Abstract:The main aim of this work is to optimize a Quantum Drift Diffusion model (QDD) (V. Romano, M. Torrisi, and R. Tracinà, "Approximate solutions to the quantum drift-diffusion model of semiconductors," J. Math. Phys. , vol. 48, p. 023501, 2007; A. El Ayyadi and A. Jüngel, "Semiconductor simulations using a coupled quantum drift-diffusion schrödinger-Poisson model," SIAM J. Appl. Math. , vol. 66, no. 2, pp. 554–572, 2005; L. Barletti and C. Cintolesi, "Derivation of isothermal quantum fluid equations with Fermi-Dirac and bose-einstein statistics," J. Stat. Phys. , vol. 148, pp. 353–386, 2012) by comparing it with the Boltzmann-Wigner Transport Equation (BWTE) (O. Muscato, "Wigner ensemble Monte Carlo simulation without splitting error of a GaAs resonant tunneling diode," J. Comput. Electron ., vol. 20, pp. 2062–2069, 2021) solved using a signed Monte Carlo method (M. Nedjalkov, H. Kosina, S. Selberherr, C. Ringhofer, and D. K. Ferry, "Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices," Phys. Rev. B , vol. 70, pp. 115–319, 2004). A situation of high non equilibrium regime is investigated: electron transport in a Resonant Tunneling Diode (RTD) made of GaAs with two potential barriers in GaAlAs. The range of the suitable voltage bias applied to the RTD is analyzed. We find an acceptable agreement between QDD model and BWTE when the applied bias is low or moderate with a threshold of about 0.225 V over a length of 150 nm; it is found out that the use of a field dependent mobility is crucial for getting a good description of the negative differential conductivity in such a range. At higher bias voltages, we expect that QDD model loses accuracy.

Numerical Study of Transient Wigner-Poisson Model for RTDs: Numerical Method and Its Applications.

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Transient Electromagnetic-thermal Co-Simulation Based on DGTD Method

A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

A Finite Element Method with Energy-Adaptive Grids for the Coupled Schrödinger-Poisson-drift-diffusion Model

Numerical simulation of an electro-thermal model for superconducting nanowire single-photon detectors

A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

A Non-Quasi-Static Model for Tunneling FETs Based on the Relaxation Time Approximation

A Device Adaptive Inflow Boundary Condition for Wigner Equations of Quantum Transport

Stationary and Transient Simulations for A One-Dimensional Resonant Tunneling Diode

A WENO-solver combined with adaptive momentum discretization for the Wigner transport equation and its application to resonant tunneling diodes

A Hybrid SBP-SAT/Fourier Pseudo-spectral Method for the Transient Wigner Equation Involving Inflow Boundary Conditions

Optimized quantum drift diffusion model for a resonant tunneling diode

Numerical Approach to Time-Dependent Quantum Transport and Dynamical Kondo Transition.

A Hybrid Explicit-Implicit Scheme for the Time-Dependent Wigner Equation

Running Head : A device adaptive inflow boundary condition for Wigner equations Corresponding

Numerical Simulation of Si/Si1-xGex Resonant Tunneling Diode at Room Temperature

Transient Thermal Analysis of Integrated Systems by Discontinuous Galerkin Time Domain (DGTD) Method

Numerical Simulation of TWT Electron Gun

Time Domain Integral Equation Methods for Analyses of Transient Radiation and Scattering Problems