Tunable Electronic Structures in Mpx3 (M = Zn, Cd; X = S, Se) Monolayers by Strain Engineering

Hui Xiang,Bo Xu,Yidong Xia,Jiang Yin,Zhiguo Liu

DOI: https://doi.org/10.1039/c6ra14101c

IF: 4.036

2016-01-01

RSC Advances

Abstract:Tunable electronic structures in MPX3 (M = Zn, Cd; X = S, Se) monolayers by strain are investigated, and the substitution of MX monolayers by MPX3 is proposed.

What problem does this paper attempt to address?

Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides

Huating Liu,Zongyu Huang,Chaoyu He,Yanbing Wu,Lin Xue,Chao Tang,Xiang Qi,Jianxin Zhong

DOI: https://doi.org/10.1063/1.5041486

IF: 2.877

2019-02-28

Journal of Applied Physics

Abstract:We studied the structures and electronic properties of Janus transition-metal dichalcogenide monolayers MXY (M = Mo, W; X ≠ Y = S, Se, Te) by first-principles calculations. The results of the electronic band structures and the density of states reveal that all of the MXY monolayers show semiconducting characteristics. Particular attention has been focused on the bandgap engineering by applying in-plane biaxial compressive and tensile strain. It is observed that the bandgap values of the MXY monolayers decrease with the increase of strain degree under the tension and compression biaxial strain, and a semiconductor-to-metal transition can be undergone at a critical value of strain. The possibility of the tunable energy gap over a wide range makes MXY monolayers potential candidates for nanoelectronics and optoelectronics.

physics, applied
Exploring electronic features in monolayer and bilayer MX 2 (M = Hf, Zr; X = S, Se) structures under shear strain

Jinlin Bao,Guili Liu,Lu Yang,Feng Li,Zhonghua Yang,Guoying Zhang

DOI: https://doi.org/10.1016/j.mtcomm.2024.108962

IF: 3.8

2024-04-23

Materials Today Communications

Abstract:This study employed first-principles calculations to investigate the dynamic stability of monolayer, bilayer, and heterostructure systems of four MX 2 (M = Hf, Zr and X = S, Se) TMDCs, as well as the influence of shear strain on their electronic properties. The computed binding energies and phonon dispersions demonstrate the excellent dynamic stability of bilayer systems, while the small effective masses of electrons and holes in monolayer systems suggest high carrier mobility. Under shear strain, the bandgap size and type of monolayer MX 2 system and their vdW heterostructures are effectively modulated, transitioning to metallic behavior under certain strain conditions. Both types of heterostructures exhibit type-II band alignment, serving as direct bandgap semiconductors, facilitating effective electron-hole separation between different layers and thereby reducing recombination. This study elucidates the tunability of the electronic properties of monolayers, bilayers, and heterostructures of MX 2 systems under shear strain, which is important for expanding material functionalities and optimizing device performance.

materials science, multidisciplinary
Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Yalan Yan,Shuang Ding,Xiaonan Wu,Jian Zhu,Dengman Feng,Xiaodong Yang,Fangfei Li

DOI: https://doi.org/10.1039/d0ra07288e

IF: 4.036

2020-01-01

RSC Advances

Abstract:Transition-metal dichalcogenides (TMDs) have become one of the recent frontiers and focuses in two-dimensional (2D) materials fields thanks to their superior electronic, optical, and photoelectric properties. Triggered by the growing demand for developing nano-electronic devices, strain engineering of ultrathin TMDs has become a hot topic in the scientific community. In recent years, both theoretical and experimental research on the strain engineering of ultrathin TMDs have suggested new opportunities to achieve high-performance ultrathin TMDs based devices. However, recent reviews mainly focus on the experimental progress and the related theoretical research has long been ignored. In this review, we first outline the currently employed approaches for introducing strain in ultrathin TMDs, both their characteristics and advantages are explained in detail. Subsequently, the recent research progress in the modification of lattice and electronic structure, and physical properties of ultrathin TMDs under strain are systematically reviewed from both experimental and theoretical perspectives. Despite much work being done in this filed, reducing the distance of experimental progress from the theoretical prediction remains a great challenge in realizing wide applications of ultrathin TMDs in nano-electronic devices.
Tailoring the Electronic, Mechanical, and Carrier Transport Properties of 1t‐sns2 Monolayer Via Strain Engineering: A First-Principles Study

