Pressure-Induced Anomalous Enhancement of Insulating State and Isosymmetric Structural Transition in Quasi-One-Dimensional Tis3

Chao An,Pengchao Lu,Xuliang Chen,Yonghui Zhou,Juefei Wu,Ying Zhou,Changyong Park,Chuanchuan Gu,Bowen Zhang,Yifang Yuan,Jian Sun,Zhaorong Yang
DOI: https://doi.org/10.1103/physrevb.96.134110
IF: 3.7
2017-01-01
Physical Review B
Abstract:We present in situ high-pressure synchrotron x-ray diffraction (XRD) and electrical transport measurements on quasi-one-dimensional single-crystal TiS3 up to 29.9-39.0 GPa in diamond-anvil cells, coupled with first-principles calculations. Counterintuitively, the conductive behavior of semiconductor TiS3 becomes increasingly insulating with pressure until P-C1 similar to 12 GPa, where extremes in all three axial ratios are observed. Upon further compression to P-C2 similar to 22 GPa, the XRD data evidence a structural phase transition. Based on our theoretical calculations, this structural transition is determined to be isosymmetric, i.e., without change of the structural symmetry (P2(1)/m), mainly resulting from rearrangement of the dangling S-2 pair along the a axis.
What problem does this paper attempt to address?