Abstract:In recent years, GaSb-on-Si direct heteroepitaxy has been highly desirable to extend the operating wavelength range into mid-infrared and high-mobility applications, such as free-space communications, gas sensing, and hyperspectral imaging. High-quality GaSb films on Si remain challenging due to the high density of defects generated during the growth. For this purpose, epitaxial GaSb films were grown by molecular beam epitaxy on on-axis Si(001). Due to the large lattice mismatch (12.2%) between GaSb and Si, here, we proposed a radical design and growth strategy with the primary objective of achieving the annihilation of antiphase boundaries (APBs) and the reduction of threading dislocation density (TDD). Benefitting from a V-grooved Si hollow structure, we demonstrated the growth of emerging-APB-free GaSb film on Si(001) with low mosaicity. Moreover, by introducing InGaSb/GaSb dislocation filtering layers, the atomically flat surface root mean square roughness is improved to 0.34 (on Si) and 0.14 nm (on GaAs/Si). Moreover, the corresponding TDD can be reduced to 3.5 × 10 7 and 2 × 10 7 cm −2 , respectively, one order of magnitude lower than the minimum value found in the literature. These reported results are a powerful lever to improve the overall quality of epitaxial Si-based antimonide, which is of high interest for various devices and critical applications, such as laser diodes, photo-detectors, and solar cells.

The Si (001) Substrate with Sub-Nano Streaky Surface: Preparation and Its Application to High-Quality Growth of GaAs Heteroepitaxial-Layer

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Study of Si and Ge growth on Si(100) surface

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Lithography-Free Nanoscale Patterned Growth of Gaas on Si(001) with Sub-100-Nm Silica Nanoparticles by Molecular Beam Epitaxy

Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Step-edge-guided nucleation and growth mode transition of α-Ga 2 O 3 heteroepitaxy on vicinal sapphire

Novel Growth and Properties of GaAs Nanowires on Si Substrates

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

Investigation of Defect Formation in InGaAs on GaP/Si (100) Substrates

Effect of InxGa1 − Xas Interlayer on the Properties of In0.3Ga0.7As Epitaxial Films Grown on Si (111) Substrates by Molecular Beam Epitaxy

The Epitaxy of GaN in Deep and Submicron Holes over Si Substrate

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Growth and Characterization of Silicon Molecular Beam Epilayers on GaP (111) Substrates

Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates

Growth of High-Quality AlGaN Epitaxial Films on Si Substrates

Step-edge-guided Nucleation and Growth Mode Transition of Α-Ga2o3 Heteroepitaxy on Vicinal Sapphire