High-efficient Four-Mode Si-SiN Interlayer Coupler with Dual Polarizations

Yu Wan,Boai Liu,Rui Wu,Yingjie Liu

DOI: https://doi.org/10.1109/icocn59242.2023.10236113

2023-01-01

Abstract:A compact four-mode Si-SiN interlayer coupler with dual polarizations is proposed. The coupler has a low transmission loss of 0.05-0.73 dB and exhibits high fabrication tolerance from 1450 nm to 1650 nm.

What problem does this paper attempt to address?

Broadband Polarization-Independent Directional Coupler Using Asymmetric-Waveguides

Qinghuan Xu,Jifang Tao,Chonglei Sun,Jia Zhao,Zuojia Wang,Liuge Du,Xun Li

DOI: https://doi.org/10.1109/jphot.2019.2950572

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:A high-performance broadband polarization-independent directional coupler is designed by using asymmetric-waveguides configuration on a silicon-on-insulator platform. Through the design of cascaded directional couplers, the coupling characteristics of the light with the orthogonally polarized transverse electric (TE) and transverse magnetic (TM) can be manipulated, so that the coupling strength could be equivalent between TE and TM polarizations within an ultra-broadband. Couplers with 50% splitting ratio are designed and simulated for operating in the wavelength range from 1450 nm to 1650 nm for both polarizations. Within the 100 nm wavelength range from 1500 nm to 1600 nm, the deviations of splitting ratio for TE polarization and TM polarization are ±3.3% and ±6.2%, respectively. And within the 200 nm wavelength range from 1450 nm to 1650 nm, the deviations for TE polarization and TM polarization are ±9.0% and ±7.8%, respectively. The footprint of this polarization-independent directional coupler is only 21 μm × 1.6 μm.
Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Xiaoyan Liu,Lin Han,Xiaoke Ruan,Tao Chu

DOI: https://doi.org/10.1364/OL.494537

IF: 3.6

2023-01-01

Optics Letters

Abstract:We demonstrated a SiN-SiN-Si three-layer silicon waveguide crossing with low-loss crossings and interlayer couplers. The underpass and overpass crossings exhibited ultralow loss (< 0.82/1.16 mdB) and cross talk (<-56/-48 dB) in the wave-length range of 1260-1340 nm. To reduce the loss and length of the interlayer coupler, a parabolic interlayer coupling structure was adopted. The measured interlayer coupling loss was less than 0.11 dB from 1260 to 1340 nm, which is, to the best of our knowledge, the lowest loss reported for an interlayer coupler based on a SiN-SiN-Si three-layer plat-form. The total interlayer coupler length was only 120 & mu;m.& COPY; 2023 Optica Publishing Group
High-efficiency Wideband SiNx-on-SOI Grating Coupler with Low Fabrication Complexity.

Pengfei Xu,Yanfeng Zhang,Zengkai Shao,Lin Liu,Lidan Zhou,Chunchuan Yang,Yujie Chen,Siyuan Yu

DOI: https://doi.org/10.1364/ol.42.003391

IF: 3.6

2017-01-01

Optics Letters

Abstract:The chip-fiber grating coupler is a fundamental building block in integrated photonics, providing convenient on-wafer testing and packaging. Couplers based on a silicon nitride (SiNx) material platform can achieve wider bandwidths than silicon-based couplers, but suffer from lower efficiency due to the relative low material refractive index. The efficiency of the SiNx grating coupler can be improved by using high-reflectivity silicon grating reflectors underneath. However, such a silicon grating reflector requires several fabrication steps, including lithography, etching, high precision alignment (HPA), and chemical mechanical polishing (CMP). In this Letter, we demonstrate an easy-to-fabricate SiNx-on-SOI transverse-electric mode grating coupler requiring only one patterning step (grating alone), and without the need for HPA and CMP. A coupling coefficient of -2.5 dB and 1-dB-bandwidth of 65 nm has been experimentally measured.
High-Performance Vertical Interlayer Coupler for Multilayer Silicon Nitride-on-Silicon Photonic Platform

Xin Mu,Sailong Wu,Lirong Cheng,Xin Tu,H. Y. Fu

DOI: https://doi.org/10.1109/group4.2019.8925686

2019-01-01

Abstract:We propose a vertical interlayer coupler for optical interconnections in multilayer silicon nitride-on-silicon photonic circuits with coupling efficiency of 96.0%. The coupler has a compact size of 170 μm in length and exhibits high performance in an ultra-broad bandwidth.
Tri-layer Gradient and Polarization-Selective Vertical Couplers for Interlayer Transition.

