess loss of 0.32 dB and high extinction ratio of 51 dB at 1550 nm.

What problem does this paper attempt to address?

Silicon photonic MEMS switches based on split waveguide crossings

Yinpeng Hu,Yi Sun,Ye Lu,Huan Li,Liu Liu,Yaocheng Shi,Daoxin Dai

2023-06-05

Abstract:The continuous push for high-performance photonic switches is one of the most crucial premises for the sustainable scaling of programmable and reconfigurable photonic circuits for a wide spectrum of applications. Large-scale photonic switches constructed with a large number of 2$\times$2 elementary switches impose stringent requirements on the elementary switches. In contrast to conventional elementary switches based on mode interference or mode coupling, here we propose and realize a brand-new silicon MEMS 2$\times$2 elementary switch based on a split waveguide crossing (SWX) consisting of two halves. With this structure, the propagation direction of the incident light can be manipulated to implement the OFF and ON states by splitting or combining the two halves of the SWX, respectively. More specifically, we introduce refractive-index engineering by incorporating subwavelength-tooth (SWT) structures on both reflecting facets to further reduce the excess loss in the ON state. Such a unique switching mechanism features a compact footprint on a standard SOI wafer and enables excellent photonic performance with low excess loss of 0.1-0.52/0.1-0.47dB and low crosstalk of $\lt$-37/-22.5dB over an ultrawide bandwidth of 1400-1700nm for the OFF/ON states in simulation, while in experiment, excess loss of 0.15-0.52/0.42-0.66dB and crosstalk of $\lt$-45.5/-25dB over the bandwidth of 1525-1605 nm for the OFF/ON states have been measured.Furthermore, excellent MEMS characteristics such as near-zero steady-state power consumption, low switching energy of sub-pJ, switching speed of {\mu}s-scale, durability beyond 10^9 switching cycles, and overall device robustness have been achieved. Finally, a 16$\times$16 switch using Benes topology has also been fabricated and characterized as a proof of concept, further validating the suitability of the SWX switches for large-scale integration.

Optics,Applied Physics
High-performance Silicon PIN Diode Switches in the 2-Μm Wave Band.

Chunlei Sun,Maoliang Wei,Bo Tang,Hui Ma,Peng Zhang,Ye Luo,Jialing Jian,Lan Li,Hongtao Lin

DOI: https://doi.org/10.1364/ol.453786

2022-01-01

Abstract:The 2-µm wave band has attracted significant research interest due to its potential applications for next-generation high-capacity optical communication and sensing. As the key component, fast optical switches are essential for an advanced and reconfigurable optical network. Motivated by this prospect, we propose and demonstrate two typical silicon PIN diode switches at 2 µm. One is based on a coupled microring resonator (CMRR), and the other is based on a Mach-Zehnder interferometer (MZI) with a push-pull-like configuration. The measured insertion loss of the CMRR switch is <2.5 dB, and the cross talk is <-10.8 dB. The insertion loss of the MZI switch is <2 dB, and the cross talk is <-15.6 dB. The switch times of these two structures are both lower than 12.5 ns.
2×2 Electrooptical Switch in Silicon-on-insulator Waveguide

QF Yan,JZ Yu,SW Chen,ZC Fan,JS Xia,ZL Liu

DOI: https://doi.org/10.1109/edssc.2003.1283490

2003-01-01

Abstract:A 2 x 2 Mach-Zehnder interferometer electrooptical switch integrated in silicon-on-insulator using multimode interference 3-dB couplers as splitter and combiner has been proposed and fabricated. Free carriers plasma dispersion effect was utilized to realize light modulation in silicon. Switching operation was achieved at an injection current of 358mA and which can be much reduced by optimizing the PIN structure and improving fabrication process. Extinction ratio of 7.7dB and crosstalk of 4.8dB has been observed.
New Concept of Silicon Photonic MEMS Switch Based on Total Internal Reflection

Yi Sun,Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2020.t1d.4

2020-01-01

Abstract:A novel silicon photonic MEMS switch based on total internal reflection (TIR) is proposed for the first time. The key element is a multimode interference (MMI) waveguide crossing with a switchable gap. This photonic switch works very well with a low excess loss of ~0.2 dB and a high extinction ratio of >23 dB in an ultra-broad wavelength range of 1250-1650 nm in the OFF state. The excess loss is still as low as 0.18 dB and the extinction ratio is as high as 58 dB in the ON state.
Scalable Nonblocking &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$4\times4$ &Lt;/tex-Math> &Lt;/inline-Formula> Silicon Optical Switch Based on Dual-Microring Resonators

Xiaoqing Guo,Gencheng Wang,Tingge Dai,Bei Chen,Yuehai Wang,Hui Yu,Zhenhui Li,Jianyi Yang

