Electrical Transport Properties of Highly Doped PrBa 2-X Sr X Cu 3 O 7 Thin Films Prepared by Pulsed Laser Deposition

YG Zhao,ZW Dong,M Rajeswari,RP Sharma,T Venkatesan

DOI: https://doi.org/10.1103/physrevb.58.1068

1998-01-01

Abstract:We have prepared single phase ${\mathrm{PrBa}}_{2\ensuremath{-}x}{\mathrm{Sr}}_{x}{\mathrm{Cu}}_{3}{\mathrm{O}}_{7}$ ($x=0,$1.3,1.6) thin films with dopant concentration exceeding the solid solubility limit by using the pulsed laser deposition method. The resistivity of the doped thin films decreases with increasing dopant concentration. For $x=1.3,$ the electrical resistivity ratios $\ensuremath{\rho}(4.2\mathrm{}\mathrm{K})/\mathrm{\ensuremath{\rho}}(300\mathrm{}\mathrm{K})=2.56;$ while for $x=1.6,$ $\ensuremath{\rho}(4.2\mathrm{}\mathrm{K})/\mathrm{\ensuremath{\rho}}(300\mathrm{}\mathrm{K})=1.98,$ comparable to that of the ${\mathrm{Y}}_{0.5}{\mathrm{Pr}}_{0.5}{\mathrm{Ba}}_{2}{\mathrm{Cu}}_{3}{\mathrm{O}}_{7}$ sample, which is very close to the insulator-metal transition. Moreover, the resistivity of the ${\mathrm{PrBa}}_{0.4}{\mathrm{Sr}}_{1.6}{\mathrm{Cu}}_{3}{\mathrm{O}}_{7}$ thin film is very close to the Ioffe-Regel limit, also indicating its proximity to the insulator-metal transition. The decrease of the resistivity with doping for ${\mathrm{PrBa}}_{2\ensuremath{-}x}{\mathrm{Sr}}_{x}{\mathrm{Cu}}_{3}{\mathrm{O}}_{7}$ can be explained by the decrease of the hybridization between Pr $4f$ and O $2p$ states in the ${\mathrm{CuO}}_{2}$ planes due to the Sr doping induced increase of the Pr-O bond length.