Abstract:The hydrodynamic model for semiconductors with sonic boundary, represented by Euler–Poisson equations, possesses the various physical steady states including interior-subsonic/interior-supersonic/shock-transonic/C 1 -smooth-transonic steady states. Since these physical steady states result in some serious singularities at the sonic boundary (their gradients are infinity), this makes that the structural stability for these physical solutions is more difficult and challenging, and has remained open as we know. In this paper, we investigate the structural stability of interior subsonic steady states. Namely, when the doping profiles are as small perturbations, the differences between the corresponding subsonic solutions are also small. To overcome the singularities at the sonic boundary, we propose a novel approach, which combines the weighted multiplier technique, local singularity analysis, monotonicity argument and squeezing skill. Both the result itself and the technique developed here will give us some truly enlightening insights into our follow-up study on the structural stability of the remaining types of solutions. A number of numerical approximations are also carried out, which intuitively confirm our theoretical results.

Stability and semi-classical limit in a semiconductor full quantum hydrodynamic model with non-flat doping profile

Semiconductor Full Quantum Hydrodynamic Model with Non-Flat Doping Profile: (II) Semi-Classical Limit

Semiconductor full quantum hydrodynamic model with non-flat doping profile: (i) stability of steady state

Steady-State Solutions and Asymptotic Limits on the Multi-Dimensional Semiconductor Quantum Hydrodynamic Model

Asymptotic Stability and Semi-Classical Limit for Bipolar Quantum Hydrodynamic Model

Quasi-Neutral Limit to Steady-State Hydrodynamic Model of Semiconductors with Degenerate Boundary.

Semiclassical and Relaxation Limits of Bipolar Quantum Hydrodynamic Model for Semiconductors

3D Full Hydrodynamic Model for Semiconductor Optoelectronic Devices: Stability of Thermal Equilibrium States

Relaxation Limit in Bipolar Semiconductor Hydrodynamic Model with Non-Constant Doping Profile

Stability of the Stationary Solution of the Cauchy Problem to A Semiconductor Full Hydrodynamic Model with Recombination-Generation Rate

Steady Hydrodynamic Model of Semiconductors with Sonic Boundary and Transonic Doping Profile

GLOBAL EXPONENTIAL STABILITY OF CLASSICAL SOLUTIONS TO THE HYDRODYNAMIC MODEL FOR SEMICONDUCTORS

Open System Approach to Non-Equilibrium Dynamical Theory of Quantum Dot Systems

Analysis on the Initial-Boundary Value Problem of a Full Bipolar Hydrodynamic Model for Semiconductors

Structural stability of interior subsonic steady-states to hydrodynamic model for semiconductors with sonic boundary

A finite element method for the quantum hydrodynamic model for semiconductor devices

Transient and Stationary Simulations for A Quantum Hydrodynamic Model

ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES

Structural stability of subsonic steady states to the hydrodynamic model for semiconductors with sonic boundary

The Relaxation of the Hydrodynamic Model for Semiconductors to the Drift–Diffusion Equations

Semiclassical limit of a simplified quantum energy-transport model for bipolar semiconductors