TRANSONIC STEADY-STATES OF EULER-POISSON EQUATIONS FOR SEMICONDUCTOR MODELS WITH SONIC BOUNDARY

Liang Chen,Ming Mei,Guojing Zhang,Kaijun Zhang
DOI: https://doi.org/10.1137/21m1416369
IF: 2.071
2022-01-01
SIAM Journal on Mathematical Analysis
Abstract:In this paper, we mainly focus on radial transonic solutions for the steady hydrodynamic model of semiconductors represented by Euler-Poisson equations with sonic boundary in n dimensions. In an annulus domain, given constant electronic current j(0) at the inner boundary and the sonic data of boundary electronic density (rho(0), rho(1)), we present that the Euler-Poisson system possesses infinitely many transonic shock solutions when the relaxation time is large and infinitely many C-1-smooth transonic solutions when the relaxation time is small and the doping profile is continuous. To study the structure of shock-transonic steady-states, the approach is the constructive method based on the entropy condition and Rankine-Hugoniot jump condition. To show the existence of C-1-smooth solutions, the adopted approach is the local continuation method, and the derivation on C-1-regularity of transonic steady-states is based on a new defined iterative approximation combining the singularity analysis on the critical point. The difficulties caused by the high dimensions for the system and the nonconstant doping both are essential. In short, the concept of local analysis throughout the entire proof is the basis and the core for solving this nonautonomous system.
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