A first-principles study of electronic and optical properties of the tetragonal phase of monolayer ZnS modulated by biaxial strain

Bin Liu,Wan-Sheng Su,Bi-Ru Wu

DOI: https://doi.org/10.1039/d1ra08043a

IF: 4.036

2022-01-01

RSC Advances

Abstract:The evolution of electronic property for monolayer tetragonal ZnS under biaxial strain.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Weiqing Zhou,Alexander N. Rudenko,Shengjun Yuan

DOI: https://doi.org/10.1002/aelm.201900860

IF: 6.2

2019-01-01

Advanced Electronic Materials

Abstract:Optical properties of nodal‐line semimetal ZrSiS are studied using first‐principles calculations. Frequency‐independent optical conductivity is a fingerprint of the infrared optical response in ZrSiS. It is found that this characteristic feature is robust with respect to uniaxial compressive strain of up to 10 GPa, yet with the flat region being narrowed with increasing strain. Upon uniaxial tensile stress of 2 GPa, the Fermi surface undergoes a Lifshitz transition accompanied by a weakening of the interband screening, which reduces the spectral weight of infrared excitations. It is also shown that the high‐energy region is characterized by low‐loss plasma excitations at ≈20 eV with essentially anisotropic dispersion. Strongly anisotropic dielectric properties suggest the existence of a hyperbolic regime for plasmons in the deep ultraviolet range. Although the frequencies of high‐energy plasmons are virtually unaffected by external uniaxial deformation, their dispersion can be effectively tuned by strain.
Tailoring the structural and electronic properties of graphene-like ZnS monolayer using biaxial strain

Harihar Behera,Gautam Mukhopadhyay

DOI: https://doi.org/10.48550/arXiv.1305.6895

2013-05-29

Mesoscale and Nanoscale Physics

Abstract:Our First-principles Full-Potential Density Functional Theory (DFT) calculations show that a monolayer of ZnS (ML-ZnS), which is predicted to adopt a graphene-like planar honeycomb structure with a direct band gap, undergoes strain-induced modifications in its structure and band gap when subjected to in-plane homogeneous biaxial strain ($\delta$). ML-ZnS gets buckled for compressive strain greater than 0.92%; the buckling parameter $\Delta$ (= 0.00 \AA\, for planar ML-ZnS) linearly increases with increasing compressive strain ($\Delta = 0.435$ \AA \,at $\delta = - 5.25$%). A tensile strain of 2.91% turns the direct band gap of ML-ZnS into indirect. Within our considered strain values of $|\delta| < 6%$, the band gap shows linearly decreasing (non-linearly increasing as well as decreasing) variation with tensile (compressive) strain. These predictions may be exploited in future for potential applications in strain sensors and other nano-devices such as the nano-electromechanical systems (NEMS).
Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations

Yan Li,Jun Kang,Jingbo Li

DOI: https://doi.org/10.1039/c3ra46090h

IF: 4.036

2014-01-01

RSC Advances

Abstract:The elastic, electronic and optical properties of the ZrS2 monolayer and the effects of different kinds of in-plane strains on its electronic structure are investigated using first-principles method. By analyzing the strain–energy relationship we show that the ZrS2 monolayer has a Poisson's ratio of 0.22 and an in-plane stiffness of 75.74 N m−1. The band structures of the ZrS2 monolayer calculated using both generalized gradient approximation and hybrid functional present an indirect band gap feature. The optical properties of the ZrS2 monolayer exhibit strong anisotropy. In the low-energy region, the perpendicular dielectric function dominates while in the high-energy range both perpendicular and parallel polarizations contribute. Moreover, strain has significant influence on the band structure. It is found that the band gap of the ZrS2 monolayer can be continuously modified from zero to 2.47 eV always with an indirect band gap under symmetrical strain in the elastic regime. Remarkably, an indirect-to-direct band gap transition has been observed when the uniaxial strain is applied to the monolayer along either the zigzag or armchair directions.

chemistry, multidisciplinary
First-Principles Study on the Effect of Strain on Single-Layer Molybdenum Disulfide

