Abstract:The growing demand of Internet of things based portable gadgets motivate to develop low power static random access memory (SRAM) cell. It occupies large portion in modern system on chip devices. In this context, a detailed review on various SRAM cell topologies has been performed which includes comparative analysis of design parameters and challenges. To perform the comparative analysis, considered SRAM cell topologies are simulated with cadence virtuoso IC6.1.5-64b at 45 nm generic process design kit technology file. It is worthy to notice that 9T SRAM cell has highest value of read stability among considered cells. It is attributed to use of differential read decoupled structure. The 7T SRAM cell has highest value of write ability among considered cells. It is observed that 8T SRAM cell has lowest read power dissipation among considered cells. It happens due to the use of stack transistor in read path of the cell. The lowest value of read access time is also observed in 8T SRAM cell among considered SRAM cells. It is 1.82×\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$\times$$\end{document} higher as compared to conventional 6T SRAM cell. Further, the write access time of 9T SRAM cell is lowest among considered cells. This is 1.41×\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$\times$$\end{document} less as compared to conventional 6T SRAM cell. Static noise per unit area to power delay product ratio (SAPR) is used to evaluate the overall performance of considered SRAM topologies. It is observed that 8T SRAM cell has the highest value of SAPR among considered SRAM cells. It is 1.91×\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$\times$$\end{document} as compared to conventional 6T SRAM cell. All the comparison has been done at 1.0 V supply voltage.

Single-Ended Near Threshold 9T SRAM for Portable Low-Power Biomedical Applications

Design of dual port 9T SRAM cell with parallel processing and high performance computing

Design analysis of a low-power, high-speed 8 T SRAM cell using dual-threshold CNTFETs

A Low-Energy, Stable, Single-Bitline Accessed FinFET 9T-SRAM

Reliable single-ended ultra-low power GNRFETs-based 9T SRAM cell with improved read and write operations

A 256kb 9T Near-Threshold SRAM With 1k Cells per Bit-Line and Enhanced Write and Read Operations

Performance Analysis of 6T and 9T SRAM

A low power static noise margin enhanced reliable 8 T SRAM cell

Bit-Interleaving-Enabled 8t Sram with Shared Data-Aware Write and Reference-Based Sense Amplifier

A Single Bitline Highly Stable, Low Power With High Speed Half-Select Disturb Free 11T SRAM Cell

A Review on Performance Evaluation of Different Low Power SRAM Cells in Nano-Scale Era

Low-power and robust ternary SRAM cell with improved noise margin in CNTFET technology

Design of power efficient and reliable hybrid inverter approach based 11 T SRAM design using GNRFET technology

A FinFET based low-power write enhanced SRAM cell with improved stability

Near-Threshold Sram Design On 40-Nm Cmos Technology For Low Power Design

Analyzing the Performance of 6T SRAM Cell and 64×64 Memory Array at Lower Technology Nodes for Low Power Design

Novel 15T SRAM Cell for Low Voltage High Reliability Application

A near-threshold SRAM design with transient negative bit-line voltage scheme

A CNTFET Based Stable, Single-Ended 7T SRAM cell With Improved Write Operation

A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins

Low Voltage SRAM Cell Suitable for Bit-Interleaved Structure