Abstract:The deep ultraviolet (DUV) micro-light emitting diode (μLED) has serious electron leakage and low hole injection efficiency. Meanwhile, with the decrease in the size of the LED chip, the plasma-assisted dry etching process will cause damage to the side wall of the mesa, which will form a carrier leakage channel and produce non-radiative recombination. All of these will reduce the photoelectric performance of μLED. To this end, this study introduces polarized bulk charges into the hole supply layer (p-HSL) and the electron supply layer (n-ESL) respectively (dual-polarized structure) of the DUV μLED at an emission wavelength of 279 nm to enhance the binding of carriers and increase the injection efficiency of carriers. This is because the polarization-induced bulk charge can shield the polarized sheet charge on the interface and reduce the polarization electric field. The reduced polarization electric field in p-HSL can increase the effective barrier height of the conduction band in the p-type region and reduce the effective barrier height of the valence band. The decrease in the polarized electric field of n-HSL can reduce the thermal velocity of electrons, thereby enhancing the electron injection efficiency, reducing the Shockley-Read-Hall (SRH) recombination, and increasing the effective barrier height of the valence band. The study results indicate that the electron concentration and hole concentration of a μLED with dual polarization were increased by 77.93% and 93.6%, respectively. The optical power and maximum external quantum efficiency of μLED reached 31.04 W/cm2 and 2.91% respectively, and the efficiency droop is only 2.06% at 120 A/cm2. These results provide a new approach to solving the problem of insufficient carrier injection and SRH recombination in high-performance DUV μLEDs.

Demonstration of Weak Polarization Electric Field III-N LEDs Based on Polar Plane

Performance Enhancement of Nitrogen-Polar GaN-based Light-Emitting Diodes Prepared by Metalorganic Chemical Vapor Deposition

High efficient linearly polarized light emission from InGaN/GaN LED with patterned nanostructures

Polarization Of Edge Emission From Iii-Nitride Light Emitting Diodes Of Emission Wavelength From 395 To 455 Nm

Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes

Improving Modulation Bandwidth of C-Plane GaN-based Light-Emitting Diodes by an Ultra-Thin Quantum Wells Design.

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

Metasurface Integrated High Energy Efficient and High Linearly Polarized InGaN/GaN Light Emitting Diode.

Polarization Modulation at Last Quantum Barrier for High Efficiency AlGaN-Based UV LED

Demonstration of N-Polar III-Nitride Tunnel Junction LED

Orthogonally and linearly polarized green emission from a semipolar InGaN based microcavity

Polarization Modification In Ingan/Gan Multiple Quantum Wells By Symmetrical Thin Low Temperature-Gan Layers

III-Nitride Deep UV LED Without Electron Blocking Layer

Polarized GaN-based LED with an Integrated Multi-Layer Subwavelength Structure.

Dual polarization for efficient III-nitride-based deep ultraviolet micro-LEDs

Utilization of Polarization-Inverted Alingan or Relatively Thinner Algan Electron Blocking Layer in Ingan-Based Blue-Violet Laser Diodes

Characteristics Of Polarization-Doped N-Face Iii-Nitride Light-Emitting Diodes

High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes

Performance Improvement of Gan-Based Near-Uv Leds with Ingan/Algan Superlattices Strain Relief Layer and Algan Barrier

Nonpolar M-Plane Thin Film Gan and Ingan/Gan Light-Emitting Diodes on Lialo2(100) Substrates

Achieving High-Performance Blue GaN-Based Light-Emitting Diodes by Energy Band Modification on Al x In y Ga 1– x – y N Electron Blocking Layer