Abstract:Great attention has been given to diamond-like carbon (DLC) or tetrahedral amorphous carbon (ta-C) films due to their potential applications in electronic devices as semiconductor materials. The controlled variation of electrical conductivity through doping is of primary importance. Active phosphorus element could be introduced into ta-C films to achieve n-type doping and the resulted films show potential applications as photovoltaic solar cells, semiconductor field emitters or biomedical coatings. However, an inconsistency of doping effect and graphitization of the bonding still exists in the role of phosphorus atoms in carbon films. A detailed study on the conduction mechanism related to the structural changes should be attempted to further understand the conductive behaviour of the films. Based on this purpose, phosphorus incorporated tetrahedral amorphous carbon (ta-C:P) films were desposited using filtered cathodic vaccum are technology with PH(3) as a dopant source under negative substrate biases of 0-200 V. The structural characteristics of ta-C:P films were investigated by x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, and the electral behaviours of the films were examined by measuring electrical conductivity at the temperature range of 293-573 K and current-voltage curves. Results indicate that phosphorus implantation enhances the contents of sp(2) sites in ta-C films and the numbers of localized electronic pi and pi* states as hopping sites, and improves the conductive ability of the films ta-C:P film obtained at -80 V shows the best conductive propety. The carriers of ta-C:P films represent the hopping conduction in localized band tail states and the thermally activated conduction in extended states in the temperament range of 293-573 K. The results of current-voltage curves indicate that ta-C:P films are n type semiconductor materials.

Effect of Phosphorus Content on Structural Properties of Phosphorus Incorporated Tetrahedral Amorphous Carbon Films

Structural Characteristics and Electrode Activities of Phosphorus Incorporated Tetrahedral Amorphous Carbon Films

Correlation between substrate bias, growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon films

Electrical Properties Of Phosphorus Incorporated Tetrahedral Amorphous Carbon Films

Evolution of Compressive Stress and Electrical Conductivity of Tetrahedral Amorphous Carbon Films with Phosphorus Incorporation

Platelet Adhesion on Phosphorus-Incorporated Tetrahedral Amorphous Carbon Films

Evaluation on corrosion behavior and haemocompatibility of phosphorus incorporated tetrahedral amorphous carbon films

Influence of Ion Energy and Substrate Temperature on the Optical and Electronic Properties of Tetrahedral Amorphous Carbon (Ta-C) Films

The Structure of Boron-, Phosphorus- and Nitrogen-Doped Tetrahedral Amorphous Carbon Deposited by Cathodic Arc

N-Type Doping of Highly Tetrahedral Diamond-Like Amorphous Carbon

S P 3 -Rich Deposition Conditions and Growth Mechanism of Tetrahedral Amorphous Carbon Films Deposited Using Filtered Arc

Tetrahedral Amorphous-Carbon Properties and Applications

Controlling Adhesion and Thermal Stability of Tetrahedral Amorphous Carbon Coatings with Intermediate Sp3c Fraction

Raman Spectra And Mechanical Properties Of Tetrahedral Amorphous Carbon Films Deposited By Filtered Cathodic Vacuum Arc Technology

Strongly Adhering and Thick Highly Tetrahedral Amorphous Carbon (ta–c) Thin Films Via Surface Modification by Implantation

Highly Tetrahedral Amorphous Carbon Films with Low Stress

Electronic Properties of Tetrahedral Amorphous Carbon (Ta-C) Films Containing Nanotube Regions

Cross-Sectional Structure Of Tetrahedral Amorphous Carbon Thin Films

Chemical analysis and vibrational properties of boronated tetrahedral amorphous carbon films

Substitutional Nitrogen Doping of Tetrahedral Amorphous Carbon

Effects of film thickness on mechanical properties of tetrahedral amorphous carbon