Ningfeng Bai,Xiaotao Zhu,Yijun Zhu,Wei Hong,Xiaohan Sun

DOI: https://doi.org/10.1364/oe.397543

IF: 3.8

2020-01-01

Optics Express

Abstract:We demonstrate and optimize a tri-layer vertical coupler for a silicon nitride (Si3N4) multilayer platform operating at a 2 µm band. The large spacing between the topmost and bottommost layers of a gradient structure enables ultra-low crossing loss and interlayer crosstalk without affecting the efficiency interlayer transition. We achieve a 0.31 dB transition loss, ultra-low multi-layer crosstalk of -59.3 dB at a crossing angle of 90° with an interlayer gap of 2300 nm at 1950nm. With width optimization of this structure, the fabrication tolerances toward lateral misalignment of two stages in this coupler have increased 61% and 56%, respectively. We also propose a vertical coupler, based on this design, with mode selectivity and achieve an extinction ratio of < 15 dB for wavelengths in the 1910-1990 range. Meanwhile, a multi-layer interlaced AWGs centered at 1950nm and based on vertical coupler has been demonstrated. The proposed vertical couplers exhibit potential for application in large-scale photonic-integrated circuits and broadly in photonic devices.
SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Jia Xu Brian Sia,Wanjun Wang,Xin Guo,Jin Zhou,Zecen Zhang,Xiang Li,Zhong Liang Qiao,Chong Yang Liu,Callum Littlejohns,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/jphot.2019.2952603

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935--1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.
CMOS-Compatible Ultralow-Loss Three-Step Silicon Edge Coupler with Substrate Substitution in the Whole Communication Band

Zhen Wang,Jin Zhang,Lei Zhang,Xiaoke Ruan,Weijie Tang,Tao Chu

DOI: https://doi.org/10.3390/mi14010066

IF: 3.4

2022-01-01

Micromachines

Abstract:Edge coupler is a key component of silicon-based optoelectronic chips, which dramatically reduces the coupling loss between fibers and transmission waveguides. Here, we propose an ultralow-loss three-step silicon edge coupler based on a 130 nm CMOS process. By replacing the silicon substrate with a material with a lower refractive index than silicon oxide, the silicon leakage loss and polarization-dependent loss can be significantly improved. This structure avoids the existence of a cantilever, which enhances the mechanical strength of the edge coupler. Coupling with standard single-mode fiber, the simulation results demonstrate that the TE/TM mode has an ultralow loss of 0.63/1.08 dB at 1310 nm and 0.57/1.34 dB at 1550 nm, and the 0.5 dB bandwidth covering the entire communication band is about 400 nm. In the entire communication band, the polarization-dependent loss is less than 0.8 dB. Furthermore, we propose a taper shape design method based on mode analysis, which can be adapted for any taper to improve its compactness. Compared with the parabolic shape, the coupling loss of the edge coupler with a length of 460 μm for the TE mode is improved by 0.3 dB on average, this edge coupler provides a feasible solution for fiber-to-chip coupling and is perfectly suitable for wavelength division multiplexing applications in optical communications.
Broad-band Efficient Edge Couplers for Compact Silicon Photonic Circuits

Yunfei Fu,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu,Qingbo Li

DOI: https://doi.org/10.1364/iont.2012.if2a.6

2012-01-01

Abstract:CMOS-compatible broad-band and efficient edge couplers are presented in this paper. The couplers are based on SiON ridge waveguides and silicon inverted tapers, no requirement on partially etching in fabrication processes. The measured coupling losses of ~ 2dB are proved with the calculation results, the broad-band range of more than 100nm range.
SiNx-Si Interlayer Coupler Using a Gradient Index Metamaterial

Pengfei Xu,Yanfeng Zhang,Shuailong Zhang,Yujie Chen,Siyuan Yu

DOI: https://doi.org/10.1364/ol.44.001230

IF: 3.6

2019-01-01

Optics Letters

Abstract:In this work, we demonstrate a metamaterial (MM)-based SiNx-Si interlayer coupler. A gradient index (GRIN) MM was employed to achieve refractive index matching, balancing the large difference in the refractive index between Si (∼3.42) and SiNx (∼2). In addition, a two-layer SiNx interlayer coupler was proposed to further minimize the coupling loss and interlayer crosstalk. Finally, we demonstrated a three-dimensional (3D) SiNx-Si interlayer coupler with the -0.6 dB insertion loss per layer propagation, with the 40 nm 1-dB-bandwidth (1530-1570 nm) and <-45 dB interlayer crosstalk. These promising results demonstrate the great potential of a GRIN MM-based SiNx-Si interlayer coupler in 3D photonic integration.
High-efficiency Grating Coupler Based on Fast Directional Optimization and Robust Layout Strategy in 130 Nm CMOS Process.