Chen Chong,Hongxia Liu,Shulong Wang,Kun Yang

DOI: https://doi.org/10.3390/nano11113127

IF: 5.3

2021-11-19

Nanomaterials

Abstract:By adopting the first-principles plane wave pseudopotential method based on density functional theory, the electronic structure properties of single-layer MoS2 (molybdenum disulfide) crystals under biaxial strain are studied. The calculation results in this paper show that when a small strain is applied to a single-layer MoS2, its band structure changes from a direct band gap to an indirect band gap. As the strain increases, the energy band still maintains the characteristics of the indirect band gap, and the band gap shows a linear downward trend. Through further analysis of the density of states, sub-orbital density of states, thermodynamic parameters and Raman spectroscopy, it revealed the variation of single-layer MoS2 with strain. This provides a theoretical basis for realizing the strain regulation of MoS2.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Ting Cheng,Congwei Tan,Shuqing Zhang,Teng Tu,Hailin Peng,Zhirong Liu

DOI: https://doi.org/10.1021/acs.jpcc.8b05475

IF: 4.177

2018-01-01

The Journal of Physical Chemistry

Abstract:A new type of two-dimensional layered semiconductor with weak electrostatic but not van der Waals interlayer interactions, Bi2O2Se, has been recently synthesized, which shown excellent air stability and ultrahigh carrier mobility. Herein, we combined theoretical and experimental approaches to study the Raman spectra of Bi2O2Se and related bismuth oxychalcogenides (Bi2O2Te and Bi2O2S). The experimental peaks were fully consistent with the calculated results, and were successfully assigned. Bi2O2S was predicted to have more Raman-active modes due to its lower symmetry. The shift of the predicted frequencies of Raman active modes was also found to get softened as the interlayer interaction decreases from bulk to monolayer Bi2O2Se and Bi2O2Te. To reveal the strain effects on the Raman shifts, a universal theoretical equation was established based on the symmetry of Bi2O2Se and Bi2O2Te. It was predicted that the doubly degenerate modes split under in-plane uniaxial/shear strains. Under a rotated uniaxial strain, the changes of Raman shifts are anisotropic for degenerate modes although Bi2O2Se and Bi2O2Te were usually regarded as isotropic systems similar to graphene. This implies a novel method to identify the crystallographic orientation from Raman spectra under strain. These results have important consequences for the incorporation of 2D Bismuth oxychalcogenides into nanoelectronic devices.
Tailoring the electronic, mechanical, and carrier transport properties of 1T‐SnS 2 monolayer via strain engineering: A first-principles study

Jingyi Zhang,Shulin Bai,Da Wan,Dongming Luo,Mengxiu Wu,Xiaodong Li,Shuwei Tang

DOI: https://doi.org/10.1016/j.mtcomm.2023.107636

IF: 3.8

2023-11-27

Materials Today Communications

Abstract:Two-dimensional metal dichalcogenides have garnered significant interest in the realm of electronic applications on account of their tunable electronic structures and high carrier mobility. Utilizing first-principles calculations and deformation potential (DP) theory, a comprehensive investigation on the electronic, mechanical, and carrier transport properties of 1T-SnS 2 monolayer under strain engineering is investigated in this work. The 1T-SnS 2 monolayer emerges as energetically stable within an applied equal-biaxial strain interval of −8% to 8%, satisfying Born's criterion for the elastic constants and thus manifesting remarkable mechanical stability. The lattice parameter, bond length, bond angle, and bandgap dynamically respond to the applied equal-biaxial strain. The band structure calculated using generalized gradient approximation (GGA) and spin-orbit coupling (SOC) of the 1 T-SnS 2 monolayer demonstrates the characteristic of an indirect bandgap semiconductor, accompanied by tunable bandgap under strain engineering. Additionally, the carrier transport properties of 1T-SnS 2 monolayer under strain engineering are also evaluated on the basis of DP theory, and a pronounced anisotropy is discovered in the effective mass, carrier relaxation time, and carrier mobility along the x - and y -direction. Notably, the application of a strain of −4% and 4% on the 1T-SnS 2 monolayer has resulted in high electron mobility of 6233.21 cm 2 /V·s and hole mobility of 1195.62 cm 2 /V·s. Our present work not only underscores the substantial influence of strain engineering on the electronic, mechanical, and carrier transport properties of 1 T-SnS 2 monolayer but also provides critical insights into the strain-based tuning of two-dimensional metal dichalcogenides for electronics and optoelectronics.

