Abstract:Bistability in the current–voltage characteristics of semiconductor superlattices and quantum cascade laser structures has the potential for wide-ranging applications, particularly in sensing systems. However, the interdependency of applied bias and current injection in conventional two-terminal structures has led to complications in analysis and rendered the bistability phenomenon difficult to implement in practical applications. Here, we report a new kind of electronic bistability coupled to optical switching in a resonant tunneling bipolar superlattice transistor. This bistability manifests as sharp discontinuities in the collector current with extremely small variations of the applied voltage, which arise from unstable tunneling transmission across the hetero-barrier between the two-dimensional electron gas (2DEG) at the edge of the transistor base and the collector superlattice structure. The electronic transitions between high and low quantum mechanical transmissions are demonstrated to be caused by self-consistent variations of the internal electric field at the heterointerface between the 2DEG and the superlattice. They are also present in the base current of the three-terminal device and result in sharp switching of near-infrared spontaneous light emission output from an interband radiative recombination process with a peak emission wavelength of 1.58 μm. A comprehensive quantum mechanical theoretical model accounting for the self-consistent bistable tunneling transmission is in quantitative agreement with the experimental data. The measured peak transconductance sensitivity value of 6000 mS can be used in the highly sensitive detector and non-linear device applications.

Study on the current bistability and hysteresis in resonant-tunneling structures

Tuning Bistability And Current Hysteresis In Resonant-Tunneling Structures

Self-excited current oscillations in a resonant tunneling diode described by a model based on the Caldeira-Leggett Hamiltonian

Tunnel Current on a Quantum Wedge

Branch Current Behavior at Two Level Anti-crossings in Vertical Quantum Dot Single-particle Spectra

Stationary and Transient Simulations for A One-Dimensional Resonant Tunneling Diode

Time-dependent resonant tunneling transport: Keldysh and Kadanoff-Baym nonequilibrium Green's functions in an analytically soluble problem

Landauer-Büttiker Formula for Time-Dependent Transport Through Resonant-Tunneling Structures : A Nonequilibrium Green ’ S Function Approach

Self-consistent Treatment of Three-Dimensional-two-dimensional and Two-Dimensional-two-dimensional Resonant Tunneling in Double-Barrier Structures.

Effect of Bias Step on the I-V Curve in Double-Barrier Algaas/Gaas/Algaas Resonant-Tunnelling Devices

Ultra-sensitive current bistability and light switching in a resonant tunneling superlattice transistor

Lingering Times at Resonance: The Case of Sb-based Tunneling Devices

Tunneling Resonances and Andreev Reflection Through an Interaction Quantum Dot Coupled with Two Half Metals and A Superconductor

Stability of long-sustained oscillations induced by electron tunneling

Incoherent dynamics of vibrating single-molecule transistors

Current fluctuations in a single tunnel junction

Study on Hysteresis in Josephson Tunnel Junction - Calculating the Minimum Current on Phase Plane

Resonant Tunneling and Charging Effects, a Path Integral Approach

Resonant Tunneling In Step-Barrier Structures Under An Applied Electric Field

Admittance of A One-Dimensional Double-Barrier Resonant Tunneling Nanostructure

Transient Current Through A Quantum Dot with Two Time-Dependent Barriers