ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES

YC Qiu,KJ Zhang
DOI: https://doi.org/10.1142/s0218202502001684
2002-01-01
Abstract:The initial-boundary value problem of a simplified one-dimensional hydrodynamic model for semiconductors is considered. The global weak solution and its relaxation limit are obtained through using the compensated compactness methods. The traces of weak solutions are also discussed.
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