Polarized Emission From InGaN/GaN Single Nanorod Light-Emitting Diode

Ting Zhi,Tao Tao,Bin Liu,Zhe Zhuang,Jiangping Dai,Yi Li,Guogang Zhang,Zili Xie,Peng Chen,Rong Zhang
DOI: https://doi.org/10.1109/LPT.2015.2506184
IF: 2.6
2016-01-01
IEEE Photonics Technology Letters
Abstract:InGaN/GaN single nanorod (NR) light-emitting diodes (LEDs) have successfully been fabricated by nanoimprint lithography and focused ion beam-induced deposition. The current-voltage characteristics of single NR LEDs show low leakage current of 2 × 10-12 A at a reverse bias of -5 V and turn-ON voltage of ~3.8 V. Linear polarization-oriented parallel to the c-axis with a degree of ~50% was discovered...
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