Jingyi Zhang,Shulin Bai,Da Wan,Dongming Luo,Mengxiu Wu,Xiaodong Li,Shuwei Tang

DOI: https://doi.org/10.1016/j.mtcomm.2023.107636

IF: 3.8

2024-01-01

Materials Today Communications

Abstract:Two-dimensional metal dichalcogenides have garnered significant interest in the realm of electronic applications on account of their tunable electronic structures and high carrier mobility. Utilizing first-principles calculations and deformation potential (DP) theory, a comprehensive investigation on the electronic, mechanical, and carrier transport properties of 1T-SnS2 monolayer under strain engineering is investigated in this work. The 1T-SnS2 monolayer emerges as energetically stable within an applied equal-biaxial strain interval of -8% to 8%, satisfying Born's criterion for the elastic constants and thus manifesting remarkable mechanical stability. The lattice parameter, bond length, bond angle, and bandgap dynamically respond to the applied equal-biaxial strain. The band structure calculated using generalized gradient approximation (GGA) and spin-orbit coupling (SOC) of the 1 T-SnS2 monolayer demonstrates the characteristic of an indirect bandgap semiconductor, accompanied by tunable bandgap under strain engineering. Additionally, the carrier transport properties of 1T-SnS2 monolayer under strain engineering are also evaluated on the basis of DP theory, and a pronounced anisotropy is discovered in the effective mass, carrier relaxation time, and carrier mobility along the x- and y-direction. Notably, the application of a strain of -4% and 4% on the 1T-SnS2 monolayer has resulted in high electron mobility of 6233.21 cm2/V & sdot;s and hole mobility of 1195.62 cm2/V & sdot;s. Our present work not only underscores the substantial influence of strain engineering on the electronic, mechanical, and carrier transport properties of 1 T-SnS2 monolayer but also provides critical insights into the strain-based tuning of two-dimensional metal dichalcogenides for electronics and optoelectronics.
Unraveling the strain tuning mechanism of interlayer excitons in WSe2/MoSe2heterostructure

Anping Ge,Xun Ge,Liaoxin Sun,Xinle Lu,Lei Ma,Xinchao Zhao,Bimu Yao,Xin Zhang,Tao Zhang,Wenji Jing,Xiaohao Zhou,Xuechu Shen,Wei Lu

DOI: https://doi.org/10.1088/1361-6528/ad2232

IF: 3.5

2024-02-09

Nanotechnology

Abstract:Atomically thin transition metal dichalcogenides (TMDs) exhibit rich excitonic physics, due to reduced dielectric screening and strong Coulomb interactions. Especially, some attractive topics in modern condensed matter physics, such as correlated insulator, superconductivity, topological excitons bands, are recently reported in stacking two monolayer (ML) TMDs. Here, we clearly reveal the tuning mechanism of tensile strain on interlayer excitons (IEXs) and intralayer excitons (IAXs) in WSe2/MoSe2heterostructure (HS) at low temperature. We utilize the cryogenic tensile strain platform to stretch the HS, and measure by micro-photoluminescence (μ-PL). The PL peaks redshifts of IEXs and IAXs in WSe2/MoSe2HS under tensile strain are well observed. The first-principles calculations by using density functional theory reveals the PL peaks redshifts of IEXs and IAXs origin from bandgap shrinkage. The calculation results also show the Mo-4d states dominating conduction band minimum shifts of the ML MoSe2plays a dominant role in the redshifts of IEXs. This work provides new insights into understanding the tuning mechanism of tensile strain on IEXs and IAXs in two-dimensional (2D) HS, and paves a way to the development of flexible optoelectronic devices based on 2D materials.
Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Hongxia Zhong,Wenqi Xiong,Pengfei Lv,Jin Yu,Shengjun Yuan