Xiangyu Luo,Guangcan Mi,Yanbo Li,Tao Chu

DOI: https://doi.org/10.1364/ol.452054

IF: 3.6

2022-01-01

Optics Letters

Abstract:We experimentally demonstrated a high-efficiency grating coupler by combining an interleaved etch and apodized structure for fiber-to-chip coupling. The grating coupler was optimized using the fast directional optimization method to achieve apodization. The grating coupler utilized a layout strategy involving an extended mask to avoid alignment errors for a multi-etch structure. The coupling efficiency was measured to be -2.2 dB at a wavelength of 1549 nm with a 3 dB bandwidth of 47 nm. The grating coupler, having no gold reflector, subwavelength index matching structure, or additional material layers, was fabricated using a commercial silicon photonics process with a minimum feature size of 140 nm. This grating coupler design provides a robust and effective coupling scheme and the proposed method can be employed to adopt the design in accordance with standard foundry design rules.
Compact broadband silicon 3 dB coupler based on shortcuts to adiabaticity.

Defen Guo,Tao Chu

DOI: https://doi.org/10.1364/OL.43.004795

IF: 3.6

2018-01-01

Optics Letters

Abstract:We proposed and experimentally demonstrated a compact, broadband, and low-loss-mode-evolution-based 2 x 23 dB coupler on a silicon-on-insulator platform. The waveguide widths and separations of the coupler were tapered in an optimal manner using the shortcuts to the adiabaticity method. The coupler, with a similar to 70 mu m total length and 200 nm feature size, exhibited <0.3 dB measured excess loss over a broadband wavelength range from 1500 to 1600 nm. Balanced and unbalanced Mach-Zehnder interferometers fabricated for validation showed extinction ratios larger than 27 and 23 dB, respectively, over a 100 nm bandwidth. The extracted splitting ratio was between 0.48 and 0.52. (C) 2018 Optical Society of America
Fabrication-friendly High-Efficiency Silicon Nitride Grating Coupler

Pengfei Xu,Yanfeng Zhang,Zengkai Shao,Lin Liu,Lidan Zhou,Chunchuan Yang,Yujie Chen,Siyuan Yu

DOI: https://doi.org/10.1109/cleopr.2017.8118727

2017-01-01

Abstract:Grating coupler, as one of the key components can provide convenient on-wafer testing and packaging for integrated photonics. Silicon nitride (SiNx) grating coupler suffers from lower efficiency due to the relative low material refractive index. The efficiency of SiNx grating coupler can be improved by using high reflectivity silicon grating reflectors underneath. However, such silicon grating reflector requires several fabrication steps, including lithography, etching, high precision alignment (HPA), and chemical mechanical polishing (CMP). In this work, we demonstrate an easy-to-fabricate SiNx grating coupler only requiring a single patterning step without the need of HPA and CMP. A coupling coefficient of -2.5 dB and 1-dB-bandwidth of 65 nm have been experimentally measured.
Interlayer Slope Waveguide Coupler for Multilayer Chalcogenide Photonics

Ye Luo,Chunlei Sun,Hui Ma,Maoliang Wei,Jialing Jian,Chuyu Zhong,Junying Li,Renjie Tang,Zequn Chen,Kathleen A. Richardson,Hongtao Lin,Lan Li

DOI: https://doi.org/10.3390/photonics9020094

IF: 2.536

2022-01-01

Photonics

Abstract:The interlayer coupler is one of the critical building blocks for optical interconnect based on multilayer photonic integration to realize light coupling between stacked optical waveguides. However, commonly used coupling strategies, such as evanescent field coupling, usually require a close distance, which could cause undesired interlayer crosstalk. This work presents a novel interlayer slope waveguide coupler based on a multilayer chalcogenide glass photonic platform, enabling light to be directly guided from one layer to another with a large interlayer gap (1 µm), a small footprint (6 × 1 × 0.8 µm3), low propagation loss (0.2 dB at 1520 nm), low device processing temperature, and a high bandwidth, similar to that in a straight waveguide. The proposed interlayer slope waveguide coupler could further promote the development of advanced multilayer integration in 3D optical communications systems.
Compact and Low-Loss 1 × 3 Polarization-Insensitive Optical Power Splitter Using Cascaded Tapered Silicon Waveguides

