The Well-Posedness of Bipolar Semiconductor Hydrodynamic Model with Recombination-Generation Rate on the Bounded Interval

Wu Xiaochun,Zhang Yongqian
DOI: https://doi.org/10.1080/00036811.2018.1520983
2018-01-01
Applicable Analysis
Abstract:We study the initial boundary value problem of bipolar semiconductor hydrodynamic model with recombination-generation rate for the non-constant doping profile. The new feature is that the current distribution for electrons and holes is not constant. In order to overcome this difficulty, the existence and uniqueness of a subsonic stationary solution are first established by elliptic theorem. Then, for such an Euler-Poisson system, we prove, by means of a technical energy method, that the subsonic solutions are unique, exist globally and asymptotically converge to the corresponding stationary solutions. An exponential decay rate is also derived.
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