DOI: https://doi.org/10.1103/physrevb.103.085124

IF: 3.7

2021-01-01

Physical Review B

Abstract:Very recently, a new type of two-dimensional layered material, MoSi2N4, was fabricated that is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate the effect of vertical strain on the electronic structure of MA(2)Z(4) (M = Ti/Cr/Mo, A = Si, Z = N/P) bilayers. Taking bilayer MoSi2N4 as an example, our first-principles calculations show that its indirect band gap decreases monotonically as the vertical compressive strain increases. Under a critical strain around 22%, it undergoes a transition from semiconductor to metal. We attribute this to the opposite energy shift of states in different layers, which originates from the built-in electric field induced by the asymmetric charge transfer between two inner sublayers near the interface. Similar semiconductor to metal transitions are observed in other strained MA(2)Z(4) bilayers, and the estimated critical pressures to realize such transitions are within the same order as semiconducting transition metal dichalcogenides. The semiconductor to metal transitions in the family of MA(2)Z(4) bilayers present interesting possibilities for strain-induced engineering of their electronic properties.
Dirac-like Band Structure and Strain-Tunable Electronic Structure of Zr2CCl2 Monolayer

Xianghui Duan,Nan Sun,Luqian Fu,Baozeng Zhou,Xiaocha Wang

DOI: https://doi.org/10.1016/j.apsusc.2021.151931

IF: 6.7

2021-01-01

Applied Surface Science

Abstract:Two dimensional MXenes is a general term for transition metal carbides and their derivatives. Different MXenes materials have attracted much attention due to their unique electronic properties, which have the potential applications in spintronic devices. With the synthesis of two dimensional Zr-containing materials, the related two dimensional Zr MXenes materials have gradually been paid more attention, so theoretical research based on first principles has also been enriched. In this paper, the electronic structure of the two dimensional MX Zr2C material after adsorption of Cl functional groups at different symmetrical positions on both sides is studied systematically by using the density functional theory. The bare Zr2C is a metal with magnetism, while the Zr2CCl2 structure becomes a non-magnetic metal. Three adsorption structures of Zr2CCl2 have been studied. The Zr2CCl2-I monolayer is the most stable structure, but the Zr2CCl2-II monolayer is the only unstable structure among the three structure. Additionally, a Dirac-like structure with a tiny gap appears in Zr2CCl2-III monolayer, where the position of gap can be further tailored by biaxial strain. As the compressive strain increases, the Dirac-like will move up. Moreover, at a compressive strain of -0.9%, the Dirac-like structure of Zr2CCl2-III will move to the Fermi level with an indirect-band-gap of 7.3 meV. At the same time, considering the influence of SOC, its band gap value will become 29.3 meV. The Dirac-like structure with a band gap also makes up for the shortcoming of graphene's zero band gap. And Zr2C with different functional groups has different electronic properties, since Zr2C MXenes have potential applications in electronic devices.
Strain-tunable electronic and optical properties of Zr2CO2 MXene and MoSe2 van der Waals heterojunction: A first principles calculation

Xiao-Hong Li,Xing-Hao Cui,Cai-Hong Xing,Hong-Ling Cui,Rui-Zhou Zhang

DOI: https://doi.org/10.1016/j.apsusc.2021.149249

IF: 6.7

2021-05-01

Applied Surface Science

Abstract:Zr2CO2/MoS2 heterostructure has attracted intensive attention because of its remarkable electronic and optoelectronic properties. In this paper, the van der Waals (vdW) heterostructures are constructed by stacking MoSe2 on top of Zr2CO2 MXene. The most stable stacking configuration is confirmed. Zr2CO2 and MoSe2 monolayers can form type II heterostructure, and the interfacial electronic states coupling between Zr2CO2 and MoSe2 is responsible for gap states. The effect of strain on the electronic structure and optical properties of Zr2CO2/MoS2 heterostructure is investigated theoretically. The manner in which the strain modulates the band structure of Zr2CO2/MoS2 heterostructure, including band gap, total/partial density of state, charge transfer is reported. The compressive and tensile strains can all result in the metallization of Zr2CO2/MoSe2 heterostructure. The increasing amount of charge redistribution results in the transition from semiconductor to metal with the increasing compressive and tensile strain. The photocatalytic efficiency of Zr2CO2/MoSe2 heterostructure is generally enhanced under strain. The effect of strain on optical properties is further explored.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Tailoring the electronic, mechanical, and carrier transport properties of 1T‐SnS 2 monolayer via strain engineering: A first-principles study

