Abstract:In many applications, the ability of current references to cope with process, voltage, and temperature (PVT) variations is critical to maintaining system-level performance. However, temperature-independent current references operating in the nA range are rarely area-efficient due to the use of large resistors which occupy a significant silicon area at this current level. In this article, we introduce a nA-range constant-with-temperature (CWT) current reference relying on a self-cascode MOSFET (SCM), biased by a proportional-to-absolute-temperature (PTAT) voltage with a CWT offset. On the one hand, the proposed reference has been simulated post-layout in 65-nm bulk. This design consumes 5.4 nW at 0.7 V and achieves a 1.1-nA current with a line sensitivity (LS) of 0.69 %/V and a temperature coefficient (TC) of 213 ppm/$^\circ$C. On the other hand, the proposed reference has been simulated and fabricated in 22-nm fully depleted silicon-on-insulator (FDSOI). This second design requires additional features to mitigate the impact of parasitic diode leakage at high temperature. In measurement, it consumes 5.8 nW at 0.9 V and achieves a 0.9-nA current with a 0.39-%/V LS and a 565-ppm/$^\circ$C TC. As a result of using an SCM, the proposed references occupy a silicon area of 0.0021 mm$^2$ in 65 nm (respectively, 0.0132 mm$^2$ in 22 nm) at least 25$\times$ (respectively, 4$\times$) smaller than state-of-the-art CWT references operating in the same current range.

A resistorless CMOS current reference with temperature compensation

New Technique: A Low Drift Current Reference Based on PMOS Temperature Correction Technology.

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A New Cmos Current Reference with High Order Temperature Compensation

A Low Drift Curvature-Compensated Bandgap Reference with Trimming Resistive Circuit

A current reference based on bandgap technology with wide input voltage range by using 0.18µm BCD process

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An Untrimmed BJT-Based Temperature Sensor with Dynamic Current-Gain Compensation in 55-Nm CMOS Process

A Dynamic-Biased Resistor-Based CMOS Temperature Sensor with a Duty-Cycle-Modulated Output

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A High Order Temperature Compensation Current Reference with Extended Operating Temperature Range

CMOS Digital Temperature Sensor with Self-Correcting Technique

A Resistorless CMOS Voltage Reference Based on Mutual Compensation of $V_{T}$ and $v_{\rm TH}$

Current Reference with Low Temperature Drift and Low Power Supply

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A Temperature Independent Current Reference in Roic

A 0.85 V, 4.9 Ppm/°c Inherent Temperature Compensated Voltage Reference with −82 Db PSRR

A Low Power CMOS Voltage Reference Generator with Temperature and Process Compensation

A 30na Temperature-Independent CMOS Current Reference and Its Application in an LDO

Low-Temperature-Drift High PSRR CMOS Current Reference

A 1.1- / 0.9-nA Temperature-Independent 213- / 565-ppm/$^\circ$C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI