A 2.5-nA Area-Efficient Temperature-Independent 176-/82-ppm/°C CMOS-Only Current Reference in 0.11-$μ$m Bulk and 22-nm FD-SOI

Martin Lefebvre,David Bol

DOI: https://doi.org/10.1109/JSSC.2024.3402960

2024-06-07

Abstract:Internet-of-Things (IoT) applications require nW-power current references that are robust to process, voltage and temperature (PVT) variations, to maintain the performance of IoT sensor nodes in a wide range of operating conditions. However, nA-range current references are rarely area-efficient due to the use of large gate-leakage transistors or resistors, which occupy a significant silicon area at this current level. In this paper, we introduce a nA-range constant-with-temperature (CWT) current reference, relying on a self-cascode MOSFET (SCM) biased by a four-transistor ultra-low-power voltage reference through a single-transistor buffer. The proposed reference includes a temperature coefficient (TC) calibration mechanism to maintain performance across process corners. In addition, as the proposed design relies on the body effect, it has been fabricated and measured in 0.11-$\mu$m bulk and 22-nm fully-depleted silicon-on-insulator (FD-SOI) to demonstrate feasibility in both technology types. On the one hand, the 0.11-$\mu$m design consumes a power of 16.8 nW at 1.2 V and achieves a 2.3-nA current with a line sensitivity (LS) of 2.23 %/V at 25°C and a TC of 176 ppm/°C at 1.2 V from -40 to 85°C. On the other hand, the 22-nm design consumes a power of 16.3 nW at 1.5 V and achieves a 2.5-nA current with a 1.53-%/V LS at 25°C and an 82-ppm/°C TC at 1.5 V from -40 to 85°C. Thanks to their simple architecture, the proposed references achieve a silicon area of 0.0106 mm$^2$ in 0.11 $\mu$m and 0.0026 mm$^2$ in 22 nm without compromising other figures of merit, and are thus competitive with state-of-the-art CWT references operating in the same current range.

Hardware Architecture

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: in Internet of Things (IoT) applications, how to design a current reference source in the nano - ampere (nA) range so that it can maintain stable performance under process, voltage and temperature (PVT) variations, while achieving high area efficiency and extremely low power consumption. Specifically, the paper focuses on developing a temperature - independent current reference (CWT current reference) that can operate under extremely low - power conditions and is robust to PVT variations.

### Problem Background

1. **Internet of Things (IoT) Requirements**:
- IoT sensor nodes are usually powered by batteries with limited capacity or energy harvesting, so the average power consumption is required to be in the range of 0.1 to 100 microwatts (µW).
- In the sleep mode, a bias current of about nano - ampere (nA) level is required to meet the strict power consumption limitations, and good performance can still be maintained in the active mode.

2. **Existing Challenges**:
- Current reference sources in the nA range usually occupy a large silicon area due to the use of large - gate - leakage transistors or resistors, resulting in low area efficiency.
- Existing solutions are either not highly area - efficient or cannot have good temperature stability at the same time.

3. **Objectives**:
- Design an area - efficient and temperature - independent current reference source that can maintain stable performance under different process corners.
- Achieve low power consumption, especially ultra - low power consumption (ULP) at the nA - level current.

### Solutions Proposed in the Paper

The paper proposes a current reference source based on self - cascaded MOSFET (SCM), which is biased by a four - transistor (4T) ultra - low - power voltage reference and transmits signals through a single - transistor buffer (1T buffer). The key innovative points of this design include:

1. **Temperature Coefficient (TC) Calibration Mechanism**:
- A TC calibration mechanism is introduced, which can adjust the temperature coefficient under different process corners to ensure stable performance.

2. **Body - Effect - Dependent Design**:
- The body effect of MOSFET is utilized, so that the design can be implemented in different technology types such as 0.11 µm bulk and 22 nm FD - SOI.

3. **Simplified Structure**:
- By simplifying the voltage reference generation and buffer circuits, the silicon area is reduced and the area efficiency is improved.

### Experimental Results

- **0.12 µm bulk design**:
- Power consumption: 16.8 nW
- Current: 2.3 nA
- Line sensitivity (LS): 2.23 %/V
- Temperature coefficient (TC): 176 ppm/°C
- Occupied area: 0.0106 mm²

- **22 nm FD - SOI design**:
- Power consumption: 16.3 nW
- Current: 2.5 nA
- Line sensitivity (LS): 1.53 %/V
- Temperature coefficient (TC): 82 ppm/°C
- Occupied area: 0.0026 mm²

Through these improvements, the current reference source proposed in the paper performs excellently in terms of area efficiency, temperature stability and power consumption, and can meet the requirements of IoT applications.