Growth And Electrical Properties Of Prsr2cu3o7-Delta Thin Films

Yg Zhao,M Rajeswari,Rc Srivastava,Zw Dong,Rp Sharma,T Venkatesan
DOI: https://doi.org/10.1016/S0921-4534(99)00465-7
1999-01-01
Abstract:We have grown thin films of PrSr2Cu3O7-delta on (001) oriented LaAlO3 by pulsed-laser deposition. X-ray structural analysis shows that the films are single phase and have tetragonal structure with a = b = 0.3841(5) nm and c = 1.1573(7) nm. A significant insulator-metal transition was observed in the electrical transport measurement of PrSr2Cu3O7-delta thin films with very low resistivity. This work further shows that the pulsed-laser deposition technique can be employed for growing thin films whose phases are far from equilibrium. (C) 1999 Elsevier Science B.V. All rights reserved.
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