materials science, multidisciplinary
Tailoring the Electronic, Mechanical, and Carrier Transport Properties of 1t‐sns2 Monolayer Via Strain Engineering: A First-Principles Study

Jingyi Zhang,Shulin Bai,Da Wan,Dongming Luo,Mengxiu Wu,Xiaodong Li,Shuwei Tang

DOI: https://doi.org/10.1016/j.mtcomm.2023.107636

IF: 3.8

2024-01-01

Materials Today Communications

Abstract:Two-dimensional metal dichalcogenides have garnered significant interest in the realm of electronic applications on account of their tunable electronic structures and high carrier mobility. Utilizing first-principles calculations and deformation potential (DP) theory, a comprehensive investigation on the electronic, mechanical, and carrier transport properties of 1T-SnS2 monolayer under strain engineering is investigated in this work. The 1T-SnS2 monolayer emerges as energetically stable within an applied equal-biaxial strain interval of -8% to 8%, satisfying Born's criterion for the elastic constants and thus manifesting remarkable mechanical stability. The lattice parameter, bond length, bond angle, and bandgap dynamically respond to the applied equal-biaxial strain. The band structure calculated using generalized gradient approximation (GGA) and spin-orbit coupling (SOC) of the 1 T-SnS2 monolayer demonstrates the characteristic of an indirect bandgap semiconductor, accompanied by tunable bandgap under strain engineering. Additionally, the carrier transport properties of 1T-SnS2 monolayer under strain engineering are also evaluated on the basis of DP theory, and a pronounced anisotropy is discovered in the effective mass, carrier relaxation time, and carrier mobility along the x- and y-direction. Notably, the application of a strain of -4% and 4% on the 1T-SnS2 monolayer has resulted in high electron mobility of 6233.21 cm2/V & sdot;s and hole mobility of 1195.62 cm2/V & sdot;s. Our present work not only underscores the substantial influence of strain engineering on the electronic, mechanical, and carrier transport properties of 1 T-SnS2 monolayer but also provides critical insights into the strain-based tuning of two-dimensional metal dichalcogenides for electronics and optoelectronics.
First-Principle Study of Strain-Driven Phase Transition in Incipient Ferroelectric Srtio3

Lihong Ni,Yong Liu,Chenlu Song,Wei Wang,Gaorong Han,Yankai Ge

DOI: https://doi.org/10.1016/j.physb.2011.08.018

2011-01-01

Abstract:First-principle calculations were carried out to investigate the epitaxial strain dependence of the structural stability and related properties of SrTiO3. The P4mm-to-P4/mmm-to-Amm2 phase transitions in SrTiO3 with the epitaxial strain changing from compressive to expansive have been identified by analysis of the soft-mode eigendisplacement. The zero-temperature critical strains for the P4mm-to-P4/mmm and P4/mmm-to-Amm2 phase transitions are −0.72% and 0.83%, respectively, which is consistent with the previous predictions based on the phenomenological thermodynamic model and the parameterized total-energy model. The influences of the epitaxial strain on the dielectric tensor and spontaneous polarization along the phase transition path are discussed in terms of charge transfer. Further investigations on the vibration modes show unusual softening behaviors of the A1 and B2 modes in the Amm2 phase, which may be associated with the soft phonon modes away from Γ point and possibly result in other phase transitions unreported by any previous studies.
Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides

Huating Liu,Zongyu Huang,Chaoyu He,Yanbing Wu,Lin Xue,Chao Tang,Xiang Qi,Jianxin Zhong