Jingyi Zhang,Shulin Bai,Da Wan,Dongming Luo,Mengxiu Wu,Xiaodong Li,Shuwei Tang

DOI: https://doi.org/10.1016/j.mtcomm.2023.107636

IF: 3.8

2023-11-27

Materials Today Communications

Abstract:Two-dimensional metal dichalcogenides have garnered significant interest in the realm of electronic applications on account of their tunable electronic structures and high carrier mobility. Utilizing first-principles calculations and deformation potential (DP) theory, a comprehensive investigation on the electronic, mechanical, and carrier transport properties of 1T-SnS 2 monolayer under strain engineering is investigated in this work. The 1T-SnS 2 monolayer emerges as energetically stable within an applied equal-biaxial strain interval of −8% to 8%, satisfying Born's criterion for the elastic constants and thus manifesting remarkable mechanical stability. The lattice parameter, bond length, bond angle, and bandgap dynamically respond to the applied equal-biaxial strain. The band structure calculated using generalized gradient approximation (GGA) and spin-orbit coupling (SOC) of the 1 T-SnS 2 monolayer demonstrates the characteristic of an indirect bandgap semiconductor, accompanied by tunable bandgap under strain engineering. Additionally, the carrier transport properties of 1T-SnS 2 monolayer under strain engineering are also evaluated on the basis of DP theory, and a pronounced anisotropy is discovered in the effective mass, carrier relaxation time, and carrier mobility along the x - and y -direction. Notably, the application of a strain of −4% and 4% on the 1T-SnS 2 monolayer has resulted in high electron mobility of 6233.21 cm 2 /V·s and hole mobility of 1195.62 cm 2 /V·s. Our present work not only underscores the substantial influence of strain engineering on the electronic, mechanical, and carrier transport properties of 1 T-SnS 2 monolayer but also provides critical insights into the strain-based tuning of two-dimensional metal dichalcogenides for electronics and optoelectronics.

materials science, multidisciplinary
Tuning the Electrical Conductivity of Ti2CO2 MXene by Varying the Layer Thickness and Applying Strains

Yaqing Zhang,Xian-Hu Zha,Kan Luo,Nianxiang Qiu,Yuhong Zhou,Jian He,Zhifang Chai,Zhengren Huang,Qing Huang,Yunxiao Liang,Shiyu Du

DOI: https://doi.org/10.1021/acs.jpcc.8b10888

2019-01-01

Abstract:MXenes have attracted intensive attention because of their widespread applications. As a well-studied member of the MXene family, Ti2CO2 has been demonstrated to be semiconducting with ultrahigh carrier mobility, acting as a candidate material for electronic devices. In this work, the influence of layer thickness on the electrical conductivity of Ti2CO2 is investigated combined with first-principles density functional calculations and the Boltzmann transport theory. Because of the layer interaction-induced band splitting, the band gap of Ti2CO2 generally decreases with increasing layers. Based on the generalized gradient approximation, the band gap in monolayer Ti2CO2 is determined to be 0.260 eV, which decreases to 0.0369 eV in the five-layer configuration. Further, the strain influence on the electronic structure of the multilayer Ti2CO2 is studied. With increasing compression strains perpendicular to the basal plane, the configuration is found to transform from a semiconductor to a semimetal, then to a semiconductor, and at last to a metal. This result implies that the electronic property of the multilayer Ti2CO2 can be efficiently manipulated by strain and that the multilayer configurations could be applied in strain sensors. Moreover, our work may open a door to realize bulk semiconductors through compression of accordion-like multilayer MXenes.
Using strain to alter the energy bands of the monolayer MoSe2: A systematic study covering both tensile and compressive states

