Abstract:Due to the excellent physical properties, two dimensional materials have attracted widespread attention from researchers. In this article, we discuss a transition metal dichalcogenide, ReSeS monolayer with 1T" phase, with extremely low symmetry through the first principles calculation. It belongs to the space group P1 and has Jauns structure. Due to the broken of the central inversion symmetry. Raman and infrared active modes in the vibrational spectrum no longer mutually exclusive, which has become a spectral fingerprint of this material. First principles calculation indicates that the bandgap decreases when the material has geometric deformation, and we propose two models to explain this phenomenon and provide the physical pictures. The first model requires constructing a low symmetry Wannier analytically simplify Hamiltonian to obtain 4 energy levels of mixed orbital, Then the changes of bandgap can be qualitatively described through the difference between these energy levels; The second model analyzes the variations of bandgap through the bonding or antibonding characteristics of the valence and conduction band. We point out that it is a "saturation effect", where the energy of the valence and conduction band has difficulties in further changing under the deformation, resulting in the reduction of the bandgap under both compression and tensile deformation. Meanwhile, we discuss a metallic phase of ReSeS, called 1T' phase, to explain the formation of the bandgap. Compared to the 1T" phase, it has higher symmetry. Semi-filled d-orbital bands in 1T' phases will become unstable and split into bonding and antibonding bands, leading to the opening of bandgap. This process is also known as Peierls phase transition. Finally, we calculated the effective mass of electron and the absorption spectrum. Results point out the potential of ReSeS in the preparation of electrical or optical devices.

Anisotropic Phonon Behavior and Phase Transition in Monolayer ReSe2 Discovered by High Pressure Raman Scattering.

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Associated Lattice and Electronic Structural Evolutions in Compressed Multilayer ReS2

Pressure-induced Metallization and Superconducting Phase in ReS2

Pressure-induced Structural and Electronic Transitions, Metallization, and Enhanced Visible-Light Responsiveness in Layered Rhenium Disulphide

Wrinkle and Near-Resonance Effects on the Vibrational and Electronic Properties in Compressed Monolayer MoSe2.

The regulation of symmetry-breaking-dependent electronic structures in ReSeS monolayer

Substrate-affected Lattice Structural Evolution in Compressed Monolayer ReS2.

Interlayer Interactions in Anisotropic Atomically Thin Rhenium Diselenide

Temperature-dependent Raman Spectroscopy Studies of the Interface Coupling Effect of Monolayer ReSe2 Single Crystals on Au Foils

Structural evolution and phase transition mechanism of $$\hbox {MoSe}_2$$ under high pressure

Splitting of interlayer shear modes and photon energy dependent anisotropic Raman response in $N$-layer ReSe$_2$ and ReS$_2$

A New Phase of the Two-Dimensional ReS2 Sheet with Tunable Magnetism

Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets.

Investigating phase transitions from local crystallographic analysis based on statistical learning of atomic environments in 2D MoS 2 -ReS 2

Orientation-polarization dependence of pressure-induced Raman anomalies in anisotropic 2D ReS2

Phase transition and metallization of semiconductor GeSe at high pressure

Identifying the Non-Identical Outermost Selenium Atoms and Invariable Band Gaps Across the Grain Boundary of Anisotropic Rhenium Diselenide

Monolayer behaviour in bulk ReS 2 due to electronic and vibrational decoupling

Structural, Vibrational and Electrical Properties of Type-Ii Dirac Semimetal PtSe2 under High Pressure.

Strain-engineering the Anisotropic Electrical Conductance in ReS2 Monolayer