DOI: https://doi.org/10.1063/1.5041486

IF: 2.877

2019-02-28

Journal of Applied Physics

Abstract:We studied the structures and electronic properties of Janus transition-metal dichalcogenide monolayers MXY (M = Mo, W; X ≠ Y = S, Se, Te) by first-principles calculations. The results of the electronic band structures and the density of states reveal that all of the MXY monolayers show semiconducting characteristics. Particular attention has been focused on the bandgap engineering by applying in-plane biaxial compressive and tensile strain. It is observed that the bandgap values of the MXY monolayers decrease with the increase of strain degree under the tension and compression biaxial strain, and a semiconductor-to-metal transition can be undergone at a critical value of strain. The possibility of the tunable energy gap over a wide range makes MXY monolayers potential candidates for nanoelectronics and optoelectronics.

physics, applied
Strain-Tuned Structural, Mechanical and Electronic Properties of Two-Dimensional Transition Metal Sulfides ZrS2: A First Principles Study1

Qi Song,Xin Liu,Hui Wang,Xiaoting Wang,Yuxiang Ni,Hongyan Wang

DOI: https://doi.org/10.21203/rs.3.rs-810582/v1

2021-09-20

Abstract:Abstract Two-dimensional semiconductor material zirconium disulfide (ZrS 2 ) monolayer is a new promising material with good prospects for nanoscale applications. Recently, a new zirconium disulfide (ZrS 2 ) monolayer with a space group of 59_ Pmmn has been successfully predicted. Using first-principles calculations, this new monolayer ZrS 2 structure is obtained with stable indirect band gaps of 0.65 eV and 1.46 eV at the DFT-PBE (HSE06) functional levels, respectively. Strain engineering studies on ZrS 2 monolayer show effective band gap modulation. The bandgap shows a linear regularity from narrow to wide under applied stresses (strain ranged from − 6% to + 8%). Young's modulus of elasticity of ZrS 2 rectangular cells along the tensile directions ( x -axis and y -axis) is 83.63 (N/m) and 63.61 (N/m) with Poisson's ratios of 0.09 and 0.07, respectively. The results of carrier mobility show that the electron mobility along the y -axis can reach 1.32×10 3 cm 2 V − 1 s − 1 . Besides, the order of magnitude of the light absorption coefficient in the ultraviolet spectral region is calculated to reach 2.0×10 5 cm −1 for ZrS 2 monolayers. Moreover, by regulating the bandgap under stress, some bandgaps of the stretched energy band exceed the free energy of 1.23 eV and possess a suitable energy band edge position. The results indicates that the new two-dimensional Pmmn -ZrS 2 monolayer is a potential material for photovoltaic devices and photocatalytic water decomposition.
Ab-initio Study of Electronic and Lattice Dynamical Properties of monolayer ZnO under Strain

Saumen Chaudhuri,A. K. Das,G. P. Das,B. N. Dev

DOI: https://doi.org/10.1007/s11664-022-09938-4

2023-08-01

Abstract:First-principles density functional theory based calculations have been performed to investigate the strain-induced modifications in the electronic and vibrational properties of monolayer (ML) ZnO. Wide range of in-plane tensile and compressive strains along different directions are applied to analyse the modifications in detail. The electronic band gap reduces under both tensile and compressive strains and a direct to indirect band gap transition occurs for high values of biaxial tensile strain. The relatively low rate of decrease of band gap and large required strain for direct to indirect band gap transition compared to other $2$D materials are analysed. Systematic decrease in the frequency of the in-plane and increase in the out-of-plane optical phonon modes with increasing tensile strain are observed. The in-plane acoustic modes show linear dispersion for unstrained as well as strained cases. However, the out-of-plane acoustic mode (ZA), which shows quadratic dispersion in the unstrained condition, turns linear with strain. The dispersion of the ZA mode is analysed using the shell elasticity theory and the possibility of ripple formation with strain is analysed. The strain-induced linearity of the ZA mode indicates the absence of rippling under strain. Finally, the stability limit of ML-ZnO is investigated and found that for $18\%$ biaxial tensile strain the structure shows instability with the emergence of imaginary phonon modes. Furthermore, the potential of ML-ZnO to be a good thermoelectric material is analyzed in an intuitive way based on the calculated electronic and phononic properties. Our results, thus, not only highlight the significance of strain-engineering in tailoring the electronic and vibrational properties but also provide a thorough understanding of the lattice dynamics and mechanical strength of ML-ZnO.