Xuerui Cheng,Liying Jiang,Yuanyuan Li,Huanjun Zhang,Chuansheng Hu,Shiyu Xie,Miao Liu,Zeming Qi

DOI: https://doi.org/10.1016/j.apsusc.2020.146398

IF: 6.7

2020-08-01

Applied Surface Science

Abstract:Understanding the interplay between the strain effect, optical property and electronic structure of a two-dimensional is important, especially for the atomic-thin semiconductors as it has important implication on developing straintronic devices. In this work, we investigate the interplay between strain effects and the electronic structure as well as the lattice vibrational modes of monolayer MoSe2 across a wide-range of the strain from the tension all the way to the compression, using in situ Raman and photoluminescence (PL) spectroscopy as well as density functional calculations. Over the entire strain range, its direct bandgap gradually decreases when the strain changes from compression to tension. In particular, a strain-induced direct-to-indirect transition is observed at compressive strain of -1.3%. Such transition is originated from the opposite movement of conduction band at K, Λ points under strain. When the monolayer is under a tensile strain, unlike the compressive case, the movement of the valence bands plays a major role in causing a K−Γ crossover when the tensile strain reaches 3.3%. It indicates that the electronic structure of monolayer MoSe2 can be fine tuned across a wide strain range.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Tuning the electronic structures and transport coefficients of Janus PtSSe monolayer with biaxial strain

San-Dong Guo,Xiao-Shu Guo,Ye Deng

DOI: https://doi.org/10.1063/1.5124677

2019-08-01

Abstract:Due to their great potential in electronics, optoelectronics and piezoelectronics, Janus transition metal dichalcogenide (TMD) monolayers have attracted increasing research interest, the MoSSe of which with sandwiched S-Mo-Se structure has been synthesized experimentally. In this work, the biaxial strain dependence of electronic structures and transport properties of Janus PtSSe monolayer is systematically investigated by using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC). Calculated results show that SOC has a detrimental effect on power factor of PtSSe monolayer, which can be understood by considering SOC effects on energy bands near the Fermi level. With $a/a_0$ from 0.94 to 1.06, the energy band gap firstly increases, and then decreases, which is due to the position change of conduction band minimum (CBM). It is found that compressive strain can increase the strength of conduction bands convergence by changing relative position of conduction band extrema (CBE), which can enhance n-type $ZT_e$ values. Calculated results show that compressive strain can also induce the flat valence bands around the $\Gamma$ point near the Fermi level, which can lead to high Seebeck coefficient due to large effective masses, giving rise to better p-type $ZT_e$ values. The calculated elastic constants with $a/a_0$ from 0.94 to 1.06 all satisfy the mechanical stability criteria, which proves that the PtSSe monolayer is mechanically stable in the considered strain range. Our works further enrich studies of Janus TMD monolayers, and can motivate farther experimental works.

Materials Science,Mesoscale and Nanoscale Physics
First-Principles Study of Structural and Electronic Properties of Monolayer PtX2 and Janus PtXY (X, Y = S, Se, and Te) via Strain Engineering

Xun Ge,Xiaohao Zhou,Deyan Sun,Xiaoshuang Chen

DOI: https://doi.org/10.1021/acsomega.2c07271

IF: 4.1

2023-02-03

ACS Omega

Abstract:In this work, the structural parameters and electronic properties of PtX2 and Janus PtXY (X, Y = S, Se, and Te) are studied based on the density functional theory. The phonon spectra and the Born criteria of the elastic constant of these six monolayers confirm their stability. All PtX2 and Janus PtXY monolayers show an outstanding stretchability with Young's modulus ranging from 61.023 to 82.124 N/m, about one-fifth that of graphene and half that of MoS2, suggesting highly flexible materials. Our first-principles calculations reveal that the pristine PtX2 and their Janus counterparts are indirect semiconductors with their band gap ranging from 0.760 to 1.810 eV at the Perdew-Burke-Ernzerhof level (1.128-2.580 eV at the Heyd-Scuseria-Ernzerhof level). By applying biaxial compressive and tensile strain, the electronic properties of all PtX2 and Janus PtXY monolayers are widely tunable. Under small compressive strain, PtX2 and Janus PtXY structures remain indirect semiconductors. PtTe2, PtSeTe, and PtSTe monolayers undergo a semiconducting to metallic transition when the strain reaches -6, -8, and -10%, respectively. Interestingly, there is a transition from the indirect semiconductor to a quasi-direct one for all PtX2 and Janus PtXY monolayers when the tensile strain is applied.
Theoretical Study on the Electrical and Mechanical Properties of MXene Multilayer Structures Through Strain Regulation

