Abstract:Recently, significant attention has been directed towards two-dimensional Janus materials owing to their unique structure and novel properties. In this work, we have introduced novel two-dimensional Janus monolayers, SZrAZ 2 (A = Si, Ge; Z = P, As), through first principles. Our primary focus was the investigation of the controllable electronic properties exhibited by the Janus SZrAZ 2 structures under the influence of strain and an external electric field. Our research findings indicate the dynamic and thermodynamic stability of Janus SZrAZ 2 (A = Si, Ge; Z = P, As) monolayers. In the equilibrium state, these monolayers exhibit properties of an indirect band gap semiconductor. When subjected to biaxial strain and an external electric field, we observed that the dependency of SZrSiAs 2 and SZrGeAs 2 monolayers on an external electric field is very weak. Their electronic properties can only be modulated by applying biaxial strain. For SZrSiP 2 and SZrGeP 2 monolayers, their electronic properties can be modulated under biaxial strain and an external electric field, resulting in a transition from semiconducting to metallic behavior. Finally, we calculated the carrier mobility of these four structures and observed that the SZrGeAs 2 monolayer exhibits a hole mobility of up to 597.52 cm 2 s −1 V −1 in the x -direction, whereas the SZrSiP 2 monolayer demonstrates an electron mobility of up to 479.30 cm 2 s −1 V −1 in the y -direction. In the x -direction, the electron mobility of SZrSiAs 2 and SZrGeP 2 monolayers was measured to be 189.88 and 528.44 cm 2 s −1 V −1 , respectively. These values are greater than or equivalent to that of experimentally synthesized MoS 2 (∼200 cm 2 s −1 V −1 ). Our research lays the foundation for utilizing two-dimensional Janus materials in electronic devices.

Tuning of the Electronic, Photocatalytic and Optical Properties of Janus XWAZ2 (X = S, Se, Te; A = Si, Ge; Z = N, P, As) Monolayers Via Strain and External Electric Field

Tuning of the electronic, photocatalytic and optical properties of Janus XWAZ 2 (X = S, Se, Te; A = Si, Ge; Z = N, P, As) monolayers via strain and external electric field

Tuning of the electronic and photocatalytic properties of Janus WSiGeZ4 (Z = N, P, and As) monolayers via strain engineering.

Regulating effect of biaxial strain on electronic, optical and photocatalytic properties in promising X2PAs (X = Si, Ge and Sn) monolayers

Strain and electric field induced electronic property modifications in two-dimensional Janus SZrAZ 2 (A = Si, Ge; Z = P, As) monolayers

Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides

Tuning the electronic structures and transport coefficients of Janus PtSSe monolayer with biaxial strain

Adjusting Electronic Properties of Janus SHfAZ2 (A═Si,Ge; Z═N, P, As) via Strain Engineering and an Electric Field

Strain engineering the electronic and photocatalytic properties of WS 2 /blue phosphene van der Waals heterostructures

Tunable Electronic Structures in Mpx3 (M = Zn, Cd; X = S, Se) Monolayers by Strain Engineering

Tunable electronic and optical properties of the WS 2 /IGZO heterostructure via an external electric field and strain: a theoretical study.

Tuning the Electronic Structure of Silicene and Germanene by Biaxial Strain and Electric Field

Tunable Electronic Properties of Novel 2D Janus MSiGeN4 (M = Ti, Zr, Hf) Monolayers by Strain and External Electric Field

Strain and Electric Field Engineering of G-ZnO/SnXY (X, Y = S, Se) S-Scheme Heterostructures for Photocatalyst and Electronic Device Applications: A Hybrid DFT Calculation

First-principles calculations on the mechanical, electronic, magnetic and optical properties of two-dimensional Janus Cr$_2$TeX (X= P, As, Sb) monolayers

Unraveling the strain tuning mechanism of interlayer excitons in WSe2/MoSe2heterostructure

Electronic, mechanical, optical and photocatalytic properties of two-dimensional Janus XGaInY (X, Y ;= S, Se and Te) monolayers

First-Principles Studies of Strain-Adjustable Janus WSSe Monolayer/g-GeC Monolayer Heterojunctions: Implications for Photoelectric and Switching Devices

Janus monolayer PtSSe under external electric field and strain: A first principles study on electronic structure and optical properties

Exploring tunable optoelectronic properties of two-dimensional GaS/PtSSe heterostructures under biaxial strain and external electric field

A first-principles study of electronic and optical properties of the tetragonal phase of monolayer ZnS modulated by biaxial strain