Growth and electrical properties of PrSr2Cu3O7−δ thin films

Y.G. Zhao,M. Rajeswari,R.C. Srivastava,Z.W. Dong,R.P. Sharma,T. Venkatesan
DOI: https://doi.org/10.1016/S0921-4534(99)00465-7
1999-01-01
Abstract:We have grown thin films of PrSr2Cu3O7−δ on (001) oriented LaAlO3 by pulsed-laser deposition. X-ray structural analysis shows that the films are single phase and have tetragonal structure with a=b=0.3841(5) nm and c=1.1573(7) nm. A significant insulator–metal transition was observed in the electrical transport measurement of PrSr2Cu3O7−δ thin films with very low resistivity. This work further shows that the pulsed-laser deposition technique can be employed for growing thin films whose phases are far from equilibrium.
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