Yaqing Zhang,Xian-Hu Zha,Kan Luo,Yanqing Qin,Xiaojing Bai,Jian Xu,Cheng-Te Lin,Qing Huang,Shiyu Du

DOI: https://doi.org/10.1016/j.cplett.2020.137997

IF: 2.719

2020-01-01

Chemical Physics Letters

Abstract:Since it has been shown that the electronic properties of the multilayer Ti2CO2 can be efficiently manipulated by strain and that the multilayer configurations could be applied in strain sensors, more MXene materials deserve further investigations based on their excellent performance and a wide range of potential applications. In this work, the theoretical study on the electronic characteristics of different MXene multilayer structures under strains is carried out using first principles calculations. The calculation results show that Ti2CF2 and Ti2C(OH)(2) remains metallic under different strains, and thus the oxygen terminated Ti2C MXene might be more suitable for application in pressure sensing devices. Moreover, strain stress curves and electronic structures under strains are calculated. From the results, the conversion from semiconductors to metals for Hf2CO2 and Zr2CO2 is determined to be allowed under compressive strains. Therefore, the current in a device can be more readily controlled using Hf2CO2 and Zr2CO2 than Nb2CO2 and V2CO2 under pressures in an appropriate range. It is expected that the current study can provide new clues for expanding the potential applications of MXenes such as in pressure sensors and flexible electronic devices.
Electronic properties of monolayer copper selenide with one-dimensional moiré patterns

Gefei Niu,Jianchen Lu,Jianqun Geng,Shicheng Li,Hui Zhang,Wei Xiong,Zilin Ruan,Yong Zhang,Boyu Fu,Lei Gao,Jinming Cai

DOI: https://doi.org/10.48550/arXiv.2211.02916

2022-11-05

Abstract:Strain engineering is a vital way to manipulate the electronic properties of two-dimensional (2D) materials. As a typical representative of transition metal mono-chalcogenides (TMMs), a honeycomb CuSe monolayer features with one-dimensional (1D) moiré patterns owing to the uniaxial strain along one of three equivalent orientations of Cu(111) substrates. Here, by combining low-temperature scanning tunneling microscopy/spectroscopy (STM/S) experiments and density functional theory (DFT) calculations, we systematically investigate the electronic properties of the strained CuSe monolayer on the Cu(111) substrate. Our results show the semiconducting feature of CuSe monolayer with a band gap of 1.28 eV and the 1D periodical modulation of electronic properties by the 1D moiré patterns. Except for the uniaxially strained CuSe monolayer, we observed domain boundary and line defects in the CuSe monolayer, where the biaxial-strain and strain-free conditions can be investigated respectively. STS measurements for the three different strain regions show that the first peak in conduction band will move downward with the increasing strain. DFT calculations based on the three CuSe atomic models with different strain inside reproduced the peak movement. The present findings not only enrich the fundamental comprehension toward the influence of strain on electronic properties at 2D limit, but also offer the benchmark for the development of 2D semiconductor materials.