Materials Science
Strain-tuned mechanical, electronic, and optoelectronic properties of two-dimensional transition metal sulfides ZrS2: a first-principles study

Qi Song,Xin Liu,Hui Wang,Xiaoting Wang,Yuxiang Ni,Hongyan Wang

DOI: https://doi.org/10.1007/s00894-022-05052-8

IF: 2.172

2022-02-18

Journal of Molecular Modeling

Abstract:Two-dimensional semiconductor material zirconium disulfide (ZrS2) monolayer is a new promising material with good prospects for nanoscale applications. Recently, a new zirconium disulfide (ZrS2) monolayer with a space group of 59_Pmmn has been successfully predicted. Using first-principles calculations, this new monolayer ZrS2 structure is obtained with stable indirect bandgaps of 0.65 eV and 1.46 eV at the DFT-PBE (HSE06) functional levels, respectively. Strain engineering studies on the ZrS2 monolayer show effective bandgap modulation. The bandgap shows a nearly linear regularity from narrow to wide under strain (ranged from − 6 to + 8%). Young’s modulus of elasticity of ZrS2 along the tensile directions (x-axis and y-axis) is 83.63 (N/m) and 63.61 (N/m) with Poisson’s ratios of 0.09 and 0.07, respectively. The results of carrier mobility show that the electron mobility along the y-axis can reach 1.32 × 103 cm2 V−1 s−1. Besides, the order of magnitude of the light absorption coefficient in the ultraviolet spectral region is calculated to reach 2.0 × 105 cm−1 for ZrS2 monolayers. Moreover, the bandgap and band edge position of Pmmn-ZrS2 can satisfy the redox potentials of photocatalytic water splitting by strain regulating. The results indicate that the new two-dimensional Pmmn-ZrS2 monolayer is a potential material for photovoltaic devices and photocatalytic water decomposition.Graphical abstract

chemistry, multidisciplinary,biochemistry & molecular biology,biophysics,computer science, interdisciplinary applications
Engineering the Near-Edge Electronic Structure of Snse Through Strains

Yabei Wu,Weiyi Xia,Weiwei Gao,Wei Ren,Peihong Zhang

DOI: https://doi.org/10.1103/physrevapplied.8.034007

IF: 4.6

2017-01-01

Physical Review Applied

Abstract:The discovery of the unprecedented figure of merit ZT of SnSe has sparked a large number of studies on the fundamental physics of this material and further improvement through guided materials design and optimization. Motivated by its rich chemical-bonding characters, unusual multivalley electronic structure, and the sensitivity of the band-edge states to lattice strains, we carry out accurate quasiparticle calculations for the low-temperature phase SnSe under strains. We illustrate how the band-edge states can be engineered by lattice strains, including the size and the nature of the band gap, the positions of the band extrema in the Brillouin zone, and the control of the number of electron and/or hole valleys. The distinct atomic origin and orientation of the wave functions of the different band-edge states dictates the relative shift in their band energy, enabling active control of the near-edge electronic structure of this material. Our work demonstrates that strain engineering is a promising way to manipulate the low-energy electronic structure of SnSe, which can have profound influences on the optical and transport properties of this material.
Electronic structure and magnetism manipulation of non-metal-doped monolayer chromium disulfide under strain

Huaidong Liu,Lu Yang,Yanshen Zhao,Shihang Sun,Xingbin Wei

DOI: https://doi.org/10.1007/s11224-024-02318-0

2024-04-08

Structural Chemistry

Abstract:The effects of planar biaxial strain on the stability, electronic structure, and magnetic properties of monolayer CrS 2 systems doped with nitrogen group elements have been investigated based on first principles. Calculations of energy differences, formation energies, bond population, and binding energies indicate the relative stability of the system. Calculations of the electronic structure (energy band structure, density of states, and differential charge density distribution) and magnetic parameters (spin density profiles, single-atom magnetic moments, and total magnetic moments of the system) show that atomic doping in conjunction with strain induces several excellent electronic properties of the system, such as magnetic semiconductors and semimetals. The bandgap of the spin-down channel increases with tensile strain and decreases with compressive strain. In addition, we note that the total magnetic moments of the monolayer CrS 2 system and the N atom-doped system decrease with tensile strain and show an increase with compressive strain. The above results provide a reference for further investigation of this material and its application in nanospin devices.

