Stability of the Stationary Solution of the Cauchy Problem to A Semiconductor Full Hydrodynamic Model with Recombination-Generation Rate

Haifeng Hu,Kaijun Zhang
DOI: https://doi.org/10.3934/krm.2015.8.117
2015-01-01
Abstract:We study the Cauchy problem of a 1-D full hydrodynamic model for semiconductors where the energy equations are included. In the case of recombination-generation effects between electrons and holes being taken into consideration, the existence and uniqueness of a subsonic stationary solution of the related system are established. The convergence of the global smooth solution to the stationary solution exponentially is proved as time tends to infinity.
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