Materials Science
Manipulation of Electronic and Magnetic Properties of Cr2CX2 (X= F,O,OH) Monolayer by Applying Mechanical Strains

Qian Sun,Zhaoming Fu,Yi Li,Zongxian Yang

DOI: https://doi.org/10.1016/j.jallcom.2020.156769

IF: 6.2

2021-01-01

Journal of Alloys and Compounds

Abstract:Adjusting the electronic and magnetic properties of materials by strain engineering is an effective strategy to improve the performance of electronic and spin electronic devices. In this paper, we study the electronic and magnetic properties of Cr2C and Cr2CX2 (X = F, O,OH) under mechanical strain based on density functional theory. In the strain-free state, Cr2C and Cr2CO2 are in the ferromagnetic (FM) metallic ground states, while Cr2CF2 and Cr2C(OH)(2) are in the antiferromagnetic (AFM) semiconducting states. Applying tensile strain can enhance the magnetic moments of the Cr atoms of all the Cr2C and Cr2CX2 (X = F, O, OH) systems. The electronic structure can also be affected with the increase of strain, e.g., resulting in narrowing of the band gap of the AFM semiconducting systems (Cr2CF2 and Cr2C(OH)(2)) and enhancing the spin-splitting of the FM metallic systems (Cr2C and Cr2CO2). The results indicate a possible broadened applicability of strained Cr2C-based MXenes in future spintronics. (C) 2020 Elsevier B.V. All rights reserved.
Tunable Electronic Properties of Novel 2D Janus MSiGeN4 (M = Ti, Zr, Hf) Monolayers by Strain and External Electric Field

Vo T.T. Vi,Tran P.T. Linh,Cuong Q. Nguyen,Nguyen N. Hieu

DOI: https://doi.org/10.1002/adts.202200499

2022-09-21

Advanced Theory and Simulations

Abstract:First‐principles calculations are performed to study the structural, elastic, and electronic properties of novel two‐dimensional Janus MSiGeN4 (M = Ti, Zr, and Hf) monolayers. MSiGeN4monolayers are structurally stable and they are indirect semiconductors with superior electronic properties. The electronic characteristics of Janus MSiGeN4 monolayers depend strongly on a biaxial strain. Since the recent successful experimental synthesis of MoSi2N4 [Science, 369 (2020), 670], the "MA2Z4 family" has been of particular interest to the scientists in the field of materials science due to its outstanding physical properties. In this paper, the first‐principles calculations are performed to study the structural, elastic, and electronic properties of novel two‐dimensional (2D) Janus MSiGeN4 monolayers (M = Ti, Zr, Hf). The calculations of phonon spectra indicate that monolayers MSiGeN4 are dynamically stable and can be experimentally synthesized. The obtained Young's modulus and Poisson's ratio of the Janus structures MSiGeN4 are much larger than that of other binary 2D materials and meet the mechanical stability criteria suggested by Born and Huang. In the calculations using either PBE or HSE06 functionals, the Janus MSiGeN4 structures exhibit indirect semiconductor characteristics with larger band gaps than that of similar septuple‐atomic‐layer materials, such as MoSiGeN4 and WSiGeN4. In addition, the influences of biaxial strain and external electric field on the electronic structure of MSiGeN4 are investigated. It is found that the biaxial strain tunes the electronic characteristics more significantly than the external electric field. The obtained results can provide insights into novel Janus monolayers with potential applications in electronic devices.
Single layer of MX3 (M=Ti, Zr; X=S, Se, Te): a new platform for nano-electronics and optics

Yingdi Jin,Xingxing Li,Jinlong Yang

DOI: https://doi.org/10.48550/arXiv.1502.05108

2015-02-18

Materials Science

Abstract:A serial of two dimensional titanium and zirconium trichalcogenides nanosheets MX3 (M=Ti, Zr; X=S, Se, Te) are investigated based on first-principles calculations. The evaluated low cleavage energy indicates that stable two dimensional monolayers can be exfoliated from their bulk crystals in experiment. Electronic studies reveal very rich electronic properties in these monolayers, including metallic TiTe3 and ZrTe3, direct band gap semiconductor TiS3 and indirect band gap semiconductors TiSe3, ZrS3 and ZrSe3. The band gaps of all the semiconductors are between 0.57~1.90 eV, which implies their potential applications in nano-electronics. And the calculated effective masses demonstrate highly anisotropic conduction properties for all the semiconductors. Optically, TiS3 and TiSe3 monolayers exhibit good light absorption in the visible and near-infrared region respectively, indicating their potential applications in optical devices. In particular, the highly anisotropic optical absorption of TiS3 monolayer suggests it could be used in designing nano optical waveguide polarizers.
Strain dependent electronic and optical properties of PtS2 monolayer

