Abstract:A wideband low-noise amplifier (LNA) with low and flat noise figure (NF) is presented in this article. For conventional wideband noise matching, the noise performance in the high-frequency region of the entire wideband is usually deteriorated due to the frequency-dependent nature of the minimum noise figure (NFmin) for a MOSFET. To address this issue, a novel wideband noise matching approach aiming at noise matching in high band is proposed. This approach can reduce the NF in high band at the cost of a slight NF increase in low band, eventually achieving a low and flat NF and thus a better overall noise performance for a wideband LNA. In addition, the multistage noise matching technique is employed at high frequencies to further reduce the NF caused by the second amplification stage. To validate the proposed techniques, a two-stage LNA prototype was designed and fabricated using a 65 nm CMOS process. The experimental results indicate a peak gain of 16.6 dB with a −3 dB bandwidth (BW) from 7.2 to 27.3 GHz (a fractional BW of 116%). Within the entire band of interest, the simulated NF is low and almost constant (3.3–3.4 dB), while the measured NF falls within the range of 3.30–3.72 dB. Considering the uncertainty of NF measurement, a 0.21 dB NF flatness is one of the best results among the reported millimeter-wave wideband LNAs. The measured third-order input intercept point (IIP3) is −6 dBm at 20 GHz, while the power consumption is 13.2 mW. In addition, only two passive transformers are used in this design, leading to a compact chip core area (0.14 mm2).

A 2-V 1.4-dB NF GaAs MMIC LNA for K-Band Applications

Design of a Broadband Ka-band MMIC LNA Using Deep Negative Feedback Loop.

A Compact 2.1–39 GHz Self-Biased Low-Noise Amplifier in 65 Nm CMOS Technology

A 0.061-Mm² 1–11-Ghz Noise-Canceling Low-Noise Amplifier Employing Active Feedforward with Simultaneous Current and Noise Reduction

3-10 GHz self-biased resistive-feedback lna with inductive source degeneration

Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives

Millimeter-Wave Low-Noise Amplifier Design in 28-nm Low-Power Digital CMOS

A 3.4db NF K-Band LNA in 65nm CMOS Technology

A 7.2–27.3 GHz CMOS LNA With 3.51 ±0.21 dB Noise Figure Using Multistage Noise Matching Technique

28 GHz Compact LNAs with 1.9 Db NF Using Folded Three-Coil Transformer and Dual-Feedforward Techniques in 65nm CMOS

A 12.87-dB Gain 10.5-dBm OP<inf>ldB</inf>60-to-66-GHz LNA in 0.15-μm GaAs pHEMT Technology

A 12.87-dB Gain 10.5-dBm OP<sub>1dB</sub> 60-to-66-GHz LNA in 0.15-m GaAs pHEMT Technology

An MMIC LNA for Millimeter-Wave Radar and 5G Applications with GaN-on-SiC Technology

A 23-34 GHz Wideband GaN Low-Noise Amplifier for 5G Millimeter-Wave Applications

A 28-nm E-band low noise amplifier with minimum 3.8 dB noise figure

A 26–28 GHz, Two-Stage, Low-Noise Amplifier for Fifth-Generation RF (Radio Frequency) and Millimeter-Wave Applications

A Low-power, High-gain and Excellent Noise Figure GaN-on-SiC LNA Monolithic Microwave Integrated Circuit (MMIC) operating at Ka-band for 5G/6G Application

28 GHz Compact LNAs with 1.9 Db Minimum NF Using Folded Three-Coil Transformer and Dual-Feedforward Techniques for Phased Array Systems

A K-Band High-Gain Lna In 0.13-Mu M Rf Cmos

Differential BroadBand (1–16 GHz) MMIC GaAs mHEMT Low-Noise Amplifier for Radio Astronomy Applications and Sensing