DOI: https://doi.org/10.1109/lpt.2019.2896439

IF: 2.6

2019-01-01

IEEE Photonics Technology Letters

Abstract:We demonstrate a reconfigurable 4 × 4 silicon optical switch network by using an architecture of Half-Crossbar. It has the advantage of flexible scalability and utilizes fewer elements. The proposed switch is composed of six dual-microring resonators tuned by the thermo-optic effect. The footprint is only 176 μm × 632 μm. At the wavelength of 1557 nm, the average insertion loss is smaller than 2.5 dB according to the results of all 24 switching states. Its rising response time is about 4.9 μs. The experiment verified the optical data transmission ability of the proposed switch network.
Nonvolatile Silicon Photonic MEMS Switch Based on Centrally-Clamped Stepped Bistable Mechanical Beams

Qian Ma,Yinpeng Hu,Ye Lu,Yunzhi Liu,Huan Li,Daoxin Dai

2024-09-11

Abstract:High-performance photonic switches are essential for large-scale optical routing for AI large models and Internet of things. Realizing nonvolatility can further reduce power consumption and expand application scenarios. We propose a nonvolatile 2*2 silicon photonic micro-electromechanical system (MEMS) switch compatible with standard silicon photonic foundry processes. The switch employs electrostatic comb actuator to change the air gap of the compact horizontal adiabatic coupler and achieves nonvolatility with centrally-clamped stepped bistable mechanical beams. The photonic switch features a 10s us-scale switching speed and a 10s fJ-scale simulated switching energy within a 100*100 um2 footprint, with <=12 V driving voltages. This 2*2 switch can be used in a variety of topologies for large-scale photonic switches, and its nonvolatility can potentially support future photonic FPGA designs.

Applied Physics,Optics
Nonvolatile Silicon MEMS Optical Switch Based on Bistable Mechanical Beams

Qian Ma,Yinpeng Hu,Ye Lu,Yunzhi Liu,Huan Li,Daoxin Dai

DOI: https://doi.org/10.1109/OECC56963.2023.10209727

2023-01-01

Abstract:We have proposed and implemented a $2 \times 2$ nonvolatile silicon MEMS optical switch based on bistable mechanical beams driven by electrostatic comb actuators, which is fully compatible with standard silicon photonics foundry processes.
Fabrication of Silicon Photonic Devices by Utilizing Industrial CMOS Technology

Yong Zhao,Haifeng Zhou,Wanjun Wang,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1117/12.840469

2009-01-01

Abstract:Using 0.8μm industrial CMOS technology, a 1×2 optical switch based on the carrier dispersion effect was fabricated. The device employed the conventional P-I-N structure with a typical 1μm-wide waveguide. The main process flow is presented in detail. The switching extinction ratio and the speed of the 1×2 switch are 21dB and 20ns, respectively. The fabrication repeatability is stable and reliable.
Mach-Zehnder based 2×2 electro-optical switches on silicon-on-insulator with low crosstalk

Wanjun Wang,Yong Zhao,Haifeng Zhou,Ting Hu,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/group4.2012.6324166

2012-01-01

Abstract:We report the demonstrations of two Mach-Zehnder based 2 × 2 electro-optical switches with low crosstalk. One is with assist of variable optical attenuator and the other is based on cascaded Mach-Zehnder interferometer.
2/spl times/2 electrooptical switch in silicon-on-insulator waveguide

qingfeng yan,jinzhong yu,shaowu chen,zhongchao fan,jinsong xia,zhongli liu

2003-01-01

Abstract:A 2/spl times/2 Mach-Zehnder interferometer electrooptical switch integrated in silicon-on-insulator using multimode interference 3-dB couplers as splitter and combiner has been proposed and fabricated. Free carriers plasma dispersion effect was utilized to realize light modulation in silicon. Switching operation was achieved at an injection current of 358 mA and which can be much reduced by optimizing the PIN structure and improving fabrication process. Extinction ratio of 7.7 dB and crosstalk of 4.8 dB has been observed.
Mach-Zehnder based 2X2 electro-optical switches on silicon-on-insulator with low crosstalk

Wanjun Wang,Yong Zhao,Haifeng Zhou,Ting Hu,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/GROUP4.2012.6324166

2012-01-01

Abstract:We report the demonstrations of two Mach-Zehnder based 2 x 2 electro-optical switches with low crosstalk. One is with assist of variable optical attenuator and the other is based on cascaded Mach-Zehnder interferometer. © 2012 IEEE.
Compact Nonvolatile 2×2 Photonic Switch Based on Two-Mode Interference

Chunmeng Song,Yixiao Gao,Guoxiang Wang,Yimin Chen,Peipeng Xu,Chenjie Gu,Yaocheng Shi,Xiang Shen