Gang Liu,Yan Gan,Ruge Quhe,Pengfei Lu

DOI: https://doi.org/10.1016/j.cplett.2018.08.029

IF: 2.719

2018-01-01

Chemical Physics Letters

Abstract:•Our results elucidate the importance of strain engineering in controllably tuning the band gap of transition metal dichalcogenides (TMDs).•Mechanical strains reduce the band gap of monolayer PtS2, causing an indirect-to- direct band gap transition.•The optical properties were calculated and a clear red shift was observed with the increasing strain.
Strain Tunable Magnetism in SnX2 (X = S, Se) Monolayers by Hole Doping

Hui Xiang,Bo Xu,Yidong Xia,Jiang Yin,Zhiguo Liu

DOI: https://doi.org/10.1038/srep39218

IF: 4.6

2016-01-01

Scientific Reports

Abstract:By first-principles calculations, the magnetism of hole doped tin dichalcogenides SnX2 (X = S, Se) monolayers is systematically studied. It is found that a phase transition from nonmagnetic to ferromagnetic ground state appears once above the critical hole density (~1014 cm−2). The spin magnetic moment can maintain a magnitude of 1.0 μB/hole with excellent stability of ferromagnetic state. Furthermore, we demonstrate that strain is very useful to modulate the DOS near the valence band, resulting in the reduction of the critical hole density to ~1013 cm−2 when the strain reaches 4% (6%) in SnS2 (SnSe2), which can be realized in common field effect transistors. Moreover, the phonon dispersion calculations for the strained SnX2 monolayers indicate that they can keep the dynamical stability under the hole doping. Therefore, the strain tunable magnetic transition in hole doped tin dichalcogenides indicates their potential promising applications in spintronic devices.

Tunable Electronic Structures in Mpx3 (M = Zn, Cd; X = S, Se) Monolayers by Strain Engineering

Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides

Exploring electronic features in monolayer and bilayer MX 2 (M = Hf, Zr; X = S, Se) structures under shear strain

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Tailoring the Electronic, Mechanical, and Carrier Transport Properties of 1t‐sns2 Monolayer Via Strain Engineering: A First-Principles Study

Unraveling the strain tuning mechanism of interlayer excitons in WSe2/MoSe2heterostructure

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Dirac-like Band Structure and Strain-Tunable Electronic Structure of Zr2CCl2 Monolayer

Strain-tunable electronic and optical properties of Zr2CO2 MXene and MoSe2 van der Waals heterojunction: A first principles calculation

Tailoring the electronic, mechanical, and carrier transport properties of 1T‐SnS 2 monolayer via strain engineering: A first-principles study

Tuning the Electrical Conductivity of Ti2CO2 MXene by Varying the Layer Thickness and Applying Strains

Using strain to alter the energy bands of the monolayer MoSe2: A systematic study covering both tensile and compressive states

Tuning the electronic structures and transport coefficients of Janus PtSSe monolayer with biaxial strain

First-Principles Study of Structural and Electronic Properties of Monolayer PtX2 and Janus PtXY (X, Y = S, Se, and Te) via Strain Engineering

Theoretical Study on the Electrical and Mechanical Properties of MXene Multilayer Structures Through Strain Regulation

Electronic properties of monolayer copper selenide with one-dimensional moiré patterns

Manipulation of Electronic and Magnetic Properties of Cr2CX2 (X= F,O,OH) Monolayer by Applying Mechanical Strains

Tunable Electronic Properties of Novel 2D Janus MSiGeN4 (M = Ti, Zr, Hf) Monolayers by Strain and External Electric Field

Single layer of MX3 (M=Ti, Zr; X=S, Se, Te): a new platform for nano-electronics and optics

Strain dependent electronic and optical properties of PtS2 monolayer

Strain Tunable Magnetism in SnX2 (X = S, Se) Monolayers by Hole Doping