Abstract:Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H+ implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 1016, 1 × 1017, or 2 × 1017 ion/cm2, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 1016 O atoms/cm2 situated at a depth close to that of the peak of the implanted H+. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its presence in the irradiation-damaged films.

Study in Mechanism of Hydrogen Retention by C - SiC Films with IR

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Hydrogen Resistance Property of Surface N~+ Implanting SiC Coating

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Measurement and Analysis of Composition and Depth Profile of H in Amorphous Si 1− X C X :H Films

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

High temperature annealing of hydrogenated amorphous silicon carbide thin films

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Nmr-Studies of Hydrogen Microstructures in Hydrogenated Amorphous-Silicon Films

Structural and optical properties of α-Si1-xCx:H thin films prepared by RF-PECVD

The Proton Magnetic Resonance Study for Hydrogen Behavior in Three Hydrogenated Silicon Films

Silicon Carbide Formation by Methane Plasma Immersion Ion Implantation into Silicon

Investigation of Microstructure and Nanoindentation Hardness of C+ & He+ Irradiated Nanocrystal SiC Coatings during Annealing and Corrosion

Study on the hydrogen barrier performance of the SiOC coating

Intercalation of hydrogen in the SiC/epitaxial graphene interface

Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates

Study on PECVD process and characteristics of SiCxNy:H film