DOI: https://doi.org/10.1364/oe.467736

IF: 3.8

2022-01-01

Optics Express

Abstract:On-chip nonvolatile photonic switches enabled by phase change materials (PCMs) are promising building blocks for power-efficient programmable photonic integrated circuits. However, large absorption loss in conventional PCMs (such as Ge2Sb2Te5) interacting with weak evanescent waves in silicon waveguides usually leads to high insertion loss and a large device footprint. In this paper, we propose a 2×2 photonic switch based on two-mode interference in a multimode slot waveguide (MSW) with ultralow loss Sb2S3 integrated inside the slot region. The MSW supports two lowest order TE modes, i.e., symmetric TE00 and antisymmetric TE01 modes, and the phase of Sb2S3 could actively tune two-mode interference behavior. Owing to the enhanced electric field in the slot, the interaction strength between modal field and Sb2S3 could be boosted, and a photonic switch containing a ∼9.4 µm-long Sb2S3-MSW hybrid section could effectively alter the light transmission between bar and cross ports upon the phase change of Sb2S3 with a cross talk (CT) less than -13.6 dB and an insertion loss (IL) less than 0.26 dB in the telecommunication C-band. Especially at 1550 nm, the CT in the amorphous (crystalline) Sb2S3 is -36.1 dB (-31.1 dB) with a corresponding IL of 0.073 dB (0.055 dB). The proposed 2×2 photonic switch is compact in size and compatible with on-chip microheaters, which may find promising applications in reconfigurable photonic devices.
Non-volatile Polarization-Insensitive 1×2 Silicon Optical Switch Using Phase-Change Materials

Wei Liang,Weiwei Chen,Pengjun Wang,Shixun Dai,Bohao Zhang,Yaxun Zhou,Jun Li,Yan Li,Qiang Fu,Tingge Dai,Hui Yu,Jianyi Yang

DOI: https://doi.org/10.1016/j.optcom.2020.126407

IF: 2.4

2021-01-01

Optics Communications

Abstract:In this paper, a non-volatile polarization-insensitive 1×2 silicon optical switch utilizing phase-change materials is presented. The presented device is composed of three polarization beam combiners/splitters, two directional couplers with phase change materials, and a polarization-insensitive waveguide crossing. By adjusting the phase state of phase-change material, polarization-insensitive switching behavior is realized. As an example, the proposed switch using Ge2Sb2Te5 is comprehensively optimized and analyzed based on particle swarm optimization algorithm and finite difference time domain method. The designed device can have a crosstalk of less than −15.98 dB and an insertion loss of smaller than 0.95 dB over the C-band in the case of TE polarization, while a maximum crosstalk of −13.53 dB and a maximum insertion loss of 1.37 dB can be obtained within the C-band in the case of TM polarization.
Low-voltage Micromachining-Based Scalable Optical Switch

JF Bao,Y Yuan,ZH Cao,X Wu

DOI: https://doi.org/10.1117/12.483176

2002-01-01

Abstract:We report a fiber optic switch based on a novel MEMS technology allowing fast switch (<2 ms), excellent isolation (>50dB) and wide bandwidth. Each switch module consists of an electromagnetically actuated gold-coated silicon mirror rotating around a 100 mum diameter shaft and a miniature 5V driven coil. Enabling technology is precision EDM machining and laser cutting. The switch is scalable to 8 X 8 and allows the realization of high capacity cross-connects.
Large-Scale High-Speed Photonic Switches Fabricated on Silicon-Based Photonic Platforms

Tao Chu,Nuo Chen,Weijie Tang,Yating Wu

DOI: https://doi.org/10.1364/OFC.2023.M4J.6

2023-01-01

Abstract:Large-scale high-speed photonic switches were demonstrated on silicon-on-insulator and thin-film Lithium Niobate platforms, respectively. Ultra-low-loss spot-size-converter, grating coupler, waveguide crossing, and high-speed switch unit are developed, as well as an integrated 128 x 128 switch.
Non-volatile 2 × 2 optical switch using multimode interference in an Sb2Se3-loaded waveguide

Kun Shang,Lei Niu,Huimin Jin,Haoxian Wang,Wei Zhang,Fuwan Gan,Peipeng Xu

DOI: https://doi.org/10.1364/OL.511301

2024-02-01

Abstract:We propose a non-volatile 2 × 2 photonic switch based on multimode interference in an Sb2Se3-loaded waveguide. The different modal symmetries of the TE0 and TE1 modes supported in the multimode region change their propagation constants distinctly upon the Sb2Se3 phase transition. Through careful optical design and FDTD optimization of the multimode waveguide dimensions, efficient switching is achieved despite the modest index contrast of Sb2Se3 relative to Ge2Sb2Te5. The fabricated optical switch demonstrates favorable characteristics, including low insertion loss of ∼1 dB, a compact length of ∼27 µm, and small cross talk below -15 dB across a 35 nm bandwidth. Such non-volatile and broadband components will be critical for future high-density programmable photonic-integrated circuits for optical communications and signal processing.
Fast, High-radix Silicon Photonic Switches.

