A 12.87-dB Gain 10.5-dBm OP<sub>1dB</sub> 60-to-66-GHz LNA in 0.15-m GaAs pHEMT Technology

Xuefeng Li,Yuting Wang,Tianxiang Wu,Yong Chen,Junyan Ren,Shunli Ma
DOI: https://doi.org/10.1109/PRIMEASIA56064.2022.10103971
2022-01-01
Abstract:This paper presents a V-band low noise amplifier (LNA) implemented in a 0.15-mu m Gallium Arsenide (GaAs) pseudomorphic high electron-mobility transistor (pHEMT) technology. The LNA adopts a three-stage common-source (CS) topology. Each transistor has a bias circuit, and the microstripline inductor is used to realize the input noise matching network, the interstage, and the output matching network. Circuit simulations show that our LNA scores a 12.87-dB small-signal gain, the 3-dB bandwidth ranges from 60 GHz to 66 GHz, and the current consumption is 30 mA under a 5-V supply voltage. Its noise figure is 5.9 dB, and the output 1-dB compression point is 10.5 dBm. The chip area is 1.32 x1.5 mm(2).
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