A High-PSRR and Curvature-Compensated Subthreshold Voltage Reference Without Special Devices or Resistors
Jingwu Gong,Suzhen Cheng,Nan Liu,Peng Ding,Zhizhen Yin,Zhanqiang Ru,Helun Song
DOI: https://doi.org/10.1109/icicm59499.2023.10366013
2023-01-01
Abstract:In this paper, a high power supply rejection ratio (PSRR) and curvature-compensated subthreshold voltage reference free of special devices and resistors is presented. The proposed voltage reference (VR) exhibits four excellent properties: high PSRR, low temperature coefficient (TC), reduced power consumption and compact layout area. By utilizing cascode current mirror, a decorrelating transistor, a low pass filter and a three-branch structure, both low and high frequencies present high PSRR. In order to reduce the TC of the VR, a proportional to absolute temperature (PTAT) current obtained from an inverse diode is added to an active load, thus achieving curvature compensation. Furthermore, the VR consists solely of MOSFETs, most of which operate in subthreshold region, so the VR occupies a very small area and consumes fairly low power. The proposed VR is designed in a standard TSMC 180 nm process and occupies 0.032 mm$^{2}$ active area. The simulation results demonstrate that the proposed VR operates desirably over a supply range of 1 V to 3.5 V with a line sensitivity of 0.047 %/V. The TC is 18.4 ppm$/^{\circ}\mathrm{C}$ with a temperature range of -$30 \sim 120$ only consuming a quiescent current around 46 nA, and the PSRR approximates -80 dB at 100 Hz, and -45 dB at 1 GHz owing to special circuit structures.