Photoluminescence of Silicon Nitride-Based ZnO Thin Film Developed with RF Magnetron Sputtering
Chen Jing-han,Yao Wen-qing,Zhu Yong-fa
DOI: https://doi.org/10.3964/j.issn.1000-0593(2017)02-0391-03
2017-01-01
Abstract:Owing to its merits of high corrosion resistance,high temperature stability as well as good mechanical strength etc.,silicon n itride membrane (SiN) has been widely used as the experimental carrier of transm ission electron microscope (TEM),scanning electron microscopy (SEM),atomic for ce microscope (AFM),X-ray photoelectron spectroscopy (XPS),energy dispersive X-Ray spectroscopy (EDX) and other characterization.In particular,SiN can be used as a low disturbing background for SEM observation.However,the poor lumin escent property of SiN thin film has restricted its wide application in fluoresc ent devices.In order to enhance the fluorescence efficiency of silicon nitride membrane,a series of ZnO films were prepared on a SiNx film substrate wit h radio frequency magnetron sputtering (RF magnetron sputtering) technology duri ng the experiment.Samples were then non-situ and in-situ annealed in nitrogen atmosphere,respectively.Then,atomic force microscope (AFM),scanning electro n microscopy (SEM) and Raman spectroscopy (Raman) were applied to study the micr ostructure and photoluminescence (PL) properties of the prepared films.This pap er also systemically studies the luminescence of the prepared thin films.The re sults show that,luminescent intensity increases after sputtering,while anneali ng further promoted the grain growth,a substantial increase in crystallization behavior and a decrease in grain boundary.The microstructure and luminescence p roperties of ZnO/SiN thin films prepared by RF magnetron sputtering were signifi cantly influenced by annealing method.Compared with the SiNx film,near the ban d edge of the intrinsic emission intensity (about 380 nm) of untempered ZnO/SiN x films and N2 atmosphere ex-situ annealed ZnO/SiNx films were in creased by more than 7.7 times and 34.0 times.Compared with non-situ anneale d films,in-situ annealed films contained more oxygen vacancy defects,thus sho wing a stronger visible light PL intensity.In-situ annealed films exhibited a higher photoluminescence capacity during the wavelength from 425to 600 nm of v isible light.These results can help to optimize the preparation parameters of s ilicon nitride based ZnO fluorescent films.