Abstract:Epitaxial growth of Si/SiGe from hydride precursors has been well established as the preferred technique for preparation of ‘virtual substrate’ and active layers of heterojunction metal-oxide-semiconductor devices as well as other Si/SiGe heterojunction based device structures. This paper reviews briefly the role of hydrogen in the growth mechanisms and establishes the basic reaction pathways in the growth process. The surface related segregation of Ge and As are examined in the context of formation of sharp SiGe/Si heterojunctions and sharp doping profiles. The influence of the growth environment on these surface segregation processes are revealed by the extended rate equation based ‘two-site’ exchange model. The optimisation of growth conditions are clearly identified from the trend gathered from secondary ion mass spectrometry measurements. The strain relaxation process during the growth of virtual substrates often leads to bunching and a high density of threading dislocations and requires substantially thicker grading layers. Some preliminary work shows that incorporation of ‘stresser’ layers in the grading region substantially reduces these detrimental features enabling relatively thin grading layers to be used.

Reactive ion etching of Si1−xGex alloy with hydrogen bromide

Reactive ion etching of Si1-xGex alloy with hydrogen bromide

Reactive Ion Etching of Si1−xGex Alloy with Hydrogen Bromide

Reactive ion etching of SiGe alloys using HBr

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Highly Selective Chemical Etching of Si vs. Si[sub 1−x]Ge[sub x] Using NH[sub 4]OH Solution

A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications

Reactive ion etching of Germanium using SF6/CHF3/He gas mixture

Highly Selective Chemical Etching of Si Vs. Si1 − X Ge X Using NH 4 OH Solution

Inductively coupled plasma-reactive ion etching of InSb using CH[sub 4]∕H[sub 2]∕Ar plasma

Reactive ion etching of Ge-Sb-Se ternary chalcogenide glass films in fluorine plasma

Reduction of Reactive-Ion Etching-Induced Ge Surface Roughness by SF 6 /CF 4 Cyclic Etching for Ge Fin Fabrication

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Inductively Coupled Plasma-Reactive Ion Etching Of Insb Using Ch4/H-2/Ar Plasma

Research on Ar/CHF3 reactive ion beam etching of SO2

Study on the Reactive Ion Etching of Si_3N_4

SiH4 and GeH4 chemical vapor deposition of GeSi/Ge heterostructures

Reactive ion Etching of SiO2 and Mo Sidewall Profile Process

Highly Selective Etching of SiGe to Si for GAAFET

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O2/He Plasmas for Thermopile Devices