Abstract:The information explosion inmodern society requires increasingly higher densities in data storage, which is gradually becoming difficult to achieve through traditional binary memory techniques. Resistance switching random access memory (RRAM), as a promising high-density memory solution, is gradually attracting both fundamental and industrial interest. RRAMs consist of two electrodes sandwiching a thin layer of active material that, under an external electric eld, possesses different conductive states, which are considered “0” or “1” for information storage. In addition, due to their simple three-layers structure, RRAMs can be used for three-dimensional stacking and can dramatically expand the information density. Most importantly, if multiple conductive states exist in the active materials, each memory cell can store more than two states, such as “0”, “1”, “2”.. This multilevel RRAM technique is expected to result in a revolutionary enhancement in the information density from 2 to X (where n is the cell density and X is the state number of each cell). Aer decades of intensive research, many inorganic oxides, polymers and small molecules have been found to exhibit multilevel resistive switching behaviours and are thus considered candidate active materials for multilevel RRAMs. However, to enable industrial use, RRAM devices must show good reproducibility, including a high multilevel memory device yield and narrow distribution of OFF/ON1/ON2 switching voltages. Unfortunately, numerous studies have explored new RRAM active materials based on the measurements on individual devices, but statistical data on a large batch are rarely reported. Our recent statistical work demonstrated that

Highly Controllable Multilevel Performance in WS2 Quantum Dots-Based Memristor

Study on Multilevel Resistive Switching Behavior with Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAM

Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory

ing to achieve organic ternary memory with a high device yield and improved performance †

Reliable Multistate Data Storage with Low Power Consumption by Selective Oxidation of Pyramid-Structured Resistive Memory

Electric Field‐Induced Area Scalability toward the Multilevel Resistive Switching

High-performance Resistive Switching Memory with Embedded Molybdenum Disulfide Quantum Dots

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

Improved Al2O3 RRAM Performance Based on SiO2/MoS2 Quantum Dots Hybrid Structure

Improved Al 2 O 3 RRAM performance based on SiO 2 /MoS 2 quantum dots hybrid structure

Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array.

Study of Multi-Level Characteristics for 3D Vertical Resistive Switching Memory.

A High Reliable Design Of Memristor-Based Multilevel Memory

High-performance Ta2O5-based Resistive Random-Access Memory with Embedded Graphene Quantum Dots and Pt-Ag Composite Active Layer

Multilevel Resistive Switching With Ionic And Metallic Filaments

Novel 2D Materials-based Resistive Devices

Low‐Energy Oxygen Plasma Injection of 2D Bi2Se3 Realizes Highly Controllable Resistive Random Access Memory

Simultaneous Implementation of Resistive Switching and Rectifying Effects in a Metal-Organic Framework with Switched Hydrogen Bond Pathway.

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Electrocatalytic Hydrolysis-Modulated Multistate Resistive Switching Behaviors in Memristors