Abstract:Two inductorless low-power differential low-noise amplifiers (LNAs) are designed for multiband wireless communication applications. Both LNAs are based on the combination of common-gate (CG) and shunt feedback topologies. In the first LNA, the cross-coupled push-pull structure with separated bias for nMOS and pMOS CG transistors is utilized to realize gm enhancement, partial noise cancellation, and bandwidth extension. In the second LNA, cascode transistors are utilized on the basis of the first topology to alleviate the Miller effect and to construct current steering structures, so as to extend the bandwidth. For both LNAs, in-depth analysis is given, and methods for sizing and biasing optimization under power constraint are proposed to obtain good overall performance tradeoffs while maintaining low-power consumption. The prototypes are implemented in 65-nm low-power CMOS technology. The first LNA achieves a gain of 21.2 dB, a noise figure (NF) of 3-3.5 dB over the 3-dB bandwidth of 200 MHz to 2.7 GHz and an IIP3 of -2 dBm at 1.1 GHz. It consumes 0.96 mW from 1.2-V supply. The second LNA exhibits a gain of 21.2 dB, an NF of 2.8-4 dB over the 3-dB bandwidth of 100 MHz to 4.3 GHz. It consumes 2 mW from 1.2-V supply. Each LNA occupies an area of 0.05 mm(2).

An Ultra Wide Band LNA with Current Reused Topology in <tex>0.18-\mu \mathrm{m}$</tex> GaAs pHEMT Process

Ultralow Power E-Band Low-Noise Amplifier with Three-Stacked Current-Sharing Amplification Stages in 28-Nm CMOS

Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

A Gm-boosted and current peaking wideband merged LNA and mixer

A 0.061-Mm² 1–11-Ghz Noise-Canceling Low-Noise Amplifier Employing Active Feedforward with Simultaneous Current and Noise Reduction

Design of a Broadband Ka-band MMIC LNA Using Deep Negative Feedback Loop.

A Compact 2.1–39 GHz Self-Biased Low-Noise Amplifier in 65 Nm CMOS Technology

Design of a 2–18 GHz low noise amplifier MMIC with current reused topology

Analysis And Design Of Inductorless Wideband Low-Noise Amplifier With Noise Cancellation Technique

A 11.2 Mw 48–62 GHz Low Noise Amplifier in 65 Nm CMOS Technology

A 2.8–10-GHz CMOS Current Reuse Cascaded Linearity Improving Ultra-Wideband Low-Noise Amplifier

A 0.0081mm2 0.15–5.9-Ghz Low Noise Amplifier with Noise Cancelling and Current Reuse Techniques

An inductorless wideband low noise amplifier with current reuse and linearity enhancement

A 12.87-dB Gain 10.5-dBm OP<inf>ldB</inf>60-to-66-GHz LNA in 0.15-μm GaAs pHEMT Technology

A 12.87-dB Gain 10.5-dBm OP<sub>1dB</sub> 60-to-66-GHz LNA in 0.15-m GaAs pHEMT Technology

An Inductor-Less Highly Linear LNA with Noise Cancelling and Current Reusing for 3–5 GHz Low-Power UWB Receivers

Low Power 0.18µm CMOS Ultra Wideband Inductor-Less LNA Design for UWB Receiver

A 0.18 Mu M Cmos Ultra-Wideband Low-Noise Amplifier With High Iip3

A fully-integrated low-power 3.1-10.6GHz UWB LNA in 0.18μm CMOS

Wideband Inductorless Low-Power LNAs with Gm Enhancement and Noise-Cancellation.

Low Power 0.18&#x00b5;m CMOS Ultra Wideband Inductor-Less LNA Design for UWB Receiver

An Ultra Wide Band LNA with Current Reused Topology in <tex>0.18-\mu \mathrm{m}$</tex> GaAs pHEMT Process

Ultralow Power E-Band Low-Noise Amplifier with Three-Stacked Current-Sharing Amplification Stages in 28-Nm CMOS

Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

A Gm-boosted and current peaking wideband merged LNA and mixer

A 0.061-Mm² 1–11-Ghz Noise-Canceling Low-Noise Amplifier Employing Active Feedforward with Simultaneous Current and Noise Reduction

Design of a Broadband Ka-band MMIC LNA Using Deep Negative Feedback Loop.

A Compact 2.1–39 GHz Self-Biased Low-Noise Amplifier in 65 Nm CMOS Technology

Design of a 2–18 GHz low noise amplifier MMIC with current reused topology

Analysis And Design Of Inductorless Wideband Low-Noise Amplifier With Noise Cancellation Technique

A 11.2 Mw 48–62 GHz Low Noise Amplifier in 65 Nm CMOS Technology

A 2.8–10-GHz CMOS Current Reuse Cascaded Linearity Improving Ultra-Wideband Low-Noise Amplifier

A 0.0081mm2 0.15–5.9-Ghz Low Noise Amplifier with Noise Cancelling and Current Reuse Techniques

An inductorless wideband low noise amplifier with current reuse and linearity enhancement

A 12.87-dB Gain 10.5-dBm OP<inf>ldB</inf>60-to-66-GHz LNA in 0.15-μm GaAs pHEMT Technology

A 12.87-dB Gain 10.5-dBm OP<sub>1dB</sub> 60-to-66-GHz LNA in 0.15-m GaAs pHEMT Technology

An Inductor-Less Highly Linear LNA with Noise Cancelling and Current Reusing for 3–5 GHz Low-Power UWB Receivers

Low Power 0.18µm CMOS Ultra Wideband Inductor-Less LNA Design for UWB Receiver

A 0.18 Mu M Cmos Ultra-Wideband Low-Noise Amplifier With High Iip3

A fully-integrated low-power 3.1-10.6GHz UWB LNA in 0.18μm CMOS

Wideband Inductorless Low-Power LNAs with Gm Enhancement and Noise-Cancellation.

Low Power 0.18&amp;#x00b5;m CMOS Ultra Wideband Inductor-Less LNA Design for UWB Receiver

Low Power 0.18µm CMOS Ultra Wideband Inductor-Less LNA Design for UWB Receiver