Abstract:A low-voltage all-metal oxide semiconductor (MOS) voltage reference with ultra-low power is presented to solve the problems of high supply voltage,high power consumption and large chip area in conventional band-gap references.The reference enforces all transistors to operate in the deep sub-threshold region through a voltage clamping technique,and the reference voltage is obtained by compensating the temperature characteristic of the thermal voltage with the difference of threshold voltages between two MOS transistors in sub-threshold region.Meanwhile,the linearity of the voltage reference and power supply rejection ratio are enhanced via negative feedback in the circuit,which is designed using the SMIC 0.18 μm complementary metal oxide semiconductor process.Simulation results show that the reference circuit is able to operate within 0.5-3.3 V voltage range of power supply with a linear regulation of 0.428％V-1,and the lowest power consumption is merely 0.41 nW.When the power supply voltage is 1.8 V in a temperature range from-40 to 125 ℃,the temperature coefficient is 4.53 × 10-6℃-1,the output voltage of the reference is 230 mV,and the power supply rejection ratio is-60 dB at 1 kHz frequency,while the layout area of the core circuit is only 625 μm2.The voltage reference can be used in the systems that require low voltage and low power consumption,such as implantable medical devices,wearable devices,and Internet of Things,etc.

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