A Dual-Output Picowatt Hybrid Voltage Reference with Digital Trimming Technique

Yilun Jin,Yuhang Zhang,Zhiwen Gu,Jian Zhao,Zhihong Luo,Yanhan Zeng,Yongfu Li

DOI: https://doi.org/10.1109/NEWCAS57931.2023.10198179

2023-01-01

Abstract:This paper presents a dual-output picowatt voltage reference in hybrid topology for ultra-low power IoT systems where multiple reference voltages are required. A digital trimming technique for two output voltages is investigated to compensate for process variations. A stacked structure of self-regulation native NMOS is implemented to improve PSRR and line sensitivity. The circuit is designed in a 180-nm CMOS process with a silicon area of 13,900 mu m(2). Untrimmed post-layout simulation results show that the circuit achieves two constant output voltages of 704.7 mV and 1146.5 mV with temperature coefficients of 92.2 ppm/degrees C and 38.2 ppm/degrees C, respectively, from 0 degrees C to 125 degrees C while consuming 278.9 pA. The low output voltage achieves a line sensitivity of 0.004%/V, a PSRR of -69.6 dB at 100 Hz, and a variation coefficient of 1.81%. The high output voltage achieves a line sensitivity of 0.003%/V, a PSRR of -67.2 dB at 100 Hz, and a variation coefficient of 0.46%.