Abstract:The reactive-ion-etching (RIE) characteristics of phase change material GeTe in CHF3/O-2 plasma for back end of nonvolatile phase change memory devices were investigated in this paper. The etch rate and surface root-mean-square (RMS) roughness of crystalline GeTe and amorphous GeTe films were studied with various etching parameters, such as gas mixture ratio, chamber gas pressure, and power. It is found that the etch rate first increases with the increasing concentration of O-2 and get at peak value 68.5 nm/min at 12% O-2/(CHF3+O-2), then decreases from 12% to 20% of O-2 fraction. The surface RMS roughness slightly increases with the increasing oxygen content. By changing the gas pressure, the etch rate of GeTe films increases approximately linearly with increasing gas pressure up to 50 mTorr. In addition, the etch rate increases approximately linearly with increasing power below 400 W. The XPS spectra shows that some non-volatile GeFx, GeOx, TeFx, and TeOx by-products were left on the etched film surface. From these results of etched TiN films and GeTe films, the result of RIE with one step recipe shows the formation of under-cut on the profile of etched film. However, the result of RIE with two steps recipe shows better vertical characteristic and few residues were left on the profile of etched film.

Reactive Ion Etching of Si1−xGex Alloy with Hydrogen Bromide

Reactive ion etching of Si1−xGex alloy with hydrogen bromide

Reactive ion etching of Si1-xGex alloy with hydrogen bromide

Reactive ion etching of SiGe alloys using HBr

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Highly Selective Chemical Etching of Si vs. Si[sub 1−x]Ge[sub x] Using NH[sub 4]OH Solution

A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications

Reactive ion etching of Germanium using SF6/CHF3/He gas mixture

Highly Selective Chemical Etching of Si Vs. Si1 − X Ge X Using NH 4 OH Solution

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Reduction of Reactive-Ion Etching-Induced Ge Surface Roughness by SF 6 /CF 4 Cyclic Etching for Ge Fin Fabrication

CHF 3 /O 2 -Based Plasma Reactive Ion Etching of GeTe for Nonvolatile Phase Change Memory

Reactive ion etching of Ge-Sb-Se ternary chalcogenide glass films in fluorine plasma

Inductively coupled plasma-reactive ion etching of InSb using CH[sub 4]∕H[sub 2]∕Ar plasma

Highly Selective Etching of SiGe to Si for GAAFET

Inductively Coupled Plasma-Reactive Ion Etching Of Insb Using Ch4/H-2/Ar Plasma

SiH4 and GeH4 chemical vapor deposition of GeSi/Ge heterostructures

The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O2/He Plasmas for Thermopile Devices

The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids

Investigation on Ge 0.8 Si 0.2 -Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice.

Research on Ar/CHF3 reactive ion beam etching of SO2