Abstract:SIAM Journal on Mathematical Analysis, Volume 56, Issue 3, Page 3452-3477, June 2024. This paper concerns the relaxation time limits for the one-dimensional steady hydrodynamic model of semiconductors in the form of Euler–Poisson equations with sonic or nonsonic boundary. The sonic boundary is the critical and difficult case because of the degeneracy at the boundary and the formation of the boundary layers. In order to avoid the degeneracy of the second order derivatives, we technically introduce an invertible transform to the working equation. This guarantees that the remaining one order degeneracy becomes a good term since the transform used here is strictly increasing. Then we efficiently overcome the degenerate effect. When the relaxation time [math], we first show the strong convergence of the approximate solutions to their asymptotic profiles in [math] norm with the order [math]. When [math], the boundary layer appears because the boundary data are not equal to each other, and we further derive the uniform error estimates of the approximate solutions to their background profiles in [math] norm with the order [math] or [math] according to the different cases of boundary data. Unlike the methods adopted in the previous studies, we propose some altogether new techniques of the asymptotic limit analysis to successfully describe the width of the boundary layer, which is almost the order [math] provided [math]. These original approaches develop and improve the existing studies. Finally, some numerical simulations are carried out, which confirm our theoretical study, in particular, the appearance of boundary layers.

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On the Initial-Boundary Value Problem for the Bipolar Hydrodynamic Model for Semiconductors

The Relaxation of the Hydrodynamic Model for Semiconductors to the Drift–Diffusion Equations

ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES

Semiclassical and Relaxation Limits of Bipolar Quantum Hydrodynamic Model for Semiconductors

Global Existence and Asymptotic Limits of Weak Solutions of the Bipolar Hydrodynamic Model for Semiconductors

Analysis on the Initial-Boundary Value Problem of a Full Bipolar Hydrodynamic Model for Semiconductors

Relaxation Limit in Bipolar Semiconductor Hydrodynamic Model with Non-Constant Doping Profile

Steady-State Solutions and Asymptotic Limits on the Multi-Dimensional Semiconductor Quantum Hydrodynamic Model

GLOBAL EXPONENTIAL STABILITY OF CLASSICAL SOLUTIONS TO THE HYDRODYNAMIC MODEL FOR SEMICONDUCTORS

Relaxation-time limit of the multidimensional bipolar hydrodynamic model in Besov space

Zero-Relaxation Limit of Non-Isentropic Hydrodynamic Models for Semiconductors

Asymptotic Stability and Semi-Classical Limit for Bipolar Quantum Hydrodynamic Model

Relaxation Time Limits of Subsonic Steady States for Multidimensional Hydrodynamic Model of Semiconductors

A Relaxation Scheme for the Hydrodynamic Equations for Semiconductors

Subsonic steady-states for bipolar hydrodynamic model for semiconductors

Large Time Behaviors of Solutions to the Unipolar Hydrodynamic Model of Semiconductors with Physical Boundary Effect

The Well-Posedness of Bipolar Semiconductor Hydrodynamic Model with Recombination-Generation Rate on the Bounded Interval

Stability and semi-classical limit in a semiconductor full quantum hydrodynamic model with non-flat doping profile

Large time behavior of entropy solutions to one-dimensional unipolar hydrodynamic model for semiconductor devices

Relaxation Time Limits of Subsonic Steady States for Hydrodynamic Model of Semiconductors with Sonic or Nonsonic Boundary