Hongxiang Li,Weiwei Chen,Pengjun Wang,Shixun Dai,Yuxiao Liu,Qiang Fu,Jun Li,Yan Li,Tingge Dai,Hui Yu,Jianyi Yang

DOI: https://doi.org/10.1364/ol.401036

2020-01-01

Abstract:In this Letter, a 1 × 3 polarization-insensitive optical power splitter based on cascaded tapered silicon waveguides is proposed and experimentally demonstrated on a silicon-on-insulator platform. By utilizing the particle swarm optimization algorithm and the finite difference time domain method, the structural parameters of the coupling regions are carefully designed to achieve polarization-insensitive property, compact size, low insertion loss, high uniformity, and broad bandwidth. The coupling length can be as short as 7.3 µm. Our measurement results show that, at 1550 nm, the insertion losses of the fabricated device operating in transverse electric (TE) and transverse magnetic (TM) polarizations are, respectively, 0.068 dB and 0.62 dB. Within a bandwidth from 1525 to 1575 nm, the insertion loss is lower than 0.82 dB and the uniformity is less than 1 dB for the fabricated device operating in TE polarization, while the fabricated device operating in TM polarization can have an insertion loss smaller than 1.50 dB and a uniformity lower than 1 dB from 1528 to 1582 nm.
Design and Fabrication of Multimode Interference Coupler with Strong Confinement Structure on Silicon-On-Insulator

YZ Tang,WH Wang,YM Wu,JY Yang,YL Wang

DOI: https://doi.org/10.1117/1.1804545

IF: 1.3

2004-01-01

Optical Engineering

Abstract:A 1x8 multimode interference coupler with a strong confinement structure in the multimode region was proposed and fabricated on silicon-on-insulator material. In the multimode region, the waveguide was etched to the buried silica layer so as to realize the strong confinement and obtain better resolution of the self-imaging effect, while in the input/output ports, the rib waveguides with the large cross-section rib structure were designed to satisfy the single-mode condition, with which the device could be efficiently coupled with single-mode fibers or other waveguide devices. The fabrication process was also specially designed to eliminate the photolithography alignment error. (C) 2004 Society of Photo-Optical Instrumentation Engineers.
Compact and efficient coupler to interface hybrid dielectric-loaded plasmonic waveguide with silicon photonic slab waveguide

rakesh g mote,hongson chu,ping bai,erping li

DOI: https://doi.org/10.1016/j.optcom.2012.04.037

IF: 2.4

2012-01-01

Optics Communications

Abstract:A coupler is proposed to interface a hybrid dielectric-loaded plasmonic waveguide (HDLPW) with a silicon photonic slab waveguide. The HDLPW is firstly designed and optimized to attain the best tradeoff between the mode confinement and the propagation distance. The designed coupler is inspired from the taper configuration and numerically modeled through finite-difference time-domain (FDTD) simulation. The results demonstrate that a high confinement and low loss of the energy is achieved from a silicon photonic slab waveguide into the dielectric slot of area 50×200nm2 in the HDLPW. The transmission attained through the coupler with a compact size of 400nm is found to be as high as 80% (1dB). Further, the planar nature of taper configuration makes the coupler easy to fabricate using the state-of-the-art CMOS facilities. The proposed coupler is useful in enabling the integration between photonic and hybrid plasmonic waveguides and thus realizing on-chip hybrid integrated circuits.
Ultra-compact Silicon Mode (de)multiplexer Based on Directional Couplers with Subwavelength Sidewall Corrugations

Xiaofei Wang,Nannan Ning,Hui Yu,Yuehai Wang,Jianyi Yang

DOI: https://doi.org/10.1364/ol.449493

2021-01-01

Abstract:Asymmetrical directional couplers aided with subwavelength sidewall corrugations are used to realize ultra-compact silicon mode (de)multiplexers at C-band. Three mode (de)multiplexers with ultra-short coupling lengths of 5.6/6.5/7.7 μm are designed to enable low-loss mode conversions between TE0 and TE1/2/3 modes. They are then cascaded to build a four-channel mode-division-multiplexing (MDM) link. The four mode channels present minimal on-chip insertion losses of 0.2/0.7/0.7/0.9 dB at their peak wavelengths. Measured cross talk levels of the four mode channels are better than -18.0/-19.1/-16.0/-18.2 dB within the wavelength range from 1530 nm to 1580 nm.
High-Efficiency and Polarization-Insensitive Grating Couplers on Thin-Film Lithium Niobate Waveguides

