Optical properties and electrical characterization of p -type ZnO thin films prepared by thermally oxiding Zn 3 N 2 thin films

B. S. Li,Y. C. Liu,Z. Z. Zhi,D. Z. Shen,Y. M. Lu,J. Y. Zhang,X. W. Fan,R. X. Mu,Don O. Henderson

DOI: https://doi.org/10.1557/JMR.2003.0003

IF: 2.7

2003-01-01

Journal of Materials Research

Abstract:In this paper, we report a simple method for preparing p -type ZnO thin films by thermal oxidization of Zn 3 N 2 thin films. The Zn 3 N 2 films were grown on fused silica substrates by using plasma-enhanced chemical vapor deposition from a Zn(C 2 H 5 ) 2 and NH 3 gas mixture. The Zn 3 N 2 film with a cubic antibixbyite structure transformed to ZnO:N with a hexagonal structure as the annealing temperature reached 500 °C. When the annealing temperature reached 700 °C, a high-quality p -type ZnO film with a carrier density of 4.16 × 10 17 cm −3 was obtained, for which the film showed a strong near-band-edge emission at 3.30 eV without deep-level emission, and the full width at half-maximum of the photoluminescence spectrum was 120 meV at room temperature. The origin of the ultraviolet band was the overlap of free exciton and the bound exciton. The N concentration was as high as 10 21 cm −3 , which could be controlled by adjusting the parameters of the annealing processes.