Structural, Vibrational and Electrical Properties of Type-Ii Dirac Semimetal PtSe2 under High Pressure.

Chao An,Xuliang Chen,Yonghui Zhou,Ying Zhou,Bowen Zhang,Chunhua Chen,Yifang Yuan,Ranran Zhang,Lili Zhang,Xiangde Zhu,Zhaorong Yang
DOI: https://doi.org/10.1088/1361-648x/ab315e
2019-01-01
Journal of Physics Condensed Matter
Abstract:We present a high-pressure study of type-II Dirac semimetal PtSe2 single crystals through synchrotron x-ray diffraction (XRD), electrical transport and Raman scattering measurements in diamond anvil cells with pressures up to 36.1-42.3 GPa, from which two critical pressure points associated with unusual electron-phonon coupling are unraveled. We show that both resistance and phonon linewidth of Raman modes display anomalies at the first critical pressure of P-r similar to 10GPa, in accordance with a scenario of pressure-induced disappearance/appearance of type-II/type-I Dirac points around P-r predicted previously. The second critical pressure P-c similar to 20 GPa may correspond to a structural crossover of PtSe2 from quasi-2D lattice to 3D network, which is revealed via detailed analysis of the structural parameters extracted from XRD refinement, Raman modes shifts as well as parameters from fitting of the low-temperature resistance. Our results demonstrate great tunability of PtSe2 via strain engineering, thanks to the single p-orbital manifold derived electronic states that are susceptible to out-of-plane and in-plane distances.
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