Abstract:Ferroelectric domain walls, recognized as distinct from the bulk in terms of symmetry, structure, and electronic properties, host exotic phenomena including conductive walls, ferroelectric vortices, novel topologies, and negative capacitance. Contrary to conventional understanding, our study reveals that the structure of domain walls in HfO2 closely resembles its bulk. First, our first-principles simulations unveil that the robust ferroelectricity is supported by bosonic pairing of all the anionic phonons in bulk HfO2. Strikingly, the paired phonons strongly bond with each other and successfully reach the center of the domain wall without losing their integrity and produce bulk-like domain walls. We then confirmed preservation of the bulk phonon displacements and consequently full revival of the bulk structure at domain walls via aberration-corrected STEM. The newly found duality between the bulk and the domain wall sheds light on previously enigmatic properties such as zero-energy domain walls, perfect Ising-type polar ordering, and exceptionally robust ferroelectricity at the sub-nm scales. The phonon-pairing discovered here is robust against physical boundaries such as domain walls and enables zero momentum and zero-energy cost local ferroelectric switching. This phenomenon demonstrated in Si-compatible ferroelectrics provides a novel technological platform where data storage on domain walls is as feasible as that within the domains, thereby expanding the potential for high-density data storage and advanced ferroelectric applications.

Erratum: Symmetry of Ferroelectric Switching and Domain Walls in Hafnium Dioxide [phys. Rev. B 106, 064104 (2022)]

Symmetry of Ferroelectric Switching and Domain Walls in Hafnium Dioxide

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

The atomic-scale domain wall structure and motion in HfO2-based ferroelectrics: A first-principle study

Effect of Dislocation Walls on the Polarization Switching of a Ferroelectric Single Crystal

Phonon-pair-driven Ferroelectricity Causes Costless Domain-walls and Bulk-boundary Duality

Correction: On-demand quantum spin Hall insulators controlled by two-dimensional ferroelectricity

Correction: Structure and Local Polar Domains of Dy-modified BiFeO3–PbTiO3 Multiferroic Solid Solutions

Erratum: Origin of Piezoelectric Response under a Biased Scanning Probe Microscopy Tip Across a 180∘ferroelectric Domain Wall [phys. Rev. B86, 134115 (2012)]

Ferroelectricity in Ultrathin Asymmetric Ferroelectric Tunnel Junctions: Vanishing Critical Thickness

Erratum to: Polymorphic phase transition in Superhydrous Phase B

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO$_2$

Erratum: High-spin and Charge-Ordering State Ofybaco2o5[phys. Rev. B62, R11 953 (2000)]

Erratum: Neutron scattering and muon-spin spectroscopy studies of the magnetic triangular-lattice compounds ]

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Oxygen vacancies stabilized 180° charged domain walls in ferroelectric hafnium oxide

Oxygen Octahedral Coupling Mediated Ferroelectric-Antiferroelectric Phase Transition Based on Domain Wall Engineering

Topological interfacial states in ferroelectric domain walls of two-dimensional bismuth

Domain Wall Evolution in Hf0.5Zr0.5O2 Ferroelectrics under Field-Cycling Behavior

Erratum: Long-Distance Coherent Propagation of High-Velocity Antiferromagnetic Spin Waves [Phys. Rev. Lett. 130, 096701 (2023)].