Temperature Compensation for Charge Measurement of BESIII TOF Electronics

C. Q. Feng,Shubin Liu,Jinhong Wang,Qi An
2009-01-01
Abstract:A temperature compensation method using compensation-diode is described.It is designed for non-gated integrated circuitry for charge measurement of BESⅢ time of flight electronics.During a dynamic range of input signal amplitude from 200mV to 5000mV and temperature from 30℃ to 50℃,the temperature coefficient of charge measurement is about 0.6mV/℃,which is much better than the performance of a non-compensation circuitry and meets the requirement of BESⅢ project.
What problem does this paper attempt to address?