chemistry, multidisciplinary, physical,crystallography
First-principles investigation on electronic structure, magnetic states and optical properties of Mn-doped SnS2 monolayer via strain engineering

Anwar Ali,Jian-Min Zhang,Iltaf Muhammad,Ismail Shahid,Iftikhar Ahmad,Majeed Ur Rehman,Iqtidar Ahmad,Fazal Kabir

DOI: https://doi.org/10.1016/j.physe.2021.114842

2021-10-01

Abstract:Two-dimensional magnetic materials are high desirable for realizing advanced optoelectronic and spintronic devices. In this paper, we report systematic studies the effects of strain on the electronic structure, magnetic states and optical properties of Mn-doped SnS2 monolayer (ML) by means of first-principles calculations. Ab-initio molecular dynamics simulations and formation energy reveal that the Mn-doped SnS2 ML is stable at 500 K and can be fabricated under the S-rich condition. The substitution of a Mn for a Sn atom induces 3 μB magnetic moment in nonmagnetic SnS2 ML, which is consistent with the Hund's rule and Aufbau principle. Based on classical Heisenberg model and mean-field approximation the Curie temperature is calculated to be 476.13 K. Due to symmetry reserved crystal structure, the net magnetic moment of Mn-doped SnS2 ML is robust even if considerable strains (−10 to 10%) are applied. The blue-shift and red-shift of the absorption peaks are observed in the optical spectrum by biaxial compressive and tensile strains. The biaxial strain effectively improves the optical properties of Mn-doped SnS2 ML, particularly in the visible light region. This study provide useful guidance for practical application in magnetic and optoelectronic devices.
Effect of biaxial strain on the electronic structure and optical properties of two-dimensional Bi 2 Te 2 S

Jieyu Yang,Weifu Cen,Zean Tian

DOI: https://doi.org/10.1088/1402-4896/ad56cc

2024-06-13

Physica Scripta

Abstract:In this work, the effects of biaxial strain on the electronic structure and optical properties of monolayer Bi2Te2S are studied by the first-principles methods. The calculated results show that the monolayer Bi2Te2S is an indirect band gap semiconductor with a band gap of 1.0 eV. The absence of imaginary frequency in the phonon spectrum indicates that the structure can exist stably. With the increase of tensile strain, the band gap value decreases approximately quasi-linearly. When 10 % tensile strain is applied, the band gap value is reduced to 0eV, achieving the transition from an indirect bandgap semiconductor to a direct bandgap semiconductor. With the increase of compressive strain, the band gap value increases first and then decreases. And the band gap value reaches a maximum of 1.28 eV at -4 % strain. Combined with the density of states analysis, the reason for this change in the band structure is that the contribution of Bi 6p, Te 5p and S 3p state electrons to the conduction band and valence band changes under different strains. The effect of strain on the optical properties shows that when different strains are applied, the monolayer Bi2Te2S has a high absorption coefficient in the entire visible region. The single-layer Bi2Te2S material has a smaller refractive index under tensile strain. The static dielectric function value increases with the increase of tensile strain, and the peak value of the dielectric function decreases and moves to the low energy direction. This indicates that the tensile strain will enhance the migration of photogenerated electron-hole pairs, which is beneficial to improving the utilization of light. This work will provide a theoretical reference for the subsequent study of the electronic and optical properties of monolayer Bi2Te2S.

physics, multidisciplinary
Strain Engineering in Novel Α-Sbp Binary Material with Tensile-Robust and Compress-Sensitive Band Structures