Haoyang Tan,Zhaoyang Chen,Bin Chen,Shiming Gao,Xiaowei Guan

DOI: https://doi.org/10.1364/cleo_at.2024.atu4m.1

2024-01-01

Abstract:We demonstrate polarization-insensitive grating couplers on thin-film lithium niobate waveguides. Inverse optimization method is used and the fabricated couplers exhibit efficiencies of - 6 dB for the TE mode and - 6.5 dB for the TM mode.
High-efficiency hybrid amorphous silicon grating couplers for sub-micron-sized lithium niobate waveguides.

Jian Jian,Pengfei Xu,Hui Chen,Mingbo He,Zeru Wu,Lidan Zhou,Lin Liu,Chunchuan Yang,Siyuan Yu

DOI: https://doi.org/10.1364/OE.26.029651

IF: 3.8

2018-01-01

Optics Express

Abstract:We demonstrate hybrid amorphous silicon uniform grating couplers for efficient coupling between the standard single-mode fiber and sub-micron lithium niobate waveguides. The grating couplers exhibit coupling efficiency of -3.06 dB and 1-dB bandwidth of 55 nm. The amorphous silicon grating couplers can also provide a universal building block applicable to other photonic platforms such as silicon nitride waveguides, whose moderate refractive index values prevent high efficiency grating couplers to be fabricated in the native waveguide. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
High Efficiency Grating Coupler for Coupling Between Single-Mode Fiber and SOI Waveguides

Zhang Can,Sun Jing-Hua,Xiao Xi,Sun Wei-Min,Zhang Xiao-Jun,Chu Tao,Yu Jin-Zhong,Yu

DOI: https://doi.org/10.1088/0256-307x/30/1/014207

2013-01-01

Chinese Physics Letters

Abstract:A high efficiency grating coupler between single-mode fiber and silicon-on-insulator waveguide is designed by a formula method. Over 78.5% coupling efficiency (>−1.05 dB) with 3 dB bandwidth about 50 nm for one grating coupler is obtained experimentally and this result is the highest one as far as we know. This grating coupler is CMOS compatible which needs only one etch-step and is designed for a standard SOI chip without any Bragg reflector or bottom reflector.

High-efficient Four-Mode Si-SiN Interlayer Coupler with Dual Polarizations

Broadband Polarization-Independent Directional Coupler Using Asymmetric-Waveguides

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

High-efficiency Wideband SiNx-on-SOI Grating Coupler with Low Fabrication Complexity.

High-Performance Vertical Interlayer Coupler for Multilayer Silicon Nitride-on-Silicon Photonic Platform

Tri-layer Gradient and Polarization-Selective Vertical Couplers for Interlayer Transition.

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

CMOS-Compatible Ultralow-Loss Three-Step Silicon Edge Coupler with Substrate Substitution in the Whole Communication Band

Broad-band Efficient Edge Couplers for Compact Silicon Photonic Circuits

SiNx-Si Interlayer Coupler Using a Gradient Index Metamaterial

High-efficiency Grating Coupler Based on Fast Directional Optimization and Robust Layout Strategy in 130 Nm CMOS Process.

Compact broadband silicon 3 dB coupler based on shortcuts to adiabaticity.

Fabrication-friendly High-Efficiency Silicon Nitride Grating Coupler

Interlayer Slope Waveguide Coupler for Multilayer Chalcogenide Photonics

Compact and Low-Loss 1 × 3 Polarization-Insensitive Optical Power Splitter Using Cascaded Tapered Silicon Waveguides

Design and Fabrication of Multimode Interference Coupler with Strong Confinement Structure on Silicon-On-Insulator

Compact and efficient coupler to interface hybrid dielectric-loaded plasmonic waveguide with silicon photonic slab waveguide

Ultra-compact Silicon Mode (de)multiplexer Based on Directional Couplers with Subwavelength Sidewall Corrugations

High-Efficiency and Polarization-Insensitive Grating Couplers on Thin-Film Lithium Niobate Waveguides

High-efficiency hybrid amorphous silicon grating couplers for sub-micron-sized lithium niobate waveguides.

High Efficiency Grating Coupler for Coupling Between Single-Mode Fiber and SOI Waveguides