Abstract:The main aim of this work is to optimize a Quantum Drift Diffusion model (QDD) (V. Romano, M. Torrisi, and R. Tracinà, "Approximate solutions to the quantum drift-diffusion model of semiconductors," J. Math. Phys. , vol. 48, p. 023501, 2007; A. El Ayyadi and A. Jüngel, "Semiconductor simulations using a coupled quantum drift-diffusion schrödinger-Poisson model," SIAM J. Appl. Math. , vol. 66, no. 2, pp. 554–572, 2005; L. Barletti and C. Cintolesi, "Derivation of isothermal quantum fluid equations with Fermi-Dirac and bose-einstein statistics," J. Stat. Phys. , vol. 148, pp. 353–386, 2012) by comparing it with the Boltzmann-Wigner Transport Equation (BWTE) (O. Muscato, "Wigner ensemble Monte Carlo simulation without splitting error of a GaAs resonant tunneling diode," J. Comput. Electron ., vol. 20, pp. 2062–2069, 2021) solved using a signed Monte Carlo method (M. Nedjalkov, H. Kosina, S. Selberherr, C. Ringhofer, and D. K. Ferry, "Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices," Phys. Rev. B , vol. 70, pp. 115–319, 2004). A situation of high non equilibrium regime is investigated: electron transport in a Resonant Tunneling Diode (RTD) made of GaAs with two potential barriers in GaAlAs. The range of the suitable voltage bias applied to the RTD is analyzed. We find an acceptable agreement between QDD model and BWTE when the applied bias is low or moderate with a threshold of about 0.225 V over a length of 150 nm; it is found out that the use of a field dependent mobility is crucial for getting a good description of the negative differential conductivity in such a range. At higher bias voltages, we expect that QDD model loses accuracy.

Stationary and Transient Simulations for A One-Dimensional Resonant Tunneling Diode

Transient and Stationary Simulations for A Quantum Hydrodynamic Model

Carrier Transport Simulation Methods for Electronic Devices with Coexistence of Quantum Transport and Diffusive Transport

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Self-excited current oscillations in a resonant tunneling diode described by a model based on the Caldeira-Leggett Hamiltonian

Open System Approach to Non-Equilibrium Dynamical Theory of Quantum Dot Systems

A finite element method for the quantum hydrodynamic model for semiconductor devices

Simulations of Electron Transport Through Three-Dimensional Quantum Structures

Time-dependent Quantum Monte Carlo Simulation of Electron Devices with Two-Dimensional Dirac Materials: A Genuine Terahertz Signature for Graphene

Study on the current bistability and hysteresis in resonant-tunneling structures

Quantum Time-Dependent Monte Carlo Simulation of Electron Devices with 2D Linear-Band Materials: a Genuine TeraHertz Signature for Graphene

Semiconductor full quantum hydrodynamic model with non-flat doping profile: (i) stability of steady state

Tuning Bistability And Current Hysteresis In Resonant-Tunneling Structures

Structural stability of subsonic steady states to the hydrodynamic model for semiconductors with sonic boundary

Numerical approximation of the viscous quantum hydrodynamic model for semiconductors

Optimized quantum drift diffusion model for a resonant tunneling diode

Simulating Semiconductor Charge Transport

Structural stability of interior subsonic steady-states to hydrodynamic model for semiconductors with sonic boundary

TRANSONIC STEADY-STATES OF EULER-POISSON EQUATIONS FOR SEMICONDUCTOR MODELS WITH SONIC BOUNDARY

Semiconductor Full Quantum Hydrodynamic Model with Non-Flat Doping Profile: (II) Semi-Classical Limit

Stability and semi-classical limit in a semiconductor full quantum hydrodynamic model with non-flat doping profile