Ying Shu,Zongyu Huang,Huating Liu,Yujie Liao,Fei Liu,Xiang Qi,Jianxin Zhong

DOI: https://doi.org/10.1016/j.physe.2021.114623

IF: 3.369

2021-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Antimony phosphorus in the alpha phase (alpha-SbP) is a novel two-dimensional binary material with suitable band gap and environmental stability, it has attracted attention for its promising applications in the field of optoelectronics. In this work, the electronic and optical properties of alpha-SbP monolayer under biaxial strain have been studied by first principles calculation method based on density functional theory. It is found that when the tensile strain is applied, the band gap value of monolayer SbP increases firstly and then decreases under tensile strain, but the whole band gap value fluctuated is controlled within 0.08 eV. However, in the process of applying compressive strain, the band gap value decreases linearly with the strain value, and semiconductor-metal transition occurs at about -5% strain value. This is due to the difference in coupling between Sb and P atoms. Its optical properties under different strains are analyzed in detail, and it is found that the optical properties of SbP changed little under tensile strain, the light absorption peak is mainly concentrated in the ultraviolet region. In contrast, the compressive strain significantly adjust the optical properties of SbP. The innovation of this work is that the optoelectronic properties of SbP are studied by means of biaxial strain regulation. We find that the optoelectronic properties of SbP are robust to tensile strain. On the other hand, compressive strain has a significant effect on the photoelectric properties of SbP, and semiconductor-metal phase transition occurs. The research work in this paper provides theoretical support for the applications of monolayer alpha-SbP as a robust tensile and flexible compression material in optoelectronic nanodevices.
Biaxial strain modulation of the optoelectronic properties of F-doped defective monolayer SnS2

Mengting Ma,Guili Liu,Zhonghua Yang,Guoying Zhang

DOI: https://doi.org/10.1088/1402-4896/ad36f9

2024-03-24

Physica Scripta

Abstract:The first principles approach calculates the geometrical structure, stability, and optoelectronic properties of F-atom doped S vacancy defective SnS2 systems under biaxial tensile and compressive deformation. The calculations show that all systems can be formed stably, and defects and F doping cause a tiny increase in the average bond length of the systems. The formation of defects converts an indirect bandgap system into a direct one. Substitutional doping of F atoms transforms the SnS2 structure into a p-type semiconductor. The doped system's valence band mainly originates from S-3p orbitals, Sn-5p orbitals, and F-2p orbitals. The conduction bands mainly originate from the S-3p, Sn-5s, and F-2p orbitals. The absorption and reflection peaks of the doped system with applied strain are blueshifted at the maximum peak. The biaxial compressive strain increases the band gap and decreases the doped system's refractive index and extinction coefficient. The biaxial tensile strain increases the band gap of the doped system, the hybridization of the valence band of the system is enhanced, the conductivity of the real part of the complex dielectric function of the system is increased, and the refractive index of the system is elevated. The biaxial stretching strain can better change the sensitivity of the F-doped system to visible light.

physics, multidisciplinary
Anisotropic strain effect on structural and electronic properties in WSe2/ZnO mixed-dimensional heterostructure

Xinxin Wang,Wenyu Shi,Jun Wu,Jianguo Wan

DOI: https://doi.org/10.1016/j.apsusc.2021.149378

IF: 6.7

2021-06-01

Applied Surface Science

Abstract:Mixed-heterostructures have received much attention due to their broader application in functional devices. Here, we investigate the strain effect on structural and electronic properties of 2D WSe2/1D ZnO nanoribbon (WSe2/ZnO-NR) mixed-dimensional heterostructure including the armchair ZnO nanoribbon (a-ZnO-NR) and zigzag ZnO nanoribbon (z-ZnO-NR) on WSe2 layer by using the first principles calculation. The results show that the binding strength of WSe2/ZnO-NR is enhanced. Remarkably, the WSe2/ZnO-NR presents anisotropic electronic properties under strain effect. Firstly, whether the WSe2/a-ZnO-NR is passivated by hydrogens or not, they always show type-I direct band gap alignment. After the strain applied, the band structures are transformed into type-II band alignment, promoting the separation of photogenerated electron-hole pairs. For WSe2/z-ZnO-NR, it exhibits type-II band alignment. The strain engineering can effectively modulate the band gap of WSe2/z-ZnO-NR. When the edge of z-ZnO-NR is not passivatied, the WSe2/z-ZnO-NR shows spin polarized band structure with a narrow gap. The band gap and spin polarization can be tuned by strain. The projected band structures reveal that the WSe2/z-ZnO-NR not only forms type-II band alignment, but also realizes the separation of different spin states. This work provides useful guide for designing photoelectronic devices experimentally.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Mechanics and strain engineering of bulk and monolayer Bi2O2Se