Tao Chu,Lei Qiao,Weijie Tang,Defeng Guo,Weike Wu

DOI: https://doi.org/10.1364/ofc.2018.th1j.4

2018-01-01

Abstract:With a limited number of built-in power monitors to detect the optimum operating points of all switch units, we demonstrated a 32 × 32 MZI-based silicon electro-optical switch operating with nanosecond speeds.
Wavelength-Selective 2 × 2 Optical Switch Based on a Ge<inf>2</inf>Sb<inf>2</inf> Te<inf>5</inf>-Assisted Microring for the 2-μm Wavelength Band

Weixun Zhu,Xing Yang,Huan Li,Liangjun Lu,Linjie Zhou,Daoxin Dai

DOI: https://doi.org/10.1109/ACP/POEM59049.2023.10369648

2023-01-01

Abstract:We propose and demonstrate a wavelength-selective 2 ×2 silicon photonic switch using a Ge2Sb2Tes-assisted microring-resonator for the 2-μm wavelength-band, showing an extinction ratio of ~20 dB and a low excess loss of ~1 dB.
Optimization of silicon-on-insulator based optical switch using tapered waveguides

Zhi-yong Li,Shao-wu Chen,Jin-zhong Yu

DOI: https://doi.org/10.1007/s11801-007-7008-0

2007-09-01

Optoelectronics Letters

Abstract:Optimized 2×2 switches based on silicon-on-insulator (SOI) were demonstrated. In the design, single mode rib waveguides and multimode interferences (MMIs) are connected by tapered waveguides to reduce the mode coupling loss between the two types of waveguides. The average insertion loss of the switches is about −16.9 dB and the excess loss of one is measured of −1.3 dB. The worst crosstalk is larger than 25 dB. Experimental results indicate that some of the main characteristics of optical switches are improved in the modified design, which is according with theoretic analysis. The novel design can be used to improve the characteristics of optical switch matrixes based on 2×2 switch units.

optics
Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

Wanjun Wang,Yong Zhao,Ting Hu,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/acpc.2012.as3b.4

2012-01-01

Abstract:In this paper, we experimentally demonstrated a series of Mach-Zehnder optical switches on silicon-on-insulator, including the 2×2, 1×3 electro-optical switch, 3×3 thermo-optical switch using a single combined phase shifter, four-port broadband electro-optical routing switch.

2 × 2 Silicon Photonic MEMS Switch Based on Split Waveguide Crossing

Silicon photonic MEMS switches based on split waveguide crossings

High-performance Silicon PIN Diode Switches in the 2-Μm Wave Band.

2×2 Electrooptical Switch in Silicon-on-insulator Waveguide

New Concept of Silicon Photonic MEMS Switch Based on Total Internal Reflection

Scalable Nonblocking &Lt;inline-Formula&gt; &Lt;tex-Math Notation="latex"&gt;$4\times4$ &Lt;/tex-Math&gt; &Lt;/inline-Formula&gt; Silicon Optical Switch Based on Dual-Microring Resonators

Nonvolatile Silicon Photonic MEMS Switch Based on Centrally-Clamped Stepped Bistable Mechanical Beams

Nonvolatile Silicon MEMS Optical Switch Based on Bistable Mechanical Beams

Fabrication of Silicon Photonic Devices by Utilizing Industrial CMOS Technology

Mach-Zehnder based 2×2 electro-optical switches on silicon-on-insulator with low crosstalk

2/spl times/2 electrooptical switch in silicon-on-insulator waveguide

Mach-Zehnder based 2X2 electro-optical switches on silicon-on-insulator with low crosstalk

Compact Nonvolatile 2×2 Photonic Switch Based on Two-Mode Interference

Non-volatile Polarization-Insensitive 1×2 Silicon Optical Switch Using Phase-Change Materials

Low-voltage Micromachining-Based Scalable Optical Switch

Large-Scale High-Speed Photonic Switches Fabricated on Silicon-Based Photonic Platforms

Non-volatile 2 × 2 optical switch using multimode interference in an Sb2Se3-loaded waveguide

Fast, High-radix Silicon Photonic Switches.

Wavelength-Selective 2 × 2 Optical Switch Based on a Ge<inf>2</inf>Sb<inf>2</inf> Te<inf>5</inf>-Assisted Microring for the 2-μm Wavelength Band

Optimization of silicon-on-insulator based optical switch using tapered waveguides

Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

Scalable Nonblocking &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$4\times4$ &Lt;/tex-Math> &Lt;/inline-Formula> Silicon Optical Switch Based on Dual-Microring Resonators