Zhenqian Pang,Teng Li

DOI: https://doi.org/10.1016/j.jmps.2021.104626

IF: 5.582

2021-12-01

Journal of the Mechanics and Physics of Solids

Abstract:High-mobility semiconductive ultrathin films of bismuth oxyselenide (Bi2O2Se) have attracted great interest due to their potential applications in advanced electronic and photoelectronic devices. Enthusiasm aside, future success of such applications hinges upon the fundamental understanding of two dimensional (2D) Bi2O2Se, which is far from mature. In particular, unlike many other 2D materials with a van der Waals gap, 2D Bi2O2Se features a weak electrostatic stacking interaction, which gives rise to a significantly different mechanical response. The unique mechanical response of 2D Bi2O2Se has a strong influence on its band gap, a critical property toward its device applications. Here, using ab initio calculations, we investigate the mechanical and electronic responses of both bulk and monolayer Bi2O2Se under uniaxial and biaxial tension as well as those of monolayer Bi2O2Se under in-plane shearing. The distinct mechanical responses of bulk and monolayer Bi2O2Se under different mechanical deformation are explained by the associated study of the evolution of electron localization function and charge density analysis. We reveal that the band gap of both bulk and monolayer Bi2O2Se decreases as the applied tensile strain increases. The critical uniaxial and biaxial tensile strains, above which bulk and monolayer Bi2O2Se transform from being semiconductive to being metallic, are determined. These findings suggest fertile yet largely unexplored opportunities of strain engineering of 2D Bi2O2Se toward new device applications.

mechanics,materials science, multidisciplinary,physics, condensed matter

A first-principles study of electronic and optical properties of the tetragonal phase of monolayer ZnS modulated by biaxial strain

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Tailoring the structural and electronic properties of graphene-like ZnS monolayer using biaxial strain

Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations

First-Principles Study on the Effect of Strain on Single-Layer Molybdenum Disulfide

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Tailoring the electronic, mechanical, and carrier transport properties of 1T‐SnS 2 monolayer via strain engineering: A first-principles study

Tailoring the Electronic, Mechanical, and Carrier Transport Properties of 1t‐sns2 Monolayer Via Strain Engineering: A First-Principles Study

First-Principle Study of Strain-Driven Phase Transition in Incipient Ferroelectric Srtio3

Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides

Strain-Tuned Structural, Mechanical and Electronic Properties of Two-Dimensional Transition Metal Sulfides ZrS2: A First Principles Study1

Ab-initio Study of Electronic and Lattice Dynamical Properties of monolayer ZnO under Strain

Strain-tuned mechanical, electronic, and optoelectronic properties of two-dimensional transition metal sulfides ZrS2: a first-principles study

Engineering the Near-Edge Electronic Structure of Snse Through Strains

Electronic structure and magnetism manipulation of non-metal-doped monolayer chromium disulfide under strain

First-principles investigation on electronic structure, magnetic states and optical properties of Mn-doped SnS2 monolayer via strain engineering

Effect of biaxial strain on the electronic structure and optical properties of two-dimensional Bi 2 Te 2 S

Strain Engineering in Novel Α-Sbp Binary Material with Tensile-Robust and Compress-Sensitive Band Structures

Biaxial strain modulation of the optoelectronic properties of F-doped defective monolayer SnS2

Anisotropic strain effect on structural and electronic properties in WSe2/ZnO mixed-dimensional heterostructure

Mechanics and strain engineering of bulk